Metallization and Its Use In, In Particular, an IGBT or a Diode

Abstract

A vertical power semiconductor component includes a semiconductor chip and at least one layer serving as a heat sink. The semiconductor chip has a top main surface at a front side of the semiconductor chip, wherein the top main surface is in a heat exchanging relationship with the at least one layer serving as the heat sink. This layer has a layer thickness of at least 15 μm and has a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip. The component further includes metallizations between the at least one layer and the top main surface.

1 . A vertical power semiconductor component comprising:
 a semiconductor chip having a top main surface at a front side of the semiconductor chip, wherein the top main surface is in a heat exchanging relationship with at least one layer serving as a heat sink, said at least one layer having a layer thickness of at least 15 μm and having a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip, and further comprising metallizations between the at least one layer and the top main surface.   
     
     
         2 . The vertical power semiconductor component of  claim 1 , wherein the at least one layer serving as the heat sink is electrically coupled to the semiconductor chip. 
     
     
         3 . The vertical power semiconductor component of  claim 2 , wherein the at least one layer serving as the heat sink forms an electrical contact for the vertical power semiconductor component. 
     
     
         4 . The vertical power semiconductor component of  claim 2 , wherein the at least one layer serving as the heat sink either directly contacts the top main surface or indirectly contacts the top main surface via a diffusion barrier layer. 
     
     
         5 . The vertical power semiconductor component of  claim 4 , wherein the diffusion barrier layer is formed from at least one of the group consisting of Ti, TiN, Ta, TaN and Al. 
     
     
         6 . The vertical power semiconductor component of  claim 5 , wherein the diffusion barrier layer is formed by a first sublayer composed of Ti/TiN or Ta/TaN, and a second sublayer composed of Al. 
     
     
         7 . The vertical power semiconductor component of claim.  claim 1 , wherein at least one layer serving as the heat sink is formed from at least one of the group consisting of copper, aluminum, silver and gold. 
     
     
         8 . The vertical power semiconductor component of  claim 1 , wherein at least one layer serving as the heat sink has a layer thickness of 20 to 60 μm. 
     
     
         9 . A vertical power semiconductor component comprising:
 a semiconductor chip having a bottom main surface at a rear side of the semiconductor chip, wherein the bottom main surface is in a heat exchanging relationship with at least one layer serving as a heat sink, said at least one layer having a layer thickness of at least 15 μm and having a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip.   
     
     
         10 . The vertical power semiconductor component of  claim 9 , wherein the at least one layer serving as the heat sink forms is electrically coupled to the semiconductor chip. 
     
     
         11 . The vertical power semiconductor component of  claim 10 , wherein the at least one layer serving as the heat sink forms an electrical contact for the vertical power semiconductor component. 
     
     
         12 . The vertical power semiconductor component of  claim 10 , wherein the at least one layer serving as the heat sink either directly contacts the bottom main surface or indirectly contacts the bottom main surface via a diffusion barrier layer. 
     
     
         13 . The vertical power semiconductor component of  claim 12 , wherein the diffusion barrier layer is formed from at least one of the group consisting of Ti, TiN, Ta, TaN and Al. 
     
     
         14 . The vertical power semiconductor component of  claim 13 , wherein the diffusion barrier layer is formed by a first sublayer composed of Ti/TiN or Ta/TaN, and a second sublayer composed of Al. 
     
     
         15 . The vertical power semiconductor component of  claim 9 , wherein at least one layer serving as the heat sink is formed from at least one of the group consisting of copper, aluminum, silver and gold. 
     
     
         16 . The vertical power semiconductor component of  claim 9 , wherein at least one layer serving as the heat sink has a layer thickness of 20 to 60 μm. 
     
     
         17 . A power semiconductor component, comprising:
 a chip;   a substrate ceramic including a copper layer; and wherein the copper layer of the substrate ceramic is connected to the semiconductor chip via a low-temperature connecting technique (LTC) layer.   
     
     
         18 . The power semiconductor component of  claim 17 , wherein the chip includes metallizations.