Inventor · disambiguated record
Franz Kreupl
Also filed as: KLOSE LEGAL REPRESENTATIVE HYA · KREUPL FRANZ
55 granted patents·21 pending applications·1,134 citations·filing 2001–2013
99Inventor score
Top patents by PatentIndex Score
76 records- 0199US6707098B2Electronic device and method for fabricating an electronic deviceINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 16, 2004·295 cites·18 claims
- 0298US8237146B2Memory cell with silicon-containing carbon switching layer and methods for forming the sameKREUPL FRANZ·Filed 2010·Granted Aug 7, 2012·91 cites·55 claims
- 0398US6798000B2Field effect transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 28, 2004·251 cites·24 claims
- 0495US7420199B2Resistivity changing memory cell having nanowire electrodeINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 2, 2008·40 cites·18 claims
- 0594US8354660B2Bottom electrodes for use with metal oxide resistivity switching layersSANDISK 3D LLC·Filed 2011·Granted Jan 15, 2013·14 cites·35 claims
- 0693US8395926B2Memory cell with resistance-switching layers and lateral arrangementKREUPL FRANZ·Filed 2011·Granted Mar 12, 2013·13 cites·22 claims
- 0793US7768016B2Carbon diode array for resistivity changing memoriesQIMONDA AG·Filed 2008·Granted Aug 3, 2010·29 cites·23 claims
- 0892US7894253B2Carbon filament memory and fabrication methodQIMONDA AG·Filed 2007·Granted Feb 22, 2011·24 cites·44 claims
- 0990US8216862B2Forming and training processes for resistance-change memory cellKREUPL FRANZ·Filed 2010·Granted Jul 10, 2012·9 cites·20 claims
- 1090US7728405B2Carbon memoryQIMONDA AG·Filed 2007·Granted Jun 1, 2010·19 cites·47 claims
- 1188US8395927B2Memory cell with resistance-switching layers including breakdown layerKREUPL FRANZ·Filed 2011·Granted Mar 12, 2013·10 cites·20 claims
- 1287US9034689B2Non-volatile storage with metal oxide switching element and methods for fabricating the sameSANDISK 3D LLC·Filed 2013·Granted May 19, 2015·7 cites·13 claims
- 1386US8520424B2Composition of memory cell with resistance-switching layersKREUPL FRANZ·Filed 2011·Granted Aug 27, 2013·7 cites·26 claims
- 1485US8737111B2Memory cell with resistance-switching layersKREUPL FRANZ·Filed 2011·Granted May 27, 2014·7 cites·20 claims
- 1585US7646045B2Method for fabricating a nanoelement field effect transistor with surrounded gate structureQIMONDA AG·Filed 2008·Granted Jan 12, 2010·20 cites·19 claims
- 1685US6809361B2Magnetic memory unit and magnetic memory arrayINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 26, 2004·38 cites·12 claims
- 1784US8420526B2Vertical interconnect structure, memory device and associated production methodGUTSCHE MARTIN·Filed 2011·Granted Apr 16, 2013·6 cites·13 claims
- 1883US7425487B2Method for fabricating a nanoelement field effect transistor with surrounded gate structureQIMONDA AG·Filed 2006·Granted Sep 16, 2008·19 cites·22 claims
- 1979US8772749B2Bottom electrodes for use with metal oxide resistivity switching layersSEKAR DEEPAK CHANDRA·Filed 2011·Granted Jul 8, 2014·4 cites·25 claims
- 2079US8435831B2Non-volatile storage with metal oxide switching element and methods for fabricating the sameSEKAR DEEPAK C·Filed 2010·Granted May 7, 2013·4 cites·11 claims
- 2179US8063394B2Integrated circuitANDRES DIETER·Filed 2008·Granted Nov 22, 2011·12 cites·9 claims
- 2278US8487292B2Resistance-switching memory cell with heavily doped metal oxide layerSEKAR DEEPAK C·Filed 2010·Granted Jul 16, 2013·4 cites·20 claims
- 2377US7902616B2Integrated circuit having a magnetic tunnel junction device and methodQIMONDA AG·Filed 2008·Granted Mar 8, 2011·7 cites·22 claims
- 2477US7301779B2Electronic chip and electronic chip assemblyINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 27, 2007·26 cites·9 claims
- 2575US8503229B2P-/Metal floating gate non-volatile storage elementLEE SANGHYUN·Filed 2011·Granted Aug 6, 2013·4 cites·18 claims
- 2675US8471360B2Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the sameKREUPL FRANZ·Filed 2010·Granted Jun 25, 2013·4 cites·18 claims
- 2775US8097872B2Modifiable gate stack memory elementKREUPL FRANZ·Filed 2007·Granted Jan 17, 2012·5 cites·20 claims
- 2874US8912654B2Semiconductor chip with integrated viaKREUPL FRANZ·Filed 2008·Granted Dec 16, 2014·4 cites·32 claims
- 2973US7915603B2Modifiable gate stack memory elementQIMONDA AG·Filed 2006·Granted Mar 29, 2011·4 cites·6 claims
- 3073US7863700B2Magnetoresistive sensor with tunnel barrier and methodQIMONDA AG·Filed 2008·Granted Jan 4, 2011·5 cites·22 claims
- 3173US7321097B2Electronic component comprising an electrically conductive connection consisting of carbon nanotubes and a method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 22, 2008·16 cites·10 claims
- 3273US7265376B2Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cellINFINEON TECHNOLOGIES INC·Filed 2003·Granted Sep 4, 2007·19 cites·26 claims
- 3373US6809379B2Field effect transistor and method for producing a field effect transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 26, 2004·15 cites·11 claims
- 3472US8319259B2Semiconductor power switch having nanowiresKREUPL FRANZ·Filed 2005·Granted Nov 27, 2012·5 cites·17 claims
- 3572US7910210B2Method of producing a layer arrangement, method of producing an electrical component, layer arrangement, and electrical componentRISING SILICON INC·Filed 2006·Granted Mar 22, 2011·5 cites·22 claims
- 3671US8624293B2Carbon/tunneling-barrier/carbon diodeBANDYOPADHYAY ABHIJIT·Filed 2009·Granted Jan 7, 2014·4 cites·23 claims
- 3770US8987046B2Trap passivation in memory cell with metal oxide switching elementSANDISK 3D LLC·Filed 2013·Granted Mar 24, 2015·2 cites·20 claims
- 3869US6777731B2Magnetoresistive memory cell with polarity-dependent resistanceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 17, 2004·16 cites·22 claims
- 3965US7709827B2Vertically integrated field-effect transistor having a nanostructure thereinQIMONDA AG·Filed 2003·Granted May 4, 2010·12 cites·20 claims
- 4065US7635867B2Nanotube array and method for producing a nanotube arrayINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 22, 2009·5 cites·14 claims
- 4163US6930052B2Method for producing an integrated circuit having at least one metalicized surfaceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 16, 2005·7 cites·10 claims
- 4262US7326465B2Integrated electronic componentINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 5, 2008·2 cites·6 claims
- 4360US7413971B2Method of producing a layered arrangement and layered arrangementSTEINHOEGL WERNER·Filed 2002·Granted Aug 19, 2008·13 cites·21 claims
- 4460US7081383B2Method for fabricating memory cells and memory cell arrayINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 25, 2006·8 cites·19 claims
- 4559US7998858B2Vertical interconnect structure, memory device and associated production methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 16, 2011·1 cites·7 claims
- 4657US8084759B2Integrated circuit including doped semiconductor line having conductive claddingKLOSTERMANN ULRICH·Filed 2007·Granted Dec 27, 2011·2 cites·25 claims
- 4756US7339186B2IC chip with nanowiresINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 4, 2008·8 cites·9 claims
- 4853US8664657B2Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructureDUESBERG GEORG·Filed 2005·Granted Mar 4, 2014·2 cites·22 claims
- 4953US2013126821A1Bottom electrodes for use with metal oxide resistivity switching layersSANDISK 3D LLC·Filed 2013·Application pending·0 cites
- 5052US9177995B2Vertical interconnect structure, memory device and associated production methodGUTSCHE MARTIN·Filed 2012·Granted Nov 3, 2015·0 cites·12 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →