Assignee
KREUPL FRANZ
DE·11 granted patents·6 pending applications·155 citations·filing 2005–2011
Top patents by PatentIndex Score
17 records- 0198US8237146B2Memory cell with silicon-containing carbon switching layer and methods for forming the sameKREUPL FRANZ·Filed 2010·Granted Aug 7, 2012·91 cites·55 claims
- 0293US8395926B2Memory cell with resistance-switching layers and lateral arrangementKREUPL FRANZ·Filed 2011·Granted Mar 12, 2013·13 cites·22 claims
- 0390US8216862B2Forming and training processes for resistance-change memory cellKREUPL FRANZ·Filed 2010·Granted Jul 10, 2012·9 cites·20 claims
- 0488US8395927B2Memory cell with resistance-switching layers including breakdown layerKREUPL FRANZ·Filed 2011·Granted Mar 12, 2013·10 cites·20 claims
- 0586US8520424B2Composition of memory cell with resistance-switching layersKREUPL FRANZ·Filed 2011·Granted Aug 27, 2013·7 cites·26 claims
- 0685US8737111B2Memory cell with resistance-switching layersKREUPL FRANZ·Filed 2011·Granted May 27, 2014·7 cites·20 claims
- 0775US8471360B2Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the sameKREUPL FRANZ·Filed 2010·Granted Jun 25, 2013·4 cites·18 claims
- 0875US8097872B2Modifiable gate stack memory elementKREUPL FRANZ·Filed 2007·Granted Jan 17, 2012·5 cites·20 claims
- 0974US8912654B2Semiconductor chip with integrated viaKREUPL FRANZ·Filed 2008·Granted Dec 16, 2014·4 cites·32 claims
- 1072US8319259B2Semiconductor power switch having nanowiresKREUPL FRANZ·Filed 2005·Granted Nov 27, 2012·5 cites·17 claims
- 1149US8686419B2Structure and fabrication method for resistance-change memory cell in 3-D memoryKREUPL FRANZ·Filed 2011·Granted Apr 1, 2014·0 cites·19 claims
- 1246US2009212438A1Integrated circuit device comprising conductive vias and method of making the sameKREUPL FRANZ·Filed 2008·Application pending·0 cites
- 1344US2009026524A1Stacked CircuitsKREUPL FRANZ·Filed 2007·Application pending·0 cites
- 1440US2007176255A1Integrated circuit arrangementKREUPL FRANZ·Filed 2006·Application pending·0 cites
- 1539US2008102278A1Carbon filament memory and method for fabricationKREUPL FRANZ·Filed 2006·Application pending·0 cites
- 1637US2007010094A1Method for depositing a conductive carbon material on a semiconductor for forming a Schottky contact and semiconductor contact deviceKREUPL FRANZ·Filed 2006·Application pending·0 cites
- 1736US2007187744A1Integrated circuits, memory device, method of producing an integrated circuit, method of producing a memory device, memory moduleKREUPL FRANZ·Filed 2007·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →