Inventor · disambiguated record
Vassil Antonov
Also filed as: ANTONOV VASSIL · ANTONOV VASSIL N
36 granted patents·5 pending applications·61 citations·filing 2008–2024
96Inventor score
Top patents by PatentIndex Score
41 records- 0192US8564095B2Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating sameHUANG TSAI-YU·Filed 2011·Granted Oct 22, 2013·10 cites·17 claims
- 0291US11264395B1Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 1, 2022·2 cites·24 claims
- 0386US11289487B2Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 29, 2022·3 cites·26 claims
- 0484US8940388B2Insulative elementsANTONOV VASSIL·Filed 2011·Granted Jan 27, 2015·6 cites·20 claims
- 0584US8518486B2Methods of forming and utilizing rutile-type titanium oxideMIRIN NIK·Filed 2010·Granted Aug 27, 2013·8 cites·12 claims
- 0683US10553673B2Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitorMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 4, 2020·3 cites·31 claims
- 0782US8748283B2Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide materialMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 10, 2014·3 cites·21 claims
- 0880US8528175B2Methods of forming capacitorsANTONOV VASSIL·Filed 2011·Granted Sep 10, 2013·3 cites·10 claims
- 0980US2025089318A1Transistor and Methods of Forming TransistorsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1079US12432928B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 30, 2025·0 cites·22 claims
- 1176US9466660B2Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structuresMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 11, 2016·5 cites·15 claims
- 1275US12507395B2Doped titanium nitride materials for dram capacitors, and related semiconductor devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 23, 2025·0 cites·17 claims
- 1375US12191354B2Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetweenMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·0 cites·7 claims
- 1474US11871582B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·0 cites·14 claims
- 1573US7939442B2Strontium ruthenium oxide interfaceMICRON TECHNOLOGY INC·Filed 2009·Granted May 10, 2011·3 cites·17 claims
- 1672US8609553B2Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structuresHUANG TSAI-YU·Filed 2011·Granted Dec 17, 2013·2 cites·8 claims
- 1770US11825662B2Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 21, 2023·0 cites·36 claims
- 1868US11417730B2Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regionsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 16, 2022·0 cites·6 claims
- 1967US8927441B2Methods of forming rutile titanium dioxideMICRON TECHNOLOGY INC·Filed 2013·Granted Jan 6, 2015·1 cites·20 claims
- 2066US9236427B2Multi-material structures and capacitor-containing semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2014·Granted Jan 12, 2016·3 cites·15 claims
- 2166US9209013B2Constructions comprising thermally conductive stacks containing rutile-type titanium oxideMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 8, 2015·1 cites·4 claims
- 2266US8124528B2Method for forming a ruthenium filmBHAT VISHWANATH·Filed 2008·Granted Feb 28, 2012·2 cites·37 claims
- 2365US8513807B2Semiconductor devices including a ruthenium filmBHAT VISHWANATH·Filed 2012·Granted Aug 20, 2013·1 cites·25 claims
- 2465US8399952B2Integrated circuit devices having a strontium ruthenium oxide interfaceSRINIVASAN BHASKAR·Filed 2011·Granted Mar 19, 2013·1 cites·20 claims
- 2563US9159551B2Methods of forming capacitorsANTONOV VASSIL·Filed 2009·Granted Oct 13, 2015·1 cites·24 claims
- 2663US8208241B2Crystallographically orientated tantalum pentoxide and methods of making sameBHAT VISHWANATH·Filed 2008·Granted Jun 26, 2012·1 cites·20 claims
- 2761US9159731B2Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide materialMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 13, 2015·0 cites·20 claims
- 2859US11101274B2Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 24, 2021·0 cites·16 claims
- 2959US8936991B2Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide materialMICRON TECHNOLOGY INC·Filed 2014·Granted Jan 20, 2015·0 cites·19 claims
- 3059US8865544B2Methods of forming capacitorsGREELEY JOSEPH NEIL·Filed 2012·Granted Oct 21, 2014·1 cites·11 claims
- 3157US8107218B2CapacitorsANTONOV VASSIL·Filed 2009·Granted Jan 31, 2012·1 cites·8 claims
- 3255US8900992B2Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systemsMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 2, 2014·0 cites·19 claims
- 3354US10008381B2Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxideMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 26, 2018·0 cites·11 claims
- 3453US9887083B2Methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2015·Granted Feb 6, 2018·0 cites·2 claims
- 3551US2014349461A1Method for using metal bilayerNANYA TECHNOLOGY CORP·Filed 2014·Application pending·0 cites
- 3647US10923593B1Transistor and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 16, 2021·0 cites·31 claims
- 3747US8841747B2Capacitor structure with metal bilayer and method for using the sameANTONOV VASSIL·Filed 2011·Granted Sep 23, 2014·0 cites·10 claims
- 3845US8659869B2Method for forming rutile titanium oxide and the stacking structure thereofHSIEH CHUN I·Filed 2012·Granted Feb 25, 2014·0 cites·18 claims
- 3945US2015140773A1Methods of forming insulative elementsMICRON TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 4042US2015194478A1Capacitors and Methods of Forming CapacitorsMICRON TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 4136US2012241865A1Integrated circuit structureANTONOV VASSIL·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →