Methods of forming insulative elements

Abstract

Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.

1 . A method of forming an insulative element, comprising:
 forming a first metal oxide material having a first dielectric constant on a substrate;   forming a second metal oxide material having a second dielectric constant different from the first dielectric constant over at least a portion of the first metal oxide material; and   heating at least one of the first metal oxide material and the second metal oxide material to crystallize at least a portion of the at least one of the first metal oxide material and the second metal oxide material.   
     
     
         2 . The method of  claim 1 , wherein forming a second metal oxide material having a second dielectric constant different from the first dielectric constant comprises forming a second metal oxide material having a second dielectric constant greater than the first dielectric constant. 
     
     
         3 . The method of  claim 1 , wherein heating at least one of the first metal oxide material and the second metal oxide material to crystallize at least a portion of the at least one of the first metal oxide material and the second metal oxide material comprises crystallizing substantially all of the first metal oxide material. 
     
     
         4 . The method of  claim 1 , further comprising forming a dielectric material having a third dielectric constant different than the first and second dielectric constants in contact with at least one of the first metal oxide material and the second metal oxide material. 
     
     
         5 . The method of  claim 1 , wherein forming a first metal oxide material having a first dielectric constant on a substrate comprises forming the first metal oxide material on an electrode. 
     
     
         6 . The method of  claim 1 , wherein heating at least one of the first metal oxide material and the second metal oxide material comprises heating the first metal oxide material and the second metal oxide material after forming both the first metal oxide material and the second metal oxide material. 
     
     
         7 . The method of  claim 6 , wherein heating the first metal oxide material and the second metal oxide material after forming both the first metal oxide material and the second metal oxide material comprises subjecting the first and second metal oxide materials to heat during at least one deposition or diffusion act occurring after forming the first and second metal oxide materials. 
     
     
         8 . A method of forming an insulative element, comprising:
 forming a substantially crystalline dielectric material on a substrate;   forming a metal oxide material having a dielectric constant greater than a dielectric constant of the substantially crystalline dielectric material over the substantially crystalline dielectric material; and   heating the substantially crystalline dielectric material and the metal oxide material to induce diffusion of at least some dopants of the metal oxide material into the substantially crystalline dielectric material.   
     
     
         9 . The method of  claim 8 , wherein forming a substantially crystalline dielectric material on a substrate comprises:
 forming a substantially amorphous metal oxide material on the substrate; and   annealing the substantially amorphous metal oxide material to crystallize a substantial portion of the substantially amorphous metal oxide material.   
     
     
         10 . The method of  claim 9 , wherein annealing the substantially amorphous metal oxide material to crystallize a substantial portion of the substantially amorphous metal oxide comprises annealing the substantially amorphous metal oxide material at a temperature of from about 300° C. to about 700° C. 
     
     
         11 . The method of  claim 8 , wherein forming a substantially crystalline dielectric material comprises forming the substantially crystalline dielectric material having a thickness in the range of from about 30 Å to about 80 Å. 
     
     
         12 . The method of  claim 8 , wherein forming a metal oxide material having a dielectric constant greater than a dielectric constant of the substantially crystalline dielectric material over the substantially crystalline dielectric material comprises forming the metal oxide material having a thickness of from about 5 Å to about 30 Å. 
     
     
         13 . The method of  claim 12 , further comprising forming another oxide material at least partially between the substantially crystalline dielectric material and the metal oxide material, the another oxide material having a composition different than each of the substantially crystalline dielectric material and the metal oxide material. 
     
     
         14 . The method of  claim 13 , wherein forming another oxide material comprises forming another oxide material having a thickness of from about 1 monolayer to about 5 Å. 
     
     
         15 . A method of forming a capacitor, comprising:
 forming a first electrode;   forming a dielectric material over and in contact with the first electrode, comprising:
 forming a first oxide having a first dielectric constant; 
 forming a second oxide having a second dielectric constant greater than the first dielectric constant over the first oxide; 
   heating at least one of the first oxide and the second oxide to at least partially crystallize at least one of the first oxide and the second oxide; and   forming a second electrode over the dielectric material.   
     
     
         16 . The method of  claim 15 , wherein forming a first oxide having a first dielectric constant comprises:
 forming a first portion of the first oxide in an amorphous state;   annealing the first portion of the first oxide to crystallize substantially all of the first portion of the first oxide; and   forming a second portion of the first oxide in an amorphous state over the annealed first portion of the first oxide.   
     
     
         17 . The method of  claim 16 , further comprising diffusing dopants of the second oxide into the crystallized first portion of the first oxide. 
     
     
         18 . The method of  claim 1 , wherein heating at least one of the first metal oxide material and the second metal oxide material to crystallize at least a portion of the at least one of the first metal oxide material and the second metal oxide material comprises heating the first metal oxide material to crystallize at least a portion of the first metal oxide material. 
     
     
         19 . The method of  claim 18 , further comprising dispersing dopants of the second metal oxide material in the crystallized at least a portion of the first metal oxide material. 
     
     
         20 . The method of  claim 19 , further comprising forming a dielectric material having a material composition different than the first metal oxide material and the second metal oxide material in contact with at least one of the first metal oxide material and the second metal oxide material.