US2014349461A1PendingUtilityA1

Method for using metal bilayer

51
Assignee: NANYA TECHNOLOGY CORPPriority: Apr 20, 2011Filed: Aug 13, 2014Published: Nov 27, 2014
Est. expiryApr 20, 2031(~4.7 yrs left)· nominal 20-yr term from priority
Inventors:Vassil AntonovVishwanath BhatChris M. Carlson
H10D 1/694H10D 1/696H01L 27/10844H01L 28/75H01L 28/65H10B 12/01
51
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for using a metal bilayer, comprising:
 providing a bottom electrode;   providing a dielectric layer disposed on and in direct contact with said lower electrode;   providing a metal bilayer which serves as a top electrode in a capacitor, said metal bilayer disposed on and in direct contact with said dielectric layer, wherein said metal bilayer consists of a noble metal in direct contact with said dielectric layer and a metal nitride in direct contact with said noble metal.   
     
     
         2 . The method for using a metal bilayer of  claim 1 , wherein said noble metal comprises Pt, Pd, Ir or Ru. 
     
     
         3 . The method for using a metal bilayer of  claim 1 , wherein said noble metal has a thickness ranging between 10 Å-40 Å. 
     
     
         4 . The method for using a metal bilayer of  claim 1 , wherein said metal nitride comprises at least one of TiN, TaN, ZrN, HfN, NbN and MoN. 
     
     
         5 . The method for using a metal bilayer of  claim 1 , wherein said metal nitride has a thickness ranging between 20 Å-50 Å. 
     
     
         6 . The method for using a metal bilayer of  claim 1 , wherein said top electrode has a thickness ranging between 75 Å-90 Å. 
     
     
         7 . The method for using a metal bilayer of  claim 1 , wherein said dielectric layer is in direct contact with said noble metal. 
     
     
         8 . The method for using a metal bilayer of  claim 1 , wherein said top electrode is free of W. 
     
     
         9 . The method for using a metal bilayer of  claim 1 , wherein said top electrode is free of Si. 
     
     
         10 . The method for using a metal bilayer of  claim 1 , wherein said capacitor is used in a dynamic random access memory.

Join the waitlist — get patent alerts

Track US2014349461A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.