Inventor · disambiguated record
Dong Kyun Sohn
Also filed as: SOHN DONG K · SOHN DONG KYUN
28 granted patents·6 pending applications·366 citations·filing 1998–2015
96Inventor score
Files withCHARTERED SEMICONDUCTOR MFG15GLOBALFOUNDRIES SG PTE LTD5HYUNDAI ELECTRONICS IND4SAMSUNG ELECTRONICS CO LTD3HYNIX SEMICONDUCTOR INC1
Top patents by PatentIndex Score
34 records- 0196US7479425B2Method for forming high-K charge storage deviceCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Jan 20, 2009·40 cites·28 claims
- 0293US6946349B1Method for integrating a SONOS gate oxide transistor into a logic/analog integrated circuit having several gate oxide thicknessesCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Sep 20, 2005·113 cites·20 claims
- 0392US8358007B2Integrated circuit system employing low-k dielectrics and method of manufacture thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2010·Granted Jan 22, 2013·18 cites·19 claims
- 0490US7202140B1Method to fabricate Ge and Si devices together for performance enhancementCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Apr 10, 2007·21 cites·20 claims
- 0589US7029976B1Method for SONOS EFLASH integrated circuitCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Apr 18, 2006·26 cites·12 claims
- 0686US7256112B2Laser activation of implanted contact plug for memory bitline fabricationCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Aug 14, 2007·15 cites·17 claims
- 0785US7727856B2Selective STI stress relaxation through ion implantationCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Jun 1, 2010·10 cites·55 claims
- 0883US6251780B1Method for fabricating thin film at high temperatureHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jun 26, 2001·32 cites·22 claims
- 0975US7338886B2Implantation-less approach to fabricating strained semiconductor on isolation wafersCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Mar 4, 2008·6 cites·25 claims
- 1073US6528401B2Method for fabricating polycide dual gate in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Mar 4, 2003·16 cites·18 claims
- 1171US7888214B2Selective stress relaxation of contact etch stop layer through layout designGLOBALFOUNDRIES SG PTE LTD·Filed 2005·Granted Feb 15, 2011·5 cites·29 claims
- 1270US8008744B2Selective STI stress relaxation through ion implantationGLOBALFOUNDRIES SG PTE LTD·Filed 2010·Granted Aug 30, 2011·2 cites·20 claims
- 1369US6995078B2Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatchCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Feb 7, 2006·12 cites·24 claims
- 1468US7585746B2Process integration scheme of SONOS technologyCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Sep 8, 2009·4 cites·15 claims
- 1565US8034670B2Reliable memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2009·Granted Oct 11, 2011·3 cites·27 claims
- 1665US7645687B2Method to fabricate variable work function gates for FUSI devicesCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Jan 12, 2010·5 cites·33 claims
- 1759US6177335B1Method of forming polycideHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jan 23, 2001·8 cites·26 claims
- 1853US7202164B2Method of forming ultra thin silicon oxynitride for gate dielectric applicationsCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Apr 10, 2007·4 cites·46 claims
- 1952US9147654B2Integrated circuit system employing alternating conductive layersSHENG HAIFENG·Filed 2008·Granted Sep 29, 2015·1 cites·20 claims
- 2052US7166522B2Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatchCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Jan 23, 2007·3 cites·25 claims
- 2150US2009023280A1Method for forming high-k charge storage deviceCHARTERED SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 2249US6077750AMethod for forming epitaxial Co self-align silicide for semiconductor deviceLG SEMICON CO LTD·Filed 1998·Granted Jun 20, 2000·13 cites·18 claims
- 2348US2008087958A1Semiconductor device with doped transistorCHARTERED SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 2446US7326609B2Semiconductor device and fabrication methodCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Feb 5, 2008·0 cites·10 claims
- 2545US2013034954A1Integrated circuit system including nitride layer technologyGLOBALFOUNDRIES SG PTE LTD·Filed 2012·Application pending·0 cites
- 2643US9502413B2Semiconductor devices including raised source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 22, 2016·0 cites·9 claims
- 2743US9425148B2Semiconductor devices having contacts with intervening spacers and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Aug 23, 2016·0 cites·20 claims
- 2843US6885103B2Semiconductor device including ternary phase diffusion barrierHYUNDAI ELECTRONICS IND·Filed 2003·Granted Apr 26, 2005·1 cites·5 claims
- 2943US2013320457A1Semiconductor devices including source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3041US6489210B1Method for forming dual gate in DRAM embedded with a logic circuitHYUNDAI ELECTRONICS CO LTD·Filed 1999·Granted Dec 3, 2002·7 cites·8 claims
- 3140US8283263B2Integrated circuit system including nitride layer technologyNAGARAD SRIPAD SHESHAGIRI·Filed 2006·Granted Oct 9, 2012·0 cites·10 claims
- 3238US2006166435A1Synthesis of GE nanocrystal memory cell and using a block layer to control oxidation kineticsTEO LEE W·Filed 2005·Application pending·0 cites
- 3334US2002034868A1Semiconductor device having a gate and fabrication method thereforHYUNDAI MICRO ELECTRONICS CO·Filed 2001·Application pending·0 cites
- 3432US6649520B1Method of forming film for reduced ohmic contact resistance and ternary phase layer amorphous diffusion barrierHYNIX SEMICONDUCTOR INC·Filed 1999·Granted Nov 18, 2003·1 cites·22 claims
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