Inventor · disambiguated record
Sanjay Natarajan
Also filed as: NATARAJAN SANJAY · NATARAJAN SANJAY S
31 granted patents·11 pending applications·102 citations·filing 2000–2023
95Inventor score
Top patents by PatentIndex Score
42 records- 0197US11295786B23D dram structure with high mobility channelAPPLIED MATERIALS INC·Filed 2020·Granted Apr 5, 2022·5 cites·8 claims
- 0293US11621266B2Method of testing a gap fill for DRAMAPPLIED MATERIALS INC·Filed 2021·Granted Apr 4, 2023·2 cites·11 claims
- 0391US11152479B2Semiconductor device, method of making a semiconductor device, and processing systemAPPLIED MATERIALS INC·Filed 2020·Granted Oct 19, 2021·3 cites·11 claims
- 0490US11195923B2Method of fabricating a semiconductor device having reduced contact resistanceAPPLIED MATERIALS INC·Filed 2019·Granted Dec 7, 2021·5 cites·13 claims
- 0589US10529602B1Method and apparatus for substrate fabricationAPPLIED MATERIALS INC·Filed 2018·Granted Jan 7, 2020·5 cites·20 claims
- 0688US11682668B2Stacked transistor deviceAPPLIED MATERIALS INC·Filed 2021·Granted Jun 20, 2023·1 cites·14 claims
- 0788US9627312B2On-chip capacitors and methods of assembling sameCHILDS MICHAEL A·Filed 2011·Granted Apr 18, 2017·17 cites·7 claims
- 0887US10553485B2Methods of producing fully self-aligned vias and contactsMICROMATERIALS LLC·Filed 2018·Granted Feb 4, 2020·5 cites·14 claims
- 0986US11171141B2Gap fill methods of forming buried word lines in DRAM without forming bottom voidsAPPLIED MATERIALS INC·Filed 2020·Granted Nov 9, 2021·2 cites·20 claims
- 1086US7019326B2Transistor with strain-inducing structure in channelINTEL CORP·Filed 2003·Granted Mar 28, 2006·35 cites·15 claims
- 1184US11114320B2Processing system and method of forming a contactAPPLIED MATERIALS INC·Filed 2019·Granted Sep 7, 2021·3 cites·19 claims
- 1280US10903112B2Methods and apparatus for smoothing dynamic random access memory bit line metalAPPLIED MATERIALS INC·Filed 2019·Granted Jan 26, 2021·2 cites·20 claims
- 1378US11437273B2Self-aligned contact and contact over active gate structuresMircomaterials LLC·Filed 2020·Granted Sep 6, 2022·2 cites·8 claims
- 1475US11309404B2Integrated CMOS source drain formation with advanced controlAPPLIED MATERIALS INC·Filed 2019·Granted Apr 19, 2022·1 cites·14 claims
- 1575US10892187B2Method for creating a fully self-aligned viaMICROMATERIALS LLC·Filed 2019·Granted Jan 12, 2021·2 cites·13 claims
- 1673US11004687B2Gate contact over active processesAPPLIED MATERIALS INC·Filed 2019·Granted May 11, 2021·1 cites·20 claims
- 1769US12062708B2Selective silicon etch for gate all around transistorsAPPLIED MATERIALS INC·Filed 2022·Granted Aug 13, 2024·0 cites·10 claims
- 1869US11705335B2Conformal high concentration boron doping of semiconductorsAPPLIED MATERIALS INC·Filed 2022·Granted Jul 18, 2023·0 cites·20 claims
- 1969US11508828B2Selective silicon etch for gate all around transistorsAPPLIED MATERIALS INC·Filed 2021·Granted Nov 22, 2022·0 cites·14 claims
- 2069US2022199804A1Integrated CMOS Source Drain Formation With Advanced ControlAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2168US11462411B2Gate contact over active regionsAPPLIED MATERIALS INC·Filed 2021·Granted Oct 4, 2022·0 cites·20 claims
- 2262US11328928B2Conformal high concentration boron doping of semiconductorsAPPLIED MATERIALS INC·Filed 2019·Granted May 10, 2022·0 cites·16 claims
- 2362US2022367270A1Self-aligned contact and contact over active gate structuresMICROMATERIALS LLC·Filed 2022·Application pending·0 cites
- 2461US11164938B2DRAM capacitor moduleMICROMATERIALS LLC·Filed 2020·Granted Nov 2, 2021·0 cites·16 claims
- 2561US2022013624A1DRAM Capacitor ModuleMICROMATERIALS LLC·Filed 2021·Application pending·0 cites
- 2660US11749315B23D DRAM structure with high mobility channelAPPLIED MATERIALS INC·Filed 2021·Granted Sep 5, 2023·0 cites·12 claims
- 2760US11177254B2Stacked transistor deviceAPPLIED MATERIALS INC·Filed 2019·Granted Nov 16, 2021·0 cites·17 claims
- 2859US2022093749A1Method of fabricating a semiconductor device having reduced contact resistanceAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 2958US2020235104A1Cap Layer For Bit Line Resistance ReductionAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 3057US7112859B2Stepped tip junction with spacer layerINTEL CORP·Filed 2004·Granted Sep 26, 2006·7 cites·17 claims
- 3155US10700072B2Cap layer for bit line resistance reductionAPPLIED MATERIALS INC·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 3255US2025221020A1Double-sided device contacts and through vias for performance and layout benefitsINTEL CORP·Filed 2023·Application pending·0 cites
- 3354US11189635B23D-NAND moldAPPLIED MATERIALS INC·Filed 2020·Granted Nov 30, 2021·0 cites·20 claims
- 3453US7172960B2Multi-layer film stack for extinction of substrate reflections during patterningINTEL CORP·Filed 2000·Granted Feb 6, 2007·4 cites·12 claims
- 3552US12374584B2Multi color stack for self aligned dual pattern formation for multi purpose device structuresAPPLIED MATERIALS INC·Filed 2021·Granted Jul 29, 2025·0 cites·19 claims
- 3649US7291552B2Multi-layer film stack for extinction of substrate reflections during patterningINTEL CORP·Filed 2005·Granted Nov 6, 2007·0 cites·20 claims
- 3747US7473591B2Transistor with strain-inducing structure in channelINTEL CORP·Filed 2005·Granted Jan 6, 2009·0 cites·12 claims
- 3846US2006086954A1Multi-layer film stack for extinction of substrate reflections during patterningNATARAJAN SANJAY S·Filed 2005·Application pending·0 cites
- 3946US2006202267A1Methods of optimization of implant conditions to minimize channeling and structures formed therebyRANADE PUSHKAR·Filed 2006·Application pending·0 cites
- 4040US2006084248A1Methods of optimization of implant conditions to minimize channeling and structures formed therebyRANADE PUSHKAR·Filed 2004·Application pending·0 cites
- 4134US2007004114A1Sacrificial capping layer for transistor performance enhancementLEE SEOK-HEE·Filed 2005·Application pending·0 cites
- 4232US2004075119A1Forming polysilicon structuresFiled 2002·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →