Inventor · disambiguated record
Young-Chul Jang
Also filed as: JANG YOUNG-CHUL
17 granted patents·6 pending applications·300 citations·filing 1995–2011
94Inventor score
Top patents by PatentIndex Score
23 records- 0195US7683404B2Stacked memory and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 23, 2010·32 cites·20 claims
- 0291US7602028B2NAND flash memory devices having 3-dimensionally arranged memory cells and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·23 cites·18 claims
- 0385US6211094B1Thickness control method in fabrication of thin-film layers in semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 3, 2001·101 cites·19 claims
- 0480US5863807AManufacturing method of a semiconductor integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jan 26, 1999·75 cites·6 claims
- 0577US8343812B2Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·4 cites·9 claims
- 0673US5740065AMethod for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Apr 14, 1998·36 cites·12 claims
- 0772US7759203B2MOS transistor having protruded-shape channel and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 20, 2010·3 cites·12 claims
- 0870US8034668B2Method for forming semiconductor device having metallization comprising select lines, bit lines and word linesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·3 cites·14 claims
- 0967US7910433B2Methods of fabricating multi-layer nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 22, 2011·2 cites·18 claims
- 1066US7960844B23-dimensional flash memory device, method of fabrication and method of operationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 14, 2011·6 cites·20 claims
- 1161US7538386B2MOS transistor having protruded-shape channel and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 26, 2009·6 cites·20 claims
- 1259US8258563B2Multi-layer memory devicesJANG YOUNG-CHUL·Filed 2011·Granted Sep 4, 2012·1 cites·9 claims
- 1358US7601998B2Semiconductor memory device having metallization comprising select lines, bit lines and word linesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·1 cites·10 claims
- 1453US7170133B2Transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 30, 2007·4 cites·9 claims
- 1550US2008280279A1System and Method for Supporting Lecture Room on the Basis of UbiquitousJANG YOUNG CHUL·Filed 2006·Application pending·0 cites
- 1649US7563683B2Transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 21, 2009·0 cites·17 claims
- 1749US7141851B2Transistors having a recessed channel regionSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·3 cites·13 claims
- 1847US8399308B2Method for forming semiconductor device having metallization comprising select lines, bit lines and word linesJANG YOUNG-CHUL·Filed 2011·Granted Mar 19, 2013·0 cites·14 claims
- 1946US2010012980A1Contact Structures in Substrate Having Bonded Interface, Semiconductor Device Including the Same, Methods of Fabricating the SameSONG MIN-SUNG·Filed 2009·Application pending·0 cites
- 2045US2008108213A1Multi-layer nonvolatile memory devices and methods of fabricating the sameJANG YOUNG-CHUL·Filed 2007·Application pending·0 cites
- 2143US2009208551A1Biological implantation material and method for preparing sameBIOLAND LTD·Filed 2008·Application pending·0 cites
- 2242US2006270138A1Transistors having a recessed channel region and methods of fabricating the sameJANG YOUNG-CHUL·Filed 2006·Application pending·0 cites
- 2338US2007181170A1Apparatus including an improved nozzle unitKIM KYOUNG-HO·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →