Inventor · disambiguated record
Hag-Ju Cho
Also filed as: CHO HAG-JU
25 granted patents·15 pending applications·485 citations·filing 1997–2023
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD25CHO HAG-JU3IMEC INTER UNI MICRO ELECTR2NA HOON-JOO2GOVOREANU BOGDAN1
Top patents by PatentIndex Score
40 records- 0198US6509601B1Semiconductor memory device having capacitor protection layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 21, 2003·231 cites·13 claims
- 0294US6821862B2Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 23, 2004·80 cites·12 claims
- 0386US8293599B2Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materialsNA HOON-JOO·Filed 2009·Granted Oct 23, 2012·12 cites·18 claims
- 0486US7972950B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·8 cites·10 claims
- 0585US7507652B2Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 24, 2009·10 cites·31 claims
- 0683US11024631B2Integrated circuit device including field isolation layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 1, 2021·3 cites·20 claims
- 0782US7390719B2Method of manufacturing a semiconductor device having a dual gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·10 cites·20 claims
- 0878US8748239B2Method of fabricating a gateSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 10, 2014·4 cites·2 claims
- 0977US6740531B2Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structuresSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 25, 2004·19 cites·19 claims
- 1074US6096592AMethods of forming integrated circuit capacitors having plasma treated regions thereinSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 1, 2000·34 cites·42 claims
- 1173US6001660AMethods of forming integrated circuit capacitors using metal reflow techniquesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 14, 1999·48 cites·17 claims
- 1269US9236313B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 12, 2016·1 cites·16 claims
- 1368US8313993B2Semiconductor device and method for fabricating the sameCHO HAG-JU·Filed 2009·Granted Nov 20, 2012·5 cites·15 claims
- 1468US7494859B2Semiconductor device having metal gate patterns and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·4 cites·22 claims
- 1567US8524554B2Semiconductor device and method for fabricating the sameIMEC·Filed 2012·Granted Sep 3, 2013·2 cites·20 claims
- 1666US8557651B2Method of manufacturing a semiconductor device using an etchantLEE HYO-SAN·Filed 2011·Granted Oct 15, 2013·2 cites·19 claims
- 1763US7531881B2Semiconductor devices having transistors with different gate structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·2 cites·14 claims
- 1862US7023037B2Integrated circuit devices having dielectric regions protected with multi-layer insulation structuresSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 4, 2006·8 cites·41 claims
- 1956US8119511B2Non-volatile memory device with improved immunity to erase saturation and method for manufacturing sameGOVOREANU BOGDAN·Filed 2011·Granted Feb 21, 2012·1 cites·8 claims
- 2055US8367502B2Method of manufacturing dual gate semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 5, 2013·1 cites·14 claims
- 2155US2023402382A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2252US7892958B2Methods of fabricating semiconductor devices having transistors with different gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 22, 2011·0 cites·4 claims
- 2351US8932922B2Method of fabricating semiconductor device having dual gateNA HOON-JOO·Filed 2011·Granted Jan 13, 2015·0 cites·12 claims
- 2449US2009134453A1Non-Volatile Memory Device with Improved Immunity to Erase Saturation and Method for Manufacturing SameIMEC INTER UNI MICRO ELECTR·Filed 2008·Application pending·0 cites
- 2547US7727841B2Method of manufacturing semiconductor device with dual gatesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 1, 2010·0 cites·15 claims
- 2646US8501550B2Method of fabricating gate and method of manufacturing semiconductor device using the sameKIM JONG-PIL·Filed 2011·Granted Aug 6, 2013·0 cites·11 claims
- 2744US7399670B2Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 15, 2008·0 cites·19 claims
- 2844US2007166931A1Methods of Manufacturing A Semiconductor Device for Improving the Electrical Characteristics of A Dielectric FilmPARK HONG-BAE·Filed 2006·Application pending·0 cites
- 2943US2006189055A1Method of forming a composite layer, method of manufacturing a gate structure by using the method of forming the composite layer and method of manufacturing a capacitor by using the method of forming the composite layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3043US2007026596A1Gate electrode structure and method of forming the same, and semiconductor transistor having the gate electrode structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3143US2009134466A1Dual work function semiconductor device and method for manufacturing the sameINTERUNIVERSITAIR MCROELEKTRON·Filed 2008·Application pending·0 cites
- 3243US2010193875A1Semiconductor device with dual gates and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 3343US2005073803A1Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using sameFiled 2004·Application pending·0 cites
- 3441US2008023765A1Semiconductor Devices and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3541US2008164581A1Electronic device and process for manufacturing the sameIMEC INTER UNI MICRO ELECTR·Filed 2008·Application pending·0 cites
- 3640US2007128775A1Method of manufacturing a semiconductor device having a tungsten carbon nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3735US2012238067A1Methods of Fabricating Semiconductor Devices Having Gate TrenchesJEONG WON-CHEOL·Filed 2012·Application pending·0 cites
- 3835US2007026621A1Non-volatile semiconductor devices and methods of manufacturing the sameCHO HAG-JU·Filed 2006·Application pending·0 cites
- 3934US2007059929A1Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the sameCHO HAG-JU·Filed 2006·Application pending·0 cites
- 4032US2016276342A1Semiconductor devices including shallow trench isolation (sti) linersSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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