Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using same

Abstract

Integrated circuit devices are manufactured by exposing at least a portion of an insulation layer that comprises oxygen to a metal precursor that is reactive with oxygen so as to form a metal oxide layer on the portion of the insulation layer. The metal oxide layer may reduce the diffusion of impurities, such as hydrogen, into the insulation layer, which may degrade the electrical characteristics of the insulation layer.

1 - 13 . (Canceled)  
   
   
       14 . An integrated circuit device, comprising: 
 a capacitor that comprises a lower electrode layer, a dielectric layer on the lower electrode layer, and an upper electrode layer on the dielectric layer;    a first metal oxide layer that is disposed on an exposed portion of the dielectric layer and has a first density associated therewith; and    a second metal oxide layer that encapsulates the capacitor and the first metal oxide layer and has a second density associated therewith that is greater than the first density.    
   
   
       15 . The integrated circuit device of  claim 14 , wherein the first and second metal oxide layers each comprise an element selected from the group of elements consisting of: Al, Ta, Ti, Zr, Mg, Ce, Y, Nb, Hf, Sr, and Ca.  
   
   
       16 . The integrated circuit device of  claim 14 , wherein the dielectric layer comprises a material selected from the group of materials consisting of: TiO 2 , SiO 2 , Ta 2 O 5 , Al 2 O 3 , BaTiO 3 , SrTiO 3 , (Ba, Sr)TiO 3 , Bi 4 Ti 3 O 12 , PbTiO 3 , PZT((Pb, La)(Zr, Ti)O 3 ), and (SrBi 2 Ta 2 O 9 )(SBT).  
   
   
       17 . The integrated circuit device of  claim 14 , wherein the first metal oxide layer is disposed on a sidewall of the dielectric layer and a portion of a surface of the dielectric layer that is adjacent to the upper electrode.  
   
   
       18 . A method of manufacturing an integrated circuit device, comprising: 
 forming an insulation layer that comprises oxygen on a substrate; and    forming a first metal oxide layer on at least a portion of the insulation layer by exposing the at least a portion of the insulation layer to a first metal precursor that is reactive with the oxygen in the insulation layer.    
   
   
       19 . The method of  claim 18 , further comprising: 
 forming a lower electrode on the substrate; and    forming an upper electrode on the insulation layer;    wherein forming the insulation layer that comprises oxygen on the substrate comprises:    forming the insulation layer that comprises oxygen on the lower electrode.    
   
   
       20 . The method of  claim 19 , further comprising: 
 forming a second metal oxide layer on the substrate that encapsulates the lower electrode, the insulation layer, the first metal oxide layer, and the upper electrode.    
   
   
       21 . The method of  claim 20 , wherein forming the first metal oxide layer comprises: 
 pulsing the first metal precursor over the integrated circuit device; and    exposing the integrated circuit device to an inert gas.    
   
   
       22 . The method of  claim 21 , wherein forming the second metal oxide layer comprises: 
 pulsing a second metal precursor over the integrated circuit device;    exposing the integrated circuit device to an inert gas; then    pulsing oxygen gas over the integrated circuit device; then    exposing the integrated circuit device to an inert gas.    
   
   
       23 . The method of  claim 18 , further comprising: 
 thermally treating the integrated circuit device in an oxygen atmosphere using one of a rapid thermal processing apparatus and a furnace type thermal processing apparatus.    
   
   
       24 . The method of  claim 18 , further comprising: 
 forming a conductive region on the substrate, the insulation layer being disposed on the conductive region and the substrate;    forming an opening in the insulation layer so as to expose at least a portion of the conductive region; and    forming the first metal oxide layer on the at least a portion of the insulation layer while maintaining the exposed portion of the conductive region substantially devoid of the first metal oxide layer by exposing the at least a portion of the insulation layer and the exposed portion of the conductive region to the first metal precursor that is reactive with the oxygen in the insulation layer.