Inventor · disambiguated record
Huy Cao
Also filed as: CAO HUY · CAO HUY M
21 granted patents·5 pending applications·85 citations·filing 2013–2022
93Inventor score
Top patents by PatentIndex Score
26 records- 0197US9455204B110 nm alternative N/P doped fin for SSRW schemeGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 27, 2016·21 cites·20 claims
- 0295US10325819B1Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 18, 2019·15 cites·20 claims
- 0393US10269654B1Methods, apparatus and system for replacement contact for a finFET deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 23, 2019·12 cites·20 claims
- 0493US9330982B1Semiconductor device with diffusion barrier film and method of manufacturing the sameGLOBALFOUNDRIES INC·Filed 2015·Granted May 3, 2016·11 cites·20 claims
- 0590US9390979B2Opposite polarity borderless replacement metal contact schemeGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 12, 2016·9 cites·14 claims
- 0685US9589829B1FinFET device including silicon oxycarbon isolation structureGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 7, 2017·4 cites·20 claims
- 0784US9793169B1Methods for forming mask layers using a flowable carbon-containing silicon dioxide materialGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 17, 2017·3 cites·20 claims
- 0878US9991363B1Contact etch stop layer with sacrificial polysilicon layerGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 5, 2018·2 cites·19 claims
- 0977US10431500B1Multi-step insulator formation in trenches to avoid seams in insulatorsGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·2 cites·19 claims
- 1077US8940650B2Methods for fabricating integrated circuits utilizing silicon nitride layersGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 27, 2015·4 cites·19 claims
- 1166US9318440B2Formation of carbon-rich contact liner materialGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 19, 2016·1 cites·20 claims
- 1264US9130019B2Formation of carbon-rich contact liner materialGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 8, 2015·1 cites·20 claims
- 1360US10930549B2Cap structureGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 23, 2021·0 cites·15 claims
- 1459US10964599B2Multi-step insulator formation in trenches to avoid seams in insulatorsGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 30, 2021·0 cites·18 claims
- 1556US10460986B2Cap structureGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 1651US2023260788A1Carbon-nitride-carbon hardmask layerINTEL CORP·Filed 2022·Application pending·0 cites
- 1750US2018005893A1Methods for forming mask layers using a flowable carbon-containing silicon dioxide materialGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 1849US10043753B2Airgaps to isolate metallization featuresGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 7, 2018·0 cites·20 claims
- 1948US11756786B2Forming high carbon content flowable dielectric film with low processing damageIBM·Filed 2019·Granted Sep 12, 2023·0 cites·14 claims
- 2045US9620381B2Facilitating etch processing of a thin film via partial implantation thereofGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 11, 2017·0 cites·20 claims
- 2143US10256089B2Replacement contact cuts with an encapsulated low-K dielectricGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 9, 2019·0 cites·19 claims
- 2242US2014346648A1Low-k nitride film and method of makingGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2341US2019326416A1Material combinations for polish stops and gate capsGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
- 2439US10056458B2Siloxane and organic-based MOL contact patterningGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 21, 2018·0 cites·19 claims
- 2538US10453751B2Tone inversion method and structure for selective contact via patterningGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 22, 2019·0 cites·10 claims
- 2635US2017338325A1Method, apparatus and system for providing nitride cap layer in replacement metal gate structureGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →