Inventor · disambiguated record
Fujio Yagihashi
Also filed as: YAGIHASHI FUJIO
38 granted patents·19 pending applications·410 citations·filing 1986–2024
98Inventor score
Files withSHINETSU CHEMICAL CO25MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17HAMADA YOSHITAKA6AIST5OGIHARA TSUTOMU1
Top patents by PatentIndex Score
57 records- 0196US8951917B2Composition for forming resist underlayer film and patterning process using the sameOGIHARA TSUTOMU·Filed 2012·Granted Feb 10, 2015·16 cites·24 claims
- 0294US7754330B2Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2009·Granted Jul 13, 2010·24 cites·4 claims
- 0392US7202013B2Antireflective film material, and antireflective film and pattern formation method using the sameSHINETSU CHEMICAL CO·Filed 2004·Granted Apr 10, 2007·49 cites·5 claims
- 0490US7405459B2Semiconductor device comprising porous filmSHINETSU CHEMICAL CO·Filed 2007·Granted Jul 29, 2008·13 cites·4 claims
- 0589US8277600B2High-temperature bonding composition, substrate bonding method, and 3-D semiconductor deviceHAMADA YOSHITAKA·Filed 2009·Granted Oct 2, 2012·19 cites·2 claims
- 0689US6340735B1Coating solution and method for forming dielectric filmSHINETSU CHEMICAL CO·Filed 2000·Granted Jan 22, 2002·29 cites·6 claims
- 0788US4808711ACephalosporin derivativesSANKEI YAKUHIN KK·Filed 1986·Granted Feb 28, 1989·29 cites·9 claims
- 0884US7303785B2Antireflective film material, and antireflective film and pattern formation method using the sameSHINETSU CHEMICAL CO·Filed 2004·Granted Dec 4, 2007·31 cites·16 claims
- 0982US2024300984A1Silanol Compound And Method For Producing Silanol CompoundAIST·Filed 2024·Application pending·0 cites
- 1078US7402621B2Porous-film-forming composition, preparation method of the composition, porous film and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2005·Granted Jul 22, 2008·7 cites·6 claims
- 1177US6841334B2Onium salts and positive resist materials using the sameSHINETSU CHEMICAL CO·Filed 2003·Granted Jan 11, 2005·6 cites·11 claims
- 1275US12024532B2Silanol compound and method for producing silanol compoundAIST·Filed 2021·Granted Jul 2, 2024·0 cites·4 claims
- 1375US7084505B2Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 1, 2006·14 cites·8 claims
- 1474US7119354B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 10, 2006·13 cites·8 claims
- 1573US8257528B2Substrate joining method and 3-D semiconductor deviceYAGIHASHI FUJIO·Filed 2009·Granted Sep 4, 2012·5 cites·10 claims
- 1672US5633409ATristertbutoxyphenyl sulfonium tosylate compoundSHINETSU CHEMICAL CO·Filed 1995·Granted May 27, 1997·10 cites·1 claims
- 1771US7132473B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 7, 2006·11 cites·3 claims
- 1870US8715913B2Silicon-containing resist underlayer film-forming composition and patterning processSHINETSU CHEMICAL CO·Filed 2012·Granted May 6, 2014·2 cites·26 claims
- 1970US5691112ASulfonium salt and chemically amplified positive resist compositionSHINETSU CHEMICAL CO·Filed 1996·Granted Nov 25, 1997·9 cites·7 claims
- 2069US2025171318A1Silanol compound, method for producing said silanol compound, and composition containing said silanol compoundAIST·Filed 2023·Application pending·0 cites
- 2164US7786022B2Method for forming insulating film with low dielectric constantSHINETSU CHEMICAL CO·Filed 2008·Granted Aug 31, 2010·1 cites·6 claims
- 2262US2021061824A1Silanol compound and method for producing silanol compoundAIST·Filed 2018·Application pending·0 cites
- 2360US6093240ABinder composition and aqueous coating compositionSHINETSU CHEMICAL CO·Filed 1997·Granted Jul 25, 2000·19 cites·15 claims
- 2459US7244657B2Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2003·Granted Jul 17, 2007·5 cites·14 claims
- 2559US7239018B2Composition for forming a porous film prepared by hydrolysis and condensation of an alkoxysilane using a trialkylmethylammonium hydroxide catalystMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jul 3, 2007·6 cites·11 claims
- 2658US7651829B2Positive resist material and pattern formation method using the sameSHINETSU CHEMICAL CO·Filed 2004·Granted Jan 26, 2010·9 cites·8 claims
- 2758US6680107B2Film forming composition, porous film and their preparationSHINETSU CHEMICAL CO·Filed 2002·Granted Jan 20, 2004·3 cites·8 claims
- 2856US5629134AChemically amplified positive resist compositionSHINETSU CHEMICAL CO·Filed 1995·Granted May 13, 1997·16 cites·19 claims
- 2954US7357961B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 15, 2008·4 cites·7 claims
- 3054US5935311AWater-resistant ink composition and writing instrumentSHINETSU CHEMICAL CO·Filed 1998·Granted Aug 10, 1999·15 cites·6 claims
- 3153US7309722B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2003·Granted Dec 18, 2007·4 cites·16 claims
- 3253US5314931AResist compositionsSHINETSU CHEMICAL CO·Filed 1992·Granted May 24, 1994·11 cites·9 claims
- 3352US2022081305A1Crystal, method of producing crystal, and method of self-organizing silanol compoundAIST·Filed 2019·Application pending·0 cites
- 3451US2007178319A1Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 3551US2007087124A1Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 3651US2007135565A1Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 3750US7126208B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Oct 24, 2006·2 cites·8 claims
- 3850US2006289849A1Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 3950US2008118737A1Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 4049US5412050APolymer having a narrow dispersion of molecular weight and a manufacturing process thereofSHINETSU CHEMICAL CO·Filed 1993·Granted May 2, 1995·7 cites·18 claims
- 4149US2006220253A1Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor deviceHAMADA YOSHITAKA·Filed 2006·Application pending·0 cites
- 4248US7332446B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2004·Granted Feb 19, 2008·1 cites·12 claims
- 4348US2009294922A1Organic silicon oxide fine particle and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor deviceHAMADA YOSHITAKA·Filed 2009·Application pending·0 cites
- 4447US7341775B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 11, 2008·1 cites·14 claims
- 4547US7205338B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 17, 2007·0 cites·10 claims
- 4647US5523370APoly(para-T-butoxycarbonyloxystyrene) and method of makingSHINETSU CHEMICAL CO·Filed 1995·Granted Jun 4, 1996·7 cites·8 claims
- 4747US2008290472A1Semiconductor interlayer-insulating film forming composition, preparation method thereof, film forming method, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2008·Application pending·0 cites
- 4847US2008292863A1Siloxane polymer, preparation method thereof, porous-film forming coating solution containing the polymer, porous film, and semiconductor device using the porous filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2008·Application pending·0 cites
- 4946US6667415B1Tertiary butyl 4,4-bis(4′-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the sameSHINETSU CHEMICAL CO·Filed 1994·Granted Dec 23, 2003·2 cites·16 claims
- 5046US2012207917A1Conductive pattern-forming composition and methodHAMADA YOSHITAKA·Filed 2012·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
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