Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Abstract

Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R 1 ) 4 N] + [R 2 X] −   ( 1 ) H k [(R 1 ) 4 N] m + Y n−   ( 2 ) wherein X represents CO 2 , OSO 3 or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3 or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

1 - 3 . (canceled)  
     
     
         4 . A porous film prepared from a composition consisting essentially of a siloxane polymer and one or more quaternary ammonium salts represented by formula (1) or (2):  
         [(R 1 ) 4 N] + [R 2 X] −   (1)  H k [(R 1 ) 4 N] m   + Y n−   (2)  
       wherein R 1  independently represents a straight chain or branched alkyl or aryl group having 1 to 10 carbons which may have a substituent and R 1 s may be same or different; R 2  represents a hydrogen atom or an straight chain or branched alkyl or aryl group having 1 to 10 carbons which may have a substituent; X represents CO 2 , OSO 3  or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3  or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.  
     
     
         5 . An interlevel insulator film prepared from a composition consisting essentially of a siloxane polymer and one or more quaternary ammonium salts represented by formula (1) or (2):  
         [(R 1 ) 4 N] + [R 2 X] −   (1)  H k [R 1 ) 4 N] m   +Y   n−   (2)  
       wherein R 1  independently represents a straight chain or branched alkyl or aryl group having 1 to 10 carbons which may have a substituent and R 1 s may be same or different; R 2  represents a hydrogen atom or an straight chain or branched alkyl or aryl group having 1 to 10 carbons which may have a substituent; X represents CO 2 , OSO 3  or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 3 , NO 3  or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.  
     
     
         6 . A semiconductor device comprising an internal porous film prepared by 
 applying on a substrate a composition for forming a porous film comprising a siloxane polymer and one or more quaternary ammonium salts represented by formula (1) or (2):      [(R 1 ) 4 N] + [R 2 X] −   (1)  H k [(R 1 ) 4 N] m   + Y n−   (2)    wherein R 1  independently represents a straight chain or branched alkyl or aryl group having 1 to 10 carbons which may have a substituent and R 1 s may be same or different; R 2  represents a hydrogen atom or an straight chain or branched alkyl or aryl group having 1 to 10 carbons which may have a substituent; X represents CO 2 , OSO 3  or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3  or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1;    and heating.    
     
     
         7 . The semiconductor device according to  claim 6  wherein said siloxane polymer has a weight-average molecular weight between 10,000 and 1,000,000 using polyethylene as a standard.  
     
     
         8 . The semiconductor device according to  Claim 6  wherein said porous film is between metal interconnections in a same layer of multi-level interconnects, or is between upper and lower metal interconnection layers.  
     
     
         9 . The porous film according to  claim 4  wherein the one or more quaternary ammonium salts are present in an amount of 0.001 to 10 parts by weight per one part by weight of the siloxane polymer.  
     
     
         10 . The porous film according to  claim 4  having a modulus of elasticity of 4.3 GPa or greater.  
     
     
         11 . The porous film according to  claim 10  having a modulus of elasticity of 5 to 40 GPa.  
     
     
         12 . The interlevel insulator film according to  claim 5  wherein the one or more quaternary ammonium salts are present in an amount of 0.001 to 10 parts by weight per one part by weight of the siloxane polymer.  
     
     
         13 . The interlevel insulator film according to  claim 5  having a modulus of elasticity of 4.3 GPa or greater.  
     
     
         14 . The interlevel insulator film according to  claim 13  having a modulus of elasticity of 5 to 40 GPa.  
     
     
         15 . The semiconductor device according to  claim 6  wherein the one or more quaternary ammonium salts in the composition are present in an amount of 0.001 to 10 parts by weight per one part by weight of the siloxane polymer.  
     
     
         16 . The semiconductor device according to  claim 6  wherein heating the composition forms a porous film and the porous film has a modulus of elasticity of 4.3 GPa or greater.  
     
     
         17 . The semiconductor device according to  claim 16  wherein the porous film has a modulus of elasticity of 5 to 40 GPa.