Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Abstract

The invention includes a semiconductor device. Specifically provided is a semiconductor device comprising a porous film therein, the porous film being formable by a composition comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1) : R n Si(OR′) 4-n . Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.

1 . A semiconductor device comprising a porous film therein, the porous film being formable by a composition comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by formula (1): 
       R n Si(OR′) 4-n   (1) wherein each R independently represents a linear or branched alkyl group having 1 to 8 carbons or an aryl group, and when there are two or more Rs, each may be the same or different; each R′ independently represents an alkyl group having 1 to 4 carbons, and when there are two or more R's, each R′ may be the same or different; and n is an integer from 0 to 3.    
   
   
       2 . The semiconductor device according to  claim 1  wherein said surfactant is a quaternary ammonium salt which can form a micelle when dissolved.  
   
   
       3 . The semiconductor device according to  claim 2  wherein said quaternary ammonium salt is an alkyltrimethylammonium salt represented by formula (2): 
       R″N+(CH 3 ) 3 X −   (2) wherein R″ represents a linear or branched alkyl group having 8 to 20 carbons and X represents an atom or functional group which can form anion.    
   
   
       4 . The semiconductor device according to  claim 2  wherein said aprotic polar solvent has a dielectric constant of 20 or more.  
   
   
       5 . The semiconductor device according to  claim 2  wherein said aprotonic polar solvent is one or more selected from the group consisting of acetonitrile, propionitrile, isobutyronitrile, N-methylpyrrolidone, N, N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, hexamethylphosphortriamide, nitrobenzene and nitromethane.  
   
   
       6 . The semiconductor device according to  claim 2  wherein said porous film is between metal interconnections in a same layer of multi-level interconnects or between upper and lower metal interconnection layers.  
   
   
       7 . The semiconductor device according to  claim 1  wherein said quaternary ammonium salt is an alkyltrimethylammonium salt represented by formula (2): 
       R″N + (CH 3 ) 3 X −   (2) wherein R″ represents a linear or branched alkyl group having 8 to 20 carbons and X represents an atom or functional group which can form anion.    
   
   
       8 . The semiconductor device according to  claim 1  wherein said aprotic polar solvent has a dielectric constant of 20 or more.  
   
   
       9 . The semiconductor device according to  claim 1  wherein said aprotonic polar solvent is one or more selected from the group consisting of acetonitrile, propionitrile, isobutyronitrile, N-methylpyrrolidone, N, N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, hexamethylphosphortriamide, nitrobenzene and nitromethane.  
   
   
       10 . The semiconductor device according to  claim 1  wherein said porous film is between metal interconnections in a same layer of multi-level interconnects or between upper and lower metal interconnection layers.