Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Abstract

The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R 1 ) n Si(OR 2 ) 4-n , and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

1 . A composition for forming a porous film comprising: 
 an amorphous polymer solution which is obtained by hydrolyzing and condensing at least one silane compound expressed by formula (1):      (R 1 ) n Si(OR 2 ) 4-n   (1)    wherein R 1  represents a straight-chain or branched alkyl group or aryl group having 1 to 8 carbons, which can have a substituent, and when there is more than one R 1 , the R 1 s can be independent and the same as or different from each other; R 2  represents an alkyl group having 1 to 4 carbons, and when there is more than one R 2 , the R 2 s can be independent and the same as or different from each other; and n is an integer of 0 to 3; and    a zeolite sol which is formed by a method comprising hydrolyzing a silane compound in the presence of a quaternary ammonium hydroxide.    
     
     
         2 . The composition according to  claim 1 , wherein said zeolite sol is formed by a method comprising hydrolyzing said silane compound for forming said zeolite sol in the presence of a catalyst in addition to said quaternary ammonium hydroxide.  
     
     
         3 . The composition according to  claim 1 , wherein said zeolite sol is a zeolite sol having an average particle diameter of 3 nm to 500 nm.  
     
     
         4 . The composition according to  claim 1 , wherein said quaternary ammonium hydroxide is one or more compounds expressed by formula (3):  
         (R 4 ) 4 N + OH −   (3)  
       wherein R 4  represents a straight-chain or branched alkyl group having 1 to 20 carbons, and can be independent and the same as or different from each other.  
     
     
         5 . A method for forming a porous film comprising: 
 a coating step for coating the composition according to  claim 1;     a subsequent drying step; and    a heating step for zeolite structure growth.    
     
     
         6 . A porous film prepared by using the composition according to  claim 1 .  
     
     
         7 . An insulator film prepared by using the composition according to  claim 1 .  
     
     
         8 . A semiconductor device comprising a porous film inside which is prepared by using the composition of  claim 1 .  
     
     
         9 . The semiconductor device of  claim 8 , wherein said zeolite sol is formed by a method comprising hydrolyzing said silane compound for forming said zeolite sol in the presence of a catalyst in addition to said quaternary ammonium hydroxide.  
     
     
         10 . The semiconductor device of  claim 8 , wherein said zeolite sol is a zeolite sol having an average particle diameter of 3 nm to 500 nm.  
     
     
         11 . The semiconductor device of  claim 8 , wherein said quaternary ammonium hydroxide is one or more compounds expressed by formula (3):  
         (R 4 ) 4 N + OH −   (3)  
       wherein R 4  represents a straight-chain or branched alkyl group having 1 to 20 carbons, and can be independent and the same as or different from each other.