Inventor · disambiguated record
Ryan M. Martin
Also filed as: MARTIN RYAN M
6 granted patents·7 pending applications·52 citations·filing 2009–2017
78Inventor score
Top patents by PatentIndex Score
13 records- 0197US8937299B2III-V finFETs on silicon substrateIBM·Filed 2013·Granted Jan 20, 2015·40 cites·10 claims
- 0290US9018084B2Tapered fin field effect transistorIBM·Filed 2013·Granted Apr 28, 2015·9 cites·11 claims
- 0368US8232171B2Structure with isotropic silicon recess profile in nanoscale dimensionsENGELMANN SEBASTIAN ULRICH·Filed 2009·Granted Jul 31, 2012·2 cites·9 claims
- 0465US9929334B2Josephson junction with spacerIBM·Filed 2015·Granted Mar 27, 2018·1 cites·8 claims
- 0556US10170679B2Josephson junction with spacerIBM·Filed 2017·Granted Jan 1, 2019·0 cites·20 claims
- 0654US2015048423A1Semiconductor device having a iii-v crystalline compound material selectively grown on the bottom of a space formed in a single element substrate.IBM·Filed 2013·Application pending·0 cites
- 0754US2015048422A1A method for forming a crystalline compound iii-v material on a single element substrateIBM·Filed 2013·Application pending·0 cites
- 0851US2014306286A1Tapered fin field effect transistorIBM·Filed 2013·Application pending·0 cites
- 0949US2015255281A1Silicon substrate preparation for selective iii-v epitaxyIBM·Filed 2015·Application pending·0 cites
- 1048US2012193680A1Structure with isotropic silicon recess profile in nanoscale dimensionsENGELMANN SEBASTIAN ULRICH·Filed 2012·Application pending·0 cites
- 1148US2014264607A1Iii-v finfets on silicon substrateIBM·Filed 2013·Application pending·0 cites
- 1248US2012193715A1Structure with isotropic silicon recess profile in nanoscale dimensionsENGELMANN SEBASTIAN ULRICH·Filed 2012·Application pending·0 cites
- 1340US8449781B2Selective etch back process for carbon nanotubes intergrationDARNON MAXIME·Filed 2010·Granted May 28, 2013·0 cites·12 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →