Inventor · disambiguated record
Dae Geun Yang
Also filed as: YANG DAE G · YANG DAE GEUN
12 granted patents·6 pending applications·167 citations·filing 2012–2017
91Inventor score
Files withGLOBALFOUNDRIES INC18
Top patents by PatentIndex Score
18 records- 0198US8753940B1Methods of forming isolation structures and fins on a FinFET semiconductor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 17, 2014·72 cites·13 claims
- 0296US9159630B1Fin field-effect transistor (FinFET) device formed using a single spacer, double hardmask schemeGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 13, 2015·32 cites·20 claims
- 0393US9735154B2Semiconductor structure having gap fill dielectric layer disposed between finsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 15, 2017·9 cites·20 claims
- 0492US8697501B1Semiconductor device having a gate formed on a uniform surface and method for forming the sameGLOBALFOUNDRIES INC·Filed 2012·Granted Apr 15, 2014·17 cites·20 claims
- 0589US9105478B2Devices and methods of forming fins at tight fin pitchesGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·9 cites·10 claims
- 0687US9608086B2Metal gate structure and method of formationGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 28, 2017·8 cites·9 claims
- 0786US8936986B2Methods of forming finfet devices with a shared gate structureGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 20, 2015·8 cites·17 claims
- 0877US9196499B2Method of forming semiconductor finsGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 24, 2015·3 cites·20 claims
- 0977US8993445B2Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protectionGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 31, 2015·5 cites·20 claims
- 1071US8969205B2Double patterning via triangular shaped sidewall spacersGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 3, 2015·2 cites·16 claims
- 1168US9147696B2Devices and methods of forming finFETs with self aligned fin formationGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 29, 2015·2 cites·7 claims
- 1249US2017162688A1Metal gate structure and method of formationGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 1346US9034767B1Facilitating mask pattern formationGLOBALFOUNDRIES INC·Filed 2013·Granted May 19, 2015·0 cites·20 claims
- 1445US2015287595A1Devices and methods of forming fins at tight fin pitchesGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 1544US2015333067A1Devices and methods of forming finfets with self aligned fin formationGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 1643US2015270175A1Partially crystallized fin hard mask for fin field-effect-transistor (finfet) deviceGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1741US2015255353A1Forming source/drain regions with single reticle and resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1840US2014148011A1Method of forming semiconductor finsGLOBALFOUNDRIES INC·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →