Inventor · disambiguated record
Alexander A. Demkov
Also filed as: DEMKOV ALEXANDER · DEMKOV ALEXANDER A
11 granted patents·12 pending applications·111 citations·filing 1999–2024
88Inventor score
Top patents by PatentIndex Score
23 records- 0191US7091568B2Electronic device including dielectric layer, and a process for forming the electronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 15, 2006·59 cites·20 claims
- 0278US6791125B2Semiconductor device structures which utilize metal sulfidesFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 14, 2004·28 cites·29 claims
- 0360US11561421B2Systems and methods for integrating a-axis oriented barium titanate thin films on silicon (001) via strain controlUNIV TEXAS·Filed 2020·Granted Jan 24, 2023·0 cites·20 claims
- 0459US7141857B2Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 28, 2006·8 cites·11 claims
- 0556US6693033B2Method of removing an amorphous oxide from a monocrystalline surfaceMOTOROLA INC·Filed 2001·Granted Feb 17, 2004·6 cites·29 claims
- 0656US2025087484A1Gallium-Oxide-On-Silicon (GaOxS)UNIV TEXAS·Filed 2024·Application pending·0 cites
- 0753US7365410B2Semiconductor structure having a metallic buffer layer and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Apr 29, 2008·4 cites·6 claims
- 0851US9023662B2Efficiently injecting spin-polarized current into semiconductors by interfacing crystalline ferromagnetic oxides directly on the semiconductor materialDEMKOV ALEXANDER A·Filed 2012·Granted May 5, 2015·2 cites·16 claims
- 0946US2007218640A1Semiconductor device having a gate with a thin conductive layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 1044US2023132224A1Quantum-Confined Stark Effect Electro-Optic Modulator In Perovskite Quantum Wells Integrated On SiliconUNIV TEXAS·Filed 2021·Application pending·0 cites
- 1143US12471367B2Systems and techniques for forming silicon-on-oxide-on-silicon structuresUNIV TEXAS·Filed 2020·Granted Nov 11, 2025·0 cites·30 claims
- 1239US9293697B2Efficiently injecting spin-polarized current into semiconductors by interfacing crystalline ferromagnetic oxides directly on the semiconductor materialUNIV TEXAS·Filed 2015·Granted Mar 22, 2016·0 cites·14 claims
- 1339US7235847B2Semiconductor device having a gate with a thin conductive layerFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 26, 2007·0 cites·25 claims
- 1436US2003027409A1Germanium semiconductor structure, integrated circuit, and process for fabricating the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1535US2003034500A1Semiconductor structure including a zintl material buffer layer, device including the structure, and method of forming the structure and deviceMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1635US2003020104A1Increased efficiency semiconductor devices including intermetallic layerMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1735US2003001207A1Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant subtrate for materials used to form the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1835US2003015711A1Structure and method for fabricating semiconductor structures and devices utilizing the formation of a complaint substrate with an intermetallic layerMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1934US6479173B1Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with siliconMOTOROLA INC·Filed 1999·Granted Nov 12, 2002·4 cites·53 claims
- 2034US2003022520A1Light-assisted deposition method for fabricating a compliant substrate for epitaxial growth of monocrystalline materialsMOTOROLA INC·Filed 2001·Application pending·0 cites
- 2134US2003122130A1Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate having a mechanical decoupling layerMOTOROLA INC·Filed 2001·Application pending·0 cites
- 2233US2003038299A1Semiconductor structure including a compliant substrate having a decoupling layer, device including the compliant substrate, and method to form the structure and deviceMOTOROLA INC·Filed 2001·Application pending·0 cites
- 2331US2004164315A1Structure and device including a tunneling piezoelectric switch and method of forming sameMOTOROLA INC·Filed 2003·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Alexander A. Demkov files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →