Semiconductor structure including a zintl material buffer layer, device including the structure, and method of forming the structure and device

Abstract

High quality epitaxial layers of monocrystalline materials ( 106 ) can be grown overlying monocrystalline substrates ( 102 ) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating Zintl buffer layer ( 104 ) on a silicon wafer. Any lattice mismatch between the monocrystalline layer ( 106 ) and the underlying silicon substrate ( 102 ) is absorbed by the Zintl interface layer ( 104 ).

We claim:  
     
         1 . A semiconductor structure comprising: 
 a monocrystalline silicon substrate;    a Zintl material overlying and in contact with at least a portion of the monocrystalline silicon substrate; and    a monocrystalline compound semiconductor material overlying the Zintl material.    
     
     
         2 . The semiconductor structure of  claim 1 , wherein the Zintl material comprises an alkaline earth metal.  
     
     
         3 . The semiconductor structure of  claim 2 , wherein the alkaline earth metal comprises strontium.  
     
     
         4 . The semiconductor structure of  claim 3 , wherein strontium is about one half to about 2 monolayers thick.  
     
     
         5 . The semiconductor structure of  claim 1 , wherein the Zintl material comprises a Group III metal.  
     
     
         6 . The semiconductor structure of  claim 5 , wherein the Group III metal comprises aluminum.  
     
     
         7 . The semiconductor structure of  claim 1 , wherein the Zintl material comprises strontium aluminide.  
     
     
         8 . The semiconductor structure of  claim 1 , wherein the Zintl material comprises a plurality of layers, each of the plurality of layers comprising an electropositive element and an electronegative element.  
     
     
         9 . The semiconductor structure of  claim 1 , wherein the monocrystalline compound semiconductor material comprises GaAs.  
     
     
         10 . The semiconductor structure of  claim 1 , further comprising a first electronic device formed using the monocrystalline compound semiconductor material.  
     
     
         11 . The semiconductor structure of  claim 10 , firther comprising a second electronic device formed using the monocrystalline silicon substrate, the second electronic device coupled to the first electronic device.  
     
     
         12 . A process for fabricating a semiconductor structure comprising: 
 providing a monocrystalline silicon substrate;    depositing a Zintl buffer layer material overlying and in contact with at least a portion of the monocrystalline silicon substrate; and    epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film.    
     
     
         13 . The process of  claim 12 , further comprising the step of removing silicon oxide from the surface of the monocrystalline silicon substrate.  
     
     
         14 . The process of  claim 13 , wherein the step of depositing a Zintl buffer layer material comprises: 
 depositing about one half to about two monolayers of strontium onto the surface of the monocrystalline silicon substrate; and    depositing aluminum onto the strontium to form Al x Sr, where x ranges from about 2 to about 4.    
     
     
         15 . The process of  claim 12 , wherein the step of depositing a Zintl buffer layer material comprises forming a layer of strontium aluminide.  
     
     
         16 . The process of  claim 12 , wherein the step of epitaxially forming a monocrystalline compound semiconductor layer comprises growing a layer of GaAs.  
     
     
         17 . The process of  claim 12 , further comprising the step of exposing the Zintl buffer layer material to a Group V material to form a template for subsequent monocrystalline material growth.  
     
     
         18 . The process of  claim 12 , further comprising the step of forming an electronic device using the monocrystalline compound semiconductor layer.  
     
     
         19 . The process of  claim 12 , further comprising the step of forming an electronic device using the monocrystalline silicon substrate.  
     
     
         20 . The process of  claim 12 , further comprising the step of forming a plurality of layers of Zintl buffer layer material.  
     
     
         21 . A semiconductor structure comprising: 
 a monocrystalline silicon substrate;    a Zintl material comprising strontium and aluminum overlying and in contact with at least a portion of the monocrystalline silicon substrate; and    a monocrystalline GaAs layer overlying the Zintl material.