Inventor · disambiguated record
Siyuranga O. Koswatta
Also filed as: KOSWATTA SIYURANGA · KOSWATTA SIYURANGA O
26 granted patents·3 pending applications·92 citations·filing 2011–2023
95Inventor score
Top patents by PatentIndex Score
29 records- 0194US9000499B2Gate-all-around carbon nanotube transistor with selectively doped spacersIBM·Filed 2013·Granted Apr 7, 2015·13 cites·20 claims
- 0293US8609481B1Gate-all-around carbon nanotube transistor with selectively doped spacersIBM·Filed 2012·Granted Dec 17, 2013·26 cites·20 claims
- 0389US10374041B2Field effect transistor with controllable resistanceIBM·Filed 2017·Granted Aug 6, 2019·4 cites·7 claims
- 0489US10224429B2Precise junction placement in vertical semiconductor devices using etch stop layersIBM·Filed 2017·Granted Mar 5, 2019·4 cites·20 claims
- 0588US9773717B1Integrated circuits with peltier cooling provided by back-end wiringGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 26, 2017·6 cites·18 claims
- 0687US10295589B2Electromigration wearout detection circuitsIBM·Filed 2016·Granted May 21, 2019·3 cites·20 claims
- 0786US9954101B2Precise junction placement in vertical semiconductor devices using etch stop layersIBM·Filed 2016·Granted Apr 24, 2018·3 cites·11 claims
- 0885US10103083B2Integrated circuits with Peltier cooling provided by back-end wiringGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 16, 2018·4 cites·20 claims
- 0984US10586849B2Field effect transistor with controllable resistanceIBM·Filed 2019·Granted Mar 10, 2020·2 cites·3 claims
- 1083US9614107B2Quantum capacitance graphene varactors and fabrication methodsIBM·Filed 2015·Granted Apr 4, 2017·2 cites·11 claims
- 1182US12015056B2Field effect transistor with controllable resistanceIBM·Filed 2023·Granted Jun 18, 2024·0 cites·10 claims
- 1282US8796733B2Low voltage tunnel field-effect transistor (TFET) and method of making sameSEABAUGH ALAN C·Filed 2011·Granted Aug 5, 2014·14 cites·16 claims
- 1381US11177349B2Field effect transistor with controllable resistanceIBM·Filed 2020·Granted Nov 16, 2021·1 cites·10 claims
- 1480US11222259B2Counter based resistive processing unit for programmable and reconfigurable artificial-neural-networksIBM·Filed 2017·Granted Jan 11, 2022·3 cites·15 claims
- 1580US10191108B2On-chip sensor for monitoring active circuits on integrated circuit (IC) chipsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 29, 2019·2 cites·20 claims
- 1678US12423568B2Counter based resistive processing unit for programmable and reconfigurable artificial-neural-networksIBM·Filed 2023·Granted Sep 23, 2025·0 cites·8 claims
- 1778US11088278B2Precise junction placement in vertical semiconductor devices using etch stop layersIBM·Filed 2019·Granted Aug 10, 2021·1 cites·20 claims
- 1878US9893212B2Quantum capacitance graphene varactors and fabrication methodsCHEN ZHIHONG·Filed 2011·Granted Feb 13, 2018·2 cites·10 claims
- 1975US11855149B2Field effect transistor with controllable resistanceIBM·Filed 2021·Granted Dec 26, 2023·0 cites·7 claims
- 2072US11875249B2Counter based resistive processing unit for programmable and reconfigurable artificial-neural-networksIBM·Filed 2021·Granted Jan 16, 2024·0 cites·12 claims
- 2166US11024750B2Quantum capacitance graphene varactors and fabrication methodsIBM·Filed 2019·Granted Jun 1, 2021·0 cites·17 claims
- 2265US10636917B2Quantum capacitance graphene varactors and fabrication methodsIBM·Filed 2017·Granted Apr 28, 2020·0 cites·13 claims
- 2364US9552455B2Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specificationsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 24, 2017·1 cites·15 claims
- 2461US10249754B2Precise junction placement in vertical semiconductor devices using etch stop layersIBM·Filed 2018·Granted Apr 2, 2019·0 cites·20 claims
- 2561US9906213B2Reducing thermal runaway in inverter devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 27, 2018·1 cites·20 claims
- 2649US2014306290A1Dual Silicide Process Compatible with Replacement-Metal-GateIBM·Filed 2013·Application pending·0 cites
- 2749US2014306291A1Dual Silicide Process Compatible with Replacement-Metal-GateIBM·Filed 2013·Application pending·0 cites
- 2843US8802535B2Doped core trigate FET structure and methodBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 12, 2014·0 cites·28 claims
- 2940US2014210011A1Dual Silicide ProcessIBM·Filed 2013·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Siyuranga O. Koswatta files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →