Assignee
BANGSARUNTIP SARUNYA
US·47 granted patents·2 pending applications·455 citations·filing 2009–2012
Top patents by PatentIndex Score
49 records- 0197US8936972B2Epitaxially thickened doped or undoped core nanowire FET structure and method for increasing effective device widthBANGSARUNTIP SARUNYA·Filed 2012·Granted Jan 20, 2015·29 cites·22 claims
- 0297US8809131B2Replacement gate fin first wire last gate all around devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 19, 2014·35 cites·26 claims
- 0397US8580624B2Nanowire FET and finFET hybrid technologyBANGSARUNTIP SARUNYA·Filed 2011·Granted Nov 12, 2013·36 cites·21 claims
- 0496US8441043B2Maskless process for suspending and thinning nanowiresBANGSARUNTIP SARUNYA·Filed 2011·Granted May 14, 2013·23 cites·8 claims
- 0596US8324940B2Nanowire circuits in matched devicesBANGSARUNTIP SARUNYA·Filed 2010·Granted Dec 4, 2012·18 cites·11 claims
- 0695US9029834B2Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectricBANGSARUNTIP SARUNYA·Filed 2010·Granted May 12, 2015·22 cites·20 claims
- 0795US8541774B2Hybrid CMOS technology with nanowire devices and double gated planar devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Sep 24, 2013·18 cites·12 claims
- 0895US8173993B2Gate-all-around nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted May 8, 2012·35 cites·27 claims
- 0995US8097515B2Self-aligned contacts for nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted Jan 17, 2012·36 cites·16 claims
- 1094US8420455B2Generation of multiple diameter nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Apr 16, 2013·17 cites·22 claims
- 1194US8324030B2Nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Dec 4, 2012·17 cites·14 claims
- 1292US8455334B2Planar and nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted Jun 4, 2013·19 cites·20 claims
- 1390US8586966B2Contacts for nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Nov 19, 2013·19 cites·10 claims
- 1488US8143113B2Omega shaped nanowire tunnel field effect transistors fabricationBANGSARUNTIP SARUNYA·Filed 2009·Granted Mar 27, 2012·10 cites·20 claims
- 1588US8129247B2Omega shaped nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted Mar 6, 2012·12 cites·28 claims
- 1686US8716072B2Hybrid CMOS technology with nanowire devices and double gated planar devicesBANGSARUNTIP SARUNYA·Filed 2011·Granted May 6, 2014·7 cites·10 claims
- 1785US8921825B2Nanowire field effect transistor deviceBANGSARUNTIP SARUNYA·Filed 2012·Granted Dec 30, 2014·6 cites·3 claims
- 1885US8564025B2Nanowire FET having induced radial strainBANGSARUNTIP SARUNYA·Filed 2012·Granted Oct 22, 2013·6 cites·20 claims
- 1985US8241971B2MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gateBANGSARUNTIP SARUNYA·Filed 2009·Granted Aug 14, 2012·8 cites·8 claims
- 2084US8685823B2Nanowire field effect transistor deviceBANGSARUNTIP SARUNYA·Filed 2011·Granted Apr 1, 2014·6 cites·6 claims
- 2184US8648330B2Nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Feb 11, 2014·4 cites·6 claims
- 2284US8558219B2Nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Oct 15, 2013·4 cites·19 claims
- 2384US8519479B2Generation of multiple diameter nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Aug 27, 2013·5 cites·4 claims
- 2483US8722492B2Nanowire pin tunnel field effect devicesBANGSARUNTIP SARUNYA·Filed 2010·Granted May 13, 2014·6 cites·18 claims
- 2582US8614434B2MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gateBANGSARUNTIP SARUNYA·Filed 2012·Granted Dec 24, 2013·4 cites·14 claims
- 2682US8536563B2Nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Sep 17, 2013·5 cites·3 claims
- 2782US8513068B2Nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 20, 2013·5 cites·13 claims
- 2882US8445337B2Generation of multiple diameter nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted May 21, 2013·5 cites·18 claims
- 2981US8263477B2Structure for use in fabrication of PiN heterojunction TFETBANGSARUNTIP SARUNYA·Filed 2010·Granted Sep 11, 2012·5 cites·15 claims
- 3079US8313990B2Nanowire FET having induced radial strainBANGSARUNTIP SARUNYA·Filed 2009·Granted Nov 20, 2012·6 cites·10 claims
- 3179US8309991B2Nanowire FET having induced radial strainBANGSARUNTIP SARUNYA·Filed 2009·Granted Nov 13, 2012·7 cites·22 claims
- 3276US9184301B2Planar and nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Nov 10, 2015·3 cites·5 claims
- 3375US8520430B2Nanowire circuits in matched devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 27, 2013·3 cites·20 claims
- 3470US8723162B2Nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted May 13, 2014·2 cites·20 claims
- 3570US8680510B2Method of forming compound semiconductorBANGSARUNTIP SARUNYA·Filed 2010·Granted Mar 25, 2014·2 cites·24 claims
- 3668US9343142B2Nanowire floating gate transistorBANGSARUNTIP SARUNYA·Filed 2012·Granted May 17, 2016·2 cites·20 claims
- 3768US8247904B2Interconnection between sublithographic-pitched structures and lithographic-pitched structuresBANGSARUNTIP SARUNYA·Filed 2009·Granted Aug 21, 2012·3 cites·26 claims
- 3867US8507892B2Omega shaped nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 13, 2013·1 cites·7 claims
- 3966US9728619B2Generation of multiple diameter nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 8, 2017·1 cites·3 claims
- 4064US8835231B2Methods of forming contacts for nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Sep 16, 2014·3 cites·20 claims
- 4153US8673698B2Generation of multiple diameter nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Mar 18, 2014·0 cites·17 claims
- 4253US8524544B2MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gateBANGSARUNTIP SARUNYA·Filed 2012·Granted Sep 3, 2013·0 cites·16 claims
- 4351US8772755B2Directionally etched nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Jul 8, 2014·0 cites·4 claims
- 4450US2014034905A1Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure and Method for Increasing Effective Device WidthBANGSARUNTIP SARUNYA·Filed 2012·Application pending·0 cites
- 4549US2012298963A1Structure for use in fabrication of pin heterojunction tfetBANGSARUNTIP SARUNYA·Filed 2012·Application pending·0 cites
- 4648US8680589B2Omega shaped nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Mar 25, 2014·0 cites·18 claims
- 4745US9105482B2Nanowire PIN tunnel field effect devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 11, 2015·0 cites·20 claims
- 4843US8946680B2TFET with nanowire sourceBANGSARUNTIP SARUNYA·Filed 2012·Granted Feb 3, 2015·0 cites·9 claims
- 4943US8802535B2Doped core trigate FET structure and methodBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 12, 2014·0 cites·28 claims
Join the waitlist — get patent alerts
Get an alert when BANGSARUNTIP SARUNYA files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →