Inventor · disambiguated record
Michelle L. Steen
Also filed as: STEEN MICHELLE L · STEEN MICHELLE LEIGH
21 granted patents·8 pending applications·465 citations·filing 2003–2010
96Inventor score
Top patents by PatentIndex Score
29 records- 0197US7276787B2Silicon chip carrier with conductive through-vias and method for fabricating sameIBM·Filed 2003·Granted Oct 2, 2007·124 cites·8 claims
- 0296US7485891B2Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memoryIBM·Filed 2003·Granted Feb 3, 2009·125 cites·10 claims
- 0395US7696036B2CMOS transistors with differential oxygen content high-k dielectricsIBM·Filed 2007·Granted Apr 13, 2010·33 cites·7 claims
- 0493US8035173B2CMOS transistors with differential oxygen content high-K dielectricsIBM·Filed 2010·Granted Oct 11, 2011·14 cites·12 claims
- 0592US7569466B2Dual metal gate self-aligned integrationIBM·Filed 2005·Granted Aug 4, 2009·19 cites·10 claims
- 0686US7872317B2Dual metal gate self-aligned integrationIBM·Filed 2009·Granted Jan 18, 2011·10 cites·11 claims
- 0786US7282148B2Porous silicon composite structure as large filtration arrayIBM·Filed 2003·Granted Oct 16, 2007·32 cites·12 claims
- 0885US8383483B2High performance CMOS circuits, and methods for fabricating sameIBM·Filed 2009·Granted Feb 26, 2013·10 cites·15 claims
- 0983US7273777B2Formation of fully silicided (FUSI) gate using a dual silicide processIBM·Filed 2005·Granted Sep 25, 2007·9 cites·15 claims
- 1083US7060624B2Deep filled viasIBM·Filed 2003·Granted Jun 13, 2006·28 cites·16 claims
- 1179US7271455B2Formation of fully silicided metal gate using dual self-aligned silicide processIBM·Filed 2004·Granted Sep 18, 2007·20 cites·9 claims
- 1276US7919379B2Dielectric spacer removalIBM·Filed 2007·Granted Apr 5, 2011·5 cites·14 claims
- 1369US7833849B2Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrodeIBM·Filed 2005·Granted Nov 16, 2010·4 cites·18 claims
- 1469US7785999B2Formation of fully silicided metal gate using dual self-aligned silicide processIBM·Filed 2007·Granted Aug 31, 2010·3 cites·11 claims
- 1568US7473975B2Fully silicided metal gate semiconductor device structureIBM·Filed 2007·Granted Jan 6, 2009·3 cites·14 claims
- 1664US8080876B2Structure and method for creating reliable deep via connections in a silicon carrierANDRY PAUL S·Filed 2008·Granted Dec 20, 2011·2 cites·9 claims
- 1763US7014959B2CD uniformity of chrome etch to photomask processIBM·Filed 2003·Granted Mar 21, 2006·8 cites·27 claims
- 1863US6815813B1Self-contained heat sink and a method for fabricating sameIBM·Filed 2003·Granted Nov 9, 2004·10 cites·13 claims
- 1953US2008083697A1Porous silicon composite structure as large filtration arrayDALTON TIMOTHY J·Filed 2007·Application pending·0 cites
- 2052US8178433B2Methods for the formation of fully silicided metal gatesBIERY GLENN A·Filed 2008·Granted May 15, 2012·1 cites·12 claims
- 2150US7014958B2Method for dry etching photomask materialIBM·Filed 2003·Granted Mar 21, 2006·2 cites·22 claims
- 2249US7705405B2Methods for the formation of fully silicided metal gatesIBM·Filed 2004·Granted Apr 27, 2010·3 cites·7 claims
- 2348US2008179755A1Structure and method for creating reliable deep via connections in a silicon carrierIBM·Filed 2007·Application pending·0 cites
- 2448US2009298244A1Mobility Enhanced FET DevicesIBM·Filed 2009·Application pending·0 cites
- 2546US2006027934A1Silicon chip carrier with conductive through-vias and method for fabricating sameIBM·Filed 2005·Application pending·0 cites
- 2645US2007152276A1High performance CMOS circuits, and methods for fabricating the sameIBM·Filed 2005·Application pending·0 cites
- 2744US2008217700A1Mobility Enhanced FET DevicesDORIS BRUCE B·Filed 2007·Application pending·0 cites
- 2841US2008277726A1Devices with Metal Gate, High-k Dielectric, and Butted ElectrodesDORIS BRUCE B·Filed 2007·Application pending·0 cites
- 2941US2009039436A1High Performance Metal Gate CMOS with High-K Gate DielectricDORIS BRUCE B·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →