Inventor · disambiguated record
Paul C. Parries
Also filed as: PARRIES PAUL · PARRIES PAUL C · PARRIES PAUL CHRISTIAN
57 granted patents·9 pending applications·669 citations·filing 1987–2015
99Inventor score
Top patents by PatentIndex Score
66 records- 0196US8395217B1Isolation in CMOSFET devices utilizing buried air bagsCHENG KANGGUO·Filed 2011·Granted Mar 12, 2013·33 cites·18 claims
- 0291US7888723B2Deep trench capacitor in a SOI substrate having a laterally protruding buried strapIBM·Filed 2008·Granted Feb 15, 2011·17 cites·25 claims
- 0391US4873205AMethod for providing silicide bridge contact between silicon regions separated by a thin dielectricIBM·Filed 1988·Granted Oct 10, 1989·111 cites·17 claims
- 0490US8236632B2FET structures with trench implantation to improve back channel leakage and body resistanceFRIED DAVID M·Filed 2010·Granted Aug 7, 2012·10 cites·24 claims
- 0586US9311443B2Correcting for stress induced pattern shifts in semiconductor manufacturingGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·8 cites·21 claims
- 0685US9136321B1Low energy ion implantation of a junction butting regionIBM·Filed 2014·Granted Sep 15, 2015·6 cites·12 claims
- 0785US8809953B2FET structures with trench implantation to improve back channel leakage and body resistanceFRIED DAVID M·Filed 2012·Granted Aug 19, 2014·6 cites·20 claims
- 0885US8273629B2Through-gate implant for body dopantWANG GENG·Filed 2010·Granted Sep 25, 2012·8 cites·9 claims
- 0983US8723243B2Polysilicon/metal contact resistance in deep trenchIBM·Filed 2013·Granted May 13, 2014·5 cites·16 claims
- 1083US7923815B2DRAM having deep trench capacitors with lightly doped buried platesIBM·Filed 2008·Granted Apr 12, 2011·10 cites·11 claims
- 1183US7705386B2Providing isolation for wordline passing over deep trench capacitorIBM·Filed 2008·Granted Apr 27, 2010·7 cites·20 claims
- 1283US6967885B2Concurrent refresh mode with distributed row address counters in an embedded DRAMIBM·Filed 2004·Granted Nov 22, 2005·33 cites·16 claims
- 1381US8901706B2Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenchesCHUDZIK MICHAEL P·Filed 2012·Granted Dec 2, 2014·4 cites·14 claims
- 1480US8652925B2Method of fabricating isolated capacitors and structure thereofKWON OH-JUNG·Filed 2010·Granted Feb 18, 2014·4 cites·19 claims
- 1580US7193262B2Low-cost deep trench decoupling capacitor device and process of manufactureIBM·Filed 2004·Granted Mar 20, 2007·26 cites·16 claims
- 1680US5466636AMethod of forming borderless contacts using a removable mandrelIBM·Filed 1992·Granted Nov 14, 1995·63 cites·24 claims
- 1778US8716776B2Method of fabricating isolated capacitors and structure thereofKWON OH-JUNG·Filed 2012·Granted May 6, 2014·3 cites·5 claims
- 1878US7791124B2SOI deep trench capacitor employing a non-conformal inner spacerIBM·Filed 2008·Granted Sep 7, 2010·7 cites·8 claims
- 1977US7382672B2Differential and hierarchical sensing for memory circuitsIBM·Filed 2007·Granted Jun 3, 2008·8 cites·1 claims
- 2073US5401675AMethod of depositing conductors in high aspect ratio apertures using a collimatorFiled 1993·Granted Mar 28, 1995·49 cites·12 claims
- 2169US8637958B2Structure and method for forming isolation and buried plate for trench capacitorDUBE ABHISHEK·Filed 2012·Granted Jan 28, 2014·2 cites·11 claims
- 2269US6294449B1Self-aligned contact for closely spaced transistorsIBM·Filed 1999·Granted Sep 25, 2001·37 cites·6 claims
- 2368US8298908B2Structure and method for forming isolation and buried plate for trench capacitorDUBE ABHISHEK·Filed 2010·Granted Oct 30, 2012·2 cites·14 claims
- 2468US6410399B1Process to lower strap, wordline and bitline contact resistance in trench-based DRAMS by silicidizationIBM·Filed 2000·Granted Jun 25, 2002·15 cites·17 claims
- 2567US8198169B2Deep trench capacitor in a SOI substrate having a laterally protruding buried strapBRODSKY MARYJANE·Filed 2010·Granted Jun 12, 2012·2 cites·12 claims
- 2667US7078756B2Collarless trench DRAM deviceIBM·Filed 2004·Granted Jul 18, 2006·12 cites·20 claims
- 2767US4799990AMethod of self-aligning a trench isolation structure to an implanted well regionIBM·Filed 1987·Granted Jan 24, 1989·32 cites·11 claims
- 2866US8536649B2Method to reduce threshold voltage variability with through gate well implantWANG GENG·Filed 2012·Granted Sep 17, 2013·1 cites·20 claims
- 2966US7023758B2Low power manager for standby operation of a memory systemIBM·Filed 2005·Granted Apr 4, 2006·5 cites·20 claims
- 3066US5793075ADeep trench cell capacitor with inverting counter electrodeIBM·Filed 1996·Granted Aug 11, 1998·18 cites·29 claims
- 3165US8652933B2Semiconductor structure having wide and narrow deep trenches with different materialsPARRIES PAUL C·Filed 2010·Granted Feb 18, 2014·3 cites·25 claims
- 3265US7286385B2Differential and hierarchical sensing for memory circuitsIBM·Filed 2005·Granted Oct 23, 2007·4 cites·16 claims
- 3362US7046572B2Low power manager for standby operation of memory systemIBM·Filed 2003·Granted May 16, 2006·10 cites·9 claims
- 3461US7564729B2Differential and hierarchical sensing for memory circuitsIBM·Filed 2008·Granted Jul 21, 2009·3 cites·12 claims
- 3560US9240482B2Asymmetric stressor DRAMGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 19, 2016·1 cites·20 claims
- 3658US9087927B2Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenchesIBM·Filed 2014·Granted Jul 21, 2015·0 cites·18 claims
- 3758US8963283B2Method of fabricating isolated capacitors and structure thereofIBM·Filed 2014·Granted Feb 24, 2015·0 cites·12 claims
- 3857US8940617B2Method of fabricating isolated capacitors and structure thereofIBM·Filed 2013·Granted Jan 27, 2015·0 cites·16 claims
- 3957US8642423B2Polysilicon/metal contact resistance in deep trenchMESSENGER BRIAN W·Filed 2011·Granted Feb 4, 2014·1 cites·18 claims
- 4056US7194670B2Command multiplier for built-in-self-testIBM·Filed 2004·Granted Mar 20, 2007·9 cites·8 claims
- 4154US7057866B2System and method for disconnecting a portion of an integrated circuitIBM·Filed 2001·Granted Jun 6, 2006·8 cites·15 claims
- 4254US6265278B1Deep trench cell capacitor with inverting counter electrodeIBM·Filed 1998·Granted Jul 24, 2001·10 cites·18 claims
- 4353US8741780B2Reduced corner leakage in SOI structure and methodIBM·Filed 2013·Granted Jun 3, 2014·0 cites·4 claims
- 4453US5453400AMethod and structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuitsIBM·Filed 1993·Granted Sep 26, 1995·20 cites·20 claims
- 4551US2015037941A1Finfet contacting a conductive strap structure of a dramIBM·Filed 2014·Application pending·0 cites
- 4648US8835994B2Reduced corner leakage in SOI structure and methodERVIN JOSEPH·Filed 2010·Granted Sep 16, 2014·0 cites·17 claims
- 4748US2015348974A1Low energy ion implantation of a junction butting regionGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 4847US8298884B2Method to reduce threshold voltage variability with through gate well implantWANG GENG·Filed 2010·Granted Oct 30, 2012·0 cites·10 claims
- 4947US6518145B1Methods to control the threshold voltage of a deep trench corner deviceIBM·Filed 1998·Granted Feb 11, 2003·10 cites·10 claims
- 5047US2013320422A1Finfet contacting a conductive strap structure of a dramCHANG JOSEPHINE B·Filed 2012·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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