Inventor · disambiguated record
Te-Hsun Hsu
Also filed as: HSU TE-HSUN
24 granted patents·8 pending applications·192 citations·filing 2004–2024
95Inventor score
Files withEMEMORY TECHNOLOGY INC14TAIWAN SEMICONDUCTOR MFG8HSU TE-HSUN3IPCELL CORPORATION LTD3CHEN WEI-REN2
Top patents by PatentIndex Score
32 records- 0197US8592886B2Erasable programmable single-ploy nonvolatile memoryHSU TE-HSUN·Filed 2012·Granted Nov 26, 2013·58 cites·26 claims
- 0295US8941167B2Erasable programmable single-ploy nonvolatile memoryCHEN WEI-REN·Filed 2012·Granted Jan 27, 2015·30 cites·20 claims
- 0391US7326994B2Logic compatible non-volatile memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 5, 2008·17 cites·19 claims
- 0489US7663916B2Logic compatible arrays and operationsTAIWAN SEMICONDCUTOR MFG COMPA·Filed 2007·Granted Feb 16, 2010·22 cites·17 claims
- 0585US8958245B2Logic-based multiple time programming memory cell compatible with generic CMOS processesHSU TE-HSUN·Filed 2012·Granted Feb 17, 2015·9 cites·30 claims
- 0683US7968926B2Logic non-volatile memory cell with improved data retention abilityTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 28, 2011·15 cites·19 claims
- 0782US9508447B2Non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2015·Granted Nov 29, 2016·3 cites·14 claims
- 0880US9640262B2Highly scalable single-poly non-volatile memory cellEMEMORY TECHNOLOGY INC·Filed 2015·Granted May 2, 2017·3 cites·12 claims
- 0979US9099392B2Method of fabricating erasable programmable single-poly nonvolatile memoryEMEMORY TECHNOLOGY INC·Filed 2013·Granted Aug 4, 2015·4 cites·3 claims
- 1078US8658495B2Method of fabricating erasable programmable single-poly nonvolatile memoryHSU TE-HSUN·Filed 2012·Granted Feb 25, 2014·4 cites·9 claims
- 1177US9018691B2Nonvolatile memory structure and fabrication method thereofEMEMORY TECHNOLOGY INC·Filed 2013·Granted Apr 28, 2015·4 cites·27 claims
- 1274US9391083B2Nonvolatile memory structureEMEMORY TECHNOLOGY INC·Filed 2014·Granted Jul 12, 2016·3 cites·25 claims
- 1370US7880217B2Programmable non-volatile memory (PNVM) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 1, 2011·4 cites·19 claims
- 1469US11569252B2Method for manufacturing semiconductor structure and capable of controlling thicknesses of dielectric layersEMEMORY TECHNOLOGY INC·Filed 2020·Granted Jan 31, 2023·0 cites·12 claims
- 1569US8787092B2Programming inhibit method of nonvolatile memory apparatus for reducing leakage currentCHEN WEI-REN·Filed 2012·Granted Jul 22, 2014·4 cites·6 claims
- 1669US7514740B2Logic compatible storage deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 7, 2009·7 cites·16 claims
- 1768US2023047939A1Fuse-type one time programming memory cellEMEMORY TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 1865US9147690B2Erasable programmable single-ploy nonvolatile memoryEMEMORY TECHNOLOGY INC·Filed 2013·Granted Sep 29, 2015·3 cites·18 claims
- 1962US2025246253A1Memory device, integrated circuit and operating method of memory deviceIPCELL CORPORATION LTD·Filed 2024·Application pending·0 cites
- 2053US2022367651A1Stacked-gate non-volatile memory cellEMEMORY TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2152US12439591B2Memory device, integrated circuit and manufacturing method of the sameIPCELL CORPORATION LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 2252US2024357808A1Memory device and manufacturing method of the sameIPCELL CORPORATION LTD·Filed 2024·Application pending·0 cites
- 2351US2007181936A1Novel architecture to monitor isolation integrity between floating gate and source lineTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 2450US2015194434A1Memory device and methods of forming memory device and semiconductor deviceEMEMORY TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 2549US7226828B2Architecture to monitor isolation integrity between floating gate and source lineTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jun 5, 2007·2 cites·14 claims
- 2649US2014242763A1Method for fabricating nonvolatile memory structureEMEMORY TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 2747US2015243669A1Memory deviceEMEMORY TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 2842US8779520B2Erasable programmable single-ploy nonvolatile memoryEMEMORY TECHNOLOGY INC·Filed 2013·Granted Jul 15, 2014·0 cites·13 claims
- 2942US8384149B2Memory cell having a shared programming gateTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 26, 2013·0 cites·12 claims
- 3037US7608884B2Scalable split-gate flash memory cell with high source-coupling ratioTAIWAN SEMICONDUCTOR MANUFACTR·Filed 2005·Granted Oct 27, 2009·0 cites·19 claims
- 3137US7335941B2Uniform channel programmable erasable flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 26, 2008·0 cites·20 claims
- 3235US10192875B2Non-volatile memory with protective stress gateEMEMORY TECHNOLOGY INC·Filed 2016·Granted Jan 29, 2019·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →