Inventor · disambiguated record
Ying Zhang
Also filed as: ZHANG YING · Zhang ying di
167 granted patents·30 pending applications·3,047 citations·filing 1994–2023
99Inventor score
Top patents by PatentIndex Score
197 records- 0199US8853025B2FinFET/tri-gate channel doping for multiple threshold voltage tuningTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 7, 2014·507 cites·20 claims
- 0298US9583369B2Ion assisted deposition for rare-earth oxide based coatings on lids and nozzlesAPPLIED MATERIALS INC·Filed 2013·Granted Feb 28, 2017·46 cites·11 claims
- 0398US9478433B1Cyclic spacer etching process with improved profile controlAPPLIED MATERIALS INC·Filed 2015·Granted Oct 25, 2016·109 cites·20 claims
- 0498US8440523B1Micromechanical device and methods to fabricate same using hard mask resistant to structure release etchGUILLORN MICHAEL A·Filed 2011·Granted May 14, 2013·143 cites·16 claims
- 0598US6864041B2Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etchingIBM·Filed 2001·Granted Mar 8, 2005·538 cites·12 claims
- 0697US12195839B2Ion beam sputtering with ion assisted deposition for coatings on chamber componentsAPPLIED MATERIALS INC·Filed 2023·Granted Jan 14, 2025·1 cites·20 claims
- 0797US9725799B2Ion beam sputtering with ion assisted deposition for coatings on chamber componentsAPPLIED MATERIALS INC·Filed 2014·Granted Aug 8, 2017·15 cites·15 claims
- 0897US9711334B2Ion assisted deposition for rare-earth oxide based thin film coatings on process ringsAPPLIED MATERIALS INC·Filed 2013·Granted Jul 18, 2017·16 cites·13 claims
- 0997US8178382B2Suspended germanium photodetector for silicon waveguideASSEFA SOLOMON·Filed 2011·Granted May 15, 2012·37 cites·7 claims
- 1096US9869012B2Ion assisted deposition for rare-earth oxide based coatingsAPPLIED MATERIALS INC·Filed 2017·Granted Jan 16, 2018·9 cites·20 claims
- 1196US9209279B1Self aligned replacement fin formationAPPLIED MATERIALS INC·Filed 2014·Granted Dec 8, 2015·20 cites·11 claims
- 1296US5798016AApparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stabilityIBM·Filed 1994·Granted Aug 25, 1998·219 cites·25 claims
- 1395US10453684B1Method for patterning a material layer with desired dimensionsAPPLIED MATERIALS INC·Filed 2018·Granted Oct 22, 2019·11 cites·20 claims
- 1495US7902620B2Suspended germanium photodetector for silicon waveguideIBM·Filed 2008·Granted Mar 8, 2011·24 cites·13 claims
- 1595US7435671B2Trilayer resist scheme for gate etching applicationsIBM·Filed 2006·Granted Oct 14, 2008·24 cites·14 claims
- 1694US10510540B2Mask scheme for cut pattern flow with enlarged EPE windowMICROMATERIALS LLC·Filed 2018·Granted Dec 17, 2019·11 cites·20 claims
- 1794US8263446B2Asymmetric FinFET devicesCHENG KANGGUO·Filed 2010·Granted Sep 11, 2012·17 cites·11 claims
- 1894US8053809B2Device including high-K metal gate finfet and resistive structure and method of forming thereofIBM·Filed 2009·Granted Nov 8, 2011·32 cites·21 claims
- 1994US8021949B2Method and structure for forming finFETs with multiple doping regions on a same chipIBM·Filed 2009·Granted Sep 20, 2011·23 cites·16 claims
- 2094US6939751B2Method and manufacture of thin silicon on insulator (SOI) with recessed channelIBM·Filed 2003·Granted Sep 6, 2005·98 cites·19 claims
- 2193US9708713B2Aerosol deposition coating for semiconductor chamber componentsAPPLIED MATERIALS INC·Filed 2014·Granted Jul 18, 2017·5 cites·16 claims
- 2293US8753912B2Nano/microwire solar cell fabricated by nano/microsphere lithographyGRAHAM WILLIAM·Filed 2012·Granted Jun 17, 2014·10 cites·23 claims
- 2393US8084825B2Trilayer resist scheme for gate etching applicationsFULLER NICHOLAS C·Filed 2008·Granted Dec 27, 2011·22 cites·14 claims
- 2493US6645861B2Self-aligned silicide process for silicon sidewall source and drain contactsIBM·Filed 2001·Granted Nov 11, 2003·71 cites·35 claims
- 2592US10418229B2Aerosol deposition coating for semiconductor chamber componentsAPPLIED MATERIALS INC·Filed 2017·Granted Sep 17, 2019·3 cites·20 claims
- 2692US10204781B1Methods for bottom up fin structure formationAPPLIED MATERIALS INC·Filed 2018·Granted Feb 12, 2019·6 cites·20 claims
- 2792US9797037B2Ion beam sputtering with ion assisted deposition for coatings on chamber componentsAPPLIED MATERIALS INC·Filed 2016·Granted Oct 24, 2017·2 cites·9 claims
- 2892US7091566B2Dual gate FinFetIBM·Filed 2003·Granted Aug 15, 2006·69 cites·31 claims
- 2991US9548201B2Self-aligned multiple spacer patterning schemes for advanced nanometer technologyAPPLIED MATERIALS INC·Filed 2015·Granted Jan 17, 2017·6 cites·14 claims
- 3091US8993419B1Trench formation with CD less than 10 NM for replacement Fin growthAPPLIED MATERIALS INC·Filed 2013·Granted Mar 31, 2015·9 cites·20 claims
- 3191US8829625B2Nanowire FET with trapezoid gate structureSLEIGHT JEFFREY W·Filed 2012·Granted Sep 9, 2014·11 cites·19 claims
- 3290US10424507B2Fully self-aligned viaMICROMATERIALS LLC·Filed 2017·Granted Sep 24, 2019·5 cites·13 claims
- 3390US9245791B2Method for fabricating a contactGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 26, 2016·5 cites·8 claims
- 3490US8354331B2Multiplying pattern density by single sidewall imaging transferIBM·Filed 2009·Granted Jan 15, 2013·12 cites·19 claims
- 3590US8324036B2Device having and method for forming fins with multiple widths for an integrated circuitCHENG KANGGUO·Filed 2009·Granted Dec 4, 2012·12 cites·24 claims
- 3690US8298881B2Nanowire FET with trapezoid gate structureSLEIGHT JEFFREY W·Filed 2010·Granted Oct 30, 2012·11 cites·8 claims
- 3790US7732874B2FinFET structure using differing gate dielectric materials and gate electrode materialsIBM·Filed 2007·Granted Jun 8, 2010·19 cites·16 claims
- 3890US7247912B2Structures and methods for making strained MOSFETsIBM·Filed 2004·Granted Jul 24, 2007·74 cites·8 claims
- 3989US10600688B2Methods of producing self-aligned viasMICROMATERIALS LLC·Filed 2018·Granted Mar 24, 2020·6 cites·17 claims
- 4089US9412603B2Trimming silicon fin width through oxidation and etchAPPLIED MATERIALS INC·Filed 2014·Granted Aug 9, 2016·8 cites·19 claims
- 4189US8211735B2Nano/microwire solar cell fabricated by nano/microsphere lithographyGRAHAM WILLIAM·Filed 2009·Granted Jul 3, 2012·12 cites·16 claims
- 4289US6518136B2Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabricationIBM·Filed 2000·Granted Feb 11, 2003·42 cites·8 claims
- 4388US10692728B2Use of selective aluminum oxide etchMICROMATERIALS LLC·Filed 2018·Granted Jun 23, 2020·5 cites·17 claims
- 4488US9812341B2Rare-earth oxide based coatings based on ion assisted depositionAPPLIED MATERIALS INC·Filed 2017·Granted Nov 7, 2017·3 cites·20 claims
- 4588US8324058B2Contacts for FET devicesCHENG KANGGUO·Filed 2010·Granted Dec 4, 2012·9 cites·17 claims
- 4688US7816275B1Gate patterning of nano-channel devicesIBM·Filed 2009·Granted Oct 19, 2010·13 cites·18 claims
- 4788US6936522B2Selective silicon-on-insulator isolation structure and methodIBM·Filed 2003·Granted Aug 30, 2005·37 cites·22 claims
- 4888US6429091B1Patterned buried insulatorIBM·Filed 2000·Granted Aug 6, 2002·55 cites·8 claims
- 4987US10553485B2Methods of producing fully self-aligned vias and contactsMICROMATERIALS LLC·Filed 2018·Granted Feb 4, 2020·5 cites·14 claims
- 5087US9721807B2Cyclic spacer etching process with improved profile controlAPPLIED MATERIALS INC·Filed 2016·Granted Aug 1, 2017·4 cites·17 claims
Showing the top 50 of 197 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →