Inventor · disambiguated record
Moshe Eizenberg
Also filed as: EIZENBERG MOSHE
8 granted patents·2 pending applications·308 citations·filing 1983–2002
89Inventor score
Top patents by PatentIndex Score
10 records- 0193US4502209AForming low-resistance contact to siliconAT & T BELL LAB·Filed 1983·Granted Mar 5, 1985·75 cites·9 claims
- 0291US5817576AUtilization of SiH4 soak and purge in deposition processesAPPLIED MATERIALS INC·Filed 1996·Granted Oct 6, 1998·86 cites·33 claims
- 0388US5643633AUniform tungsten silicide films produced by chemical vapor depostitonAPPLIED MATERIALS INC·Filed 1995·Granted Jul 1, 1997·75 cites·15 claims
- 0477US6410460B1Technology for thermodynamically stable contacts for binary wide band gap semiconductorsUNIV RAMOT·Filed 2000·Granted Jun 25, 2002·35 cites·13 claims
- 0560US5558910AUniform tungsten silicide films produced by chemical vapor depositionAPPLIED MATERIALS INC·Filed 1995·Granted Sep 24, 1996·24 cites·11 claims
- 0649US5780360APurge in silicide deposition processes dichlorosilaneAPPLIED MATERIALS INC·Filed 1996·Granted Jul 14, 1998·9 cites·13 claims
- 0742US2003017695A1Reliability barrier integration for Cu applicationAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 0842US2003013297A1Reliability barrier integration for Cu applicationAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 0935US6193813B1Utilization of SiH4 soak and purge in deposition processesAPPLIED MATERIALS INC·Filed 1998·Granted Feb 27, 2001·3 cites·12 claims
- 1029US4980751AElectrical multilayer contact for microelectronic structureIBM·Filed 1989·Granted Dec 25, 1990·1 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →