US2003013297A1PendingUtilityA1

Reliability barrier integration for Cu application

42
Assignee: APPLIED MATERIALS INCPriority: May 14, 1997Filed: Sep 16, 2002Published: Jan 16, 2003
Est. expiryMay 14, 2017(expired)· nominal 20-yr term from priority
Inventors:Fusen ChenLiang-Yuh ChenRoderick C. MoselyMoshe Eizenberg
H10P 14/432H10P 14/44H10P 14/43H10W 20/425H10W 20/076H10W 20/056H10W 20/42H10W 20/035H10W 20/034H10W 20/033H10W 20/082C25D 5/02
42
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Claims

Abstract

The present invention provides a process sequence and related hardware for filling a hole with copper. The sequence comprises first forming a reliable barrier layer in the hole to prevent diffusion of the copper into the dielectric layer through which the hole is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the bottom of the hole, depositing a second barrier, and then filling the hole with copper. An alternative sequence comprises depositing a first barrier layer over a blanket dielectric layer, forming a hole through both the barrier layer and the dielectric layer, depositing a generally conformal second barrier layer in the hole, removing the barrier layer from the bottom of the hole, and selectively filling the hole with copper.

Claims

exact text as granted — not AI-modified
1 . A method of depositing layers in a hole formed in a dielectric layer of a substrate, comprising: 
 depositing a barrier layer comprising Ta, wherein the depositing a barrier layer comprises etching barrier material from the bottom of the hole using a noble gas-containing plasma after conformal deposition of the barrier material; and    depositing copper on the barrier layer.    
     
     
         2 . The method of  claim 1 , wherein the barrier layer comprising Ta covers the bottom of the hole.  
     
     
         3 . The method of  claim 2 , wherein the barrier layer comprising Ta is a Ta or TaN barrier layer.  
     
     
         4 . The method of  claim 1 , wherein the copper is deposited by one or more of physical vapor deposition, chemical vapor deposition, and electroplating.  
     
     
         5 . The method of  claim 1 , wherein the depositing copper comprises sputter depositing using a plasma process having an average ion density of greater than 10 11  cm −3 .  
     
     
         6 . The method of  claim 1 , wherein both the depositing a barrier layer and the depositing copper comprise utilizing high density plasma deposition.  
     
     
         7 . The method of  claim 6 , wherein the high density plasma deposition is sputter deposition.  
     
     
         8 . The method of  claim 1 , wherein the barrier layer is deposited by high density plasma physical vapor deposition.  
     
     
         9 . The method of  claim 8 , wherein the plasma has an average ion density of greater than 10 11  cm −3 .  
     
     
         10 . The method of  claim 8 , wherein RF power is applied for at least a portion of the depositing a barrier layer.  
     
     
         11 . The method of  claim 1 , wherein the barrier layer is deposited in a deposition chamber, and the barrier material is etched in an etch chamber.  
     
     
         12 . The method of  claim 1 , wherein RF power is supplied during the etching of the barrier material.  
     
     
         13 . The method of  claim 12 , further comprising supplying DC electrical power while etching the barrier material.  
     
     
         14 . The method of  claim 1 , wherein argon is supplied to form the noble gas-containing plasma during the etching.  
     
     
         15 . The method of  claim 14 , wherein hydrogen is supplied as part of the noble gas-containing plasma.  
     
     
         16 . The method of  claim 1 , wherein the depositing copper comprises depositing a wetting layer of copper.  
     
     
         17 . The method of  claim 16 , wherein the depositing a wetting layer of copper uses a plasma deposition.  
     
     
         18 . The method of  claim 17 , wherein the depositing copper further comprises filling the hole with copper by a process comprising electroplating to complete the filling.  
     
     
         19 . The method of  claim 16 , wherein the depositing copper further comprises filling the hole with copper after the depositing the wetting layer of copper.  
     
     
         20 . The method of  claim 16 , wherein the wetting layer is deposited by sputter deposition utilizing a high density plasma.  
     
     
         21 . The method of  claim 20 , wherein the high density plasma has an average ion density of greater than 10 11  cm −3 .  
     
     
         22 . The method of  claim 21 , wherein the depositing a wetting layer by sputter deposition comprises inductive coupling of energy into the high density plasma.  
     
     
         23 . The method of  claim 1 , wherein the barrier material comprises Si x N y .  
     
     
         24 . A method of depositing layers in a hole formed in a dielectric layer, comprising: 
 depositing a barrier over the surfaces of the hole, wherein the depositing a barrier includes etching barrier material at the bottom surface using a noble gas-containing plasma after a deposition of the barrier material, and wherein the barrier includes Ta or TaN covering the bottom surface of the hole; and    sputter depositing copper on the barrier using a plasma having an average ion density of greater than 10 11  cm −3  while RF biasing the substrate.    
     
     
         25 . The method of  claim 24 , further comprising filling the holes with copper.  
     
     
         26 . The method of  claim 25 , wherein the filling the holes with copper comprises electroplating.  
     
     
         27 . The method of  claim 24 , wherein the depositing a barrier comprises depositing a conformal layer of the barrier material.  
     
     
         28 . The method of  claim 27 , wherein the etching of the bottom surfaces is performed after the depositing the conformal layer.  
     
     
         29 . The method of  claim 24 , wherein the depositing the barrier comprises high density plasma sputter deposition.  
     
     
         30 . The method of  claim 29 , wherein the plasma has an average ion density of greater than 10 11  cm −3 .  
     
     
         31 . The method of  claim 29 , wherein RF power is applied to the high density plasma for at least a portion of the barrier layer deposition.  
     
     
         32 . The method of  claim 24 , wherein the barrier is deposited in a deposition chamber, and the barrier material is etched in an etch chamber.  
     
     
         33 . The method of  claim 24 , wherein the barrier is formed by one or more of CVD and PVD.  
     
     
         34 . The method of  claim 24 , wherein RF and DC power are supplied during the etching barrier material.  
     
     
         35 . The method of  claim 24 , wherein argon is supplied to form the noble gas-containing plasma during the etching barrier material.  
     
     
         36 . The method of  claim 35 , wherein hydrogen is supplied as part of the noble gas-containing plasma.  
     
     
         37 . A method of depositing layers in a hole formed in a dielectric layer of a substrate, comprising: 
 depositing a conformal barrier comprising Ta or TaN, wherein the depositing a conformal barrier comprises etching barrier material from the bottom of the hole using a noble gas-containing plasma;    depositing a wetting layer of copper using a plasma deposition; and    filling the hole with copper by a process comprising electroplating to complete the filling.    
     
     
         38 . The method of  claim 37 , wherein the depositing a wetting layer comprises a plasma-enhanced chemical vapor deposition.  
     
     
         39 . The method of  claim 37 , wherein the depositing a wetting layer comprises high density sputter vapor deposition.  
     
     
         40 . The method of  claim 39 , wherein the high density sputter vapor deposition utilizes a plasma having an average ion density of greater than 10 11  cm −3 .  
     
     
         41 . The method of  claim 37 , wherein prior to the electroplating to complete the filling, copper is deposited using high density sputter deposition.  
     
     
         42 . The method of  claim 37 , wherein the depositing a conformal barrier comprises a plasma process having an average ion density of greater than 10 11  cm 3 .  
     
     
         43 . The method of  claim 42 , wherein RF power is applied for at least a portion of the depositing a conformal barrier.  
     
     
         44 . The method of  claim 37 , wherein the conformal barrier is deposited in a deposition chamber, and the barrier material is etched in an etch chamber.  
     
     
         45 . The method of  claim 37 , wherein RF and DC power are supplied during the etching barrier material.  
     
     
         46 . The method of  claim 37 , wherein argon is supplied to form the noble gas-containing plasma during the etching barrier material.  
     
     
         47 . The method of  claim 46 , wherein hydrogen is supplied as part of the noble gas-containing plasma.

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