Inventor · disambiguated record
Hoon-Joo Na
Also filed as: NA HOON JOO
39 granted patents·5 pending applications·111 citations·filing 2009–2022
96Inventor score
Top patents by PatentIndex Score
44 records- 0193US9806075B2Integrated circuit devices having a Fin-type active region and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 31, 2017·9 cites·20 claims
- 0293US9780183B2Semiconductor devices having work function metal films and tuning materialsKIM WAN-DON·Filed 2016·Granted Oct 3, 2017·12 cites·20 claims
- 0390US10312340B2Semiconductor devices having work function metal films and tuning materialsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·6 cites·20 claims
- 0489US8748251B2Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devicesNA HOON-JOO·Filed 2012·Granted Jun 10, 2014·10 cites·14 claims
- 0588US10906283B2Wafer bonding apparatus for directly bonding wafers and a wafer bonding system having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·5 cites·19 claims
- 0688US10340358B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 2, 2019·6 cites·20 claims
- 0787US10600913B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 24, 2020·4 cites·20 claims
- 0886US8293599B2Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materialsNA HOON-JOO·Filed 2009·Granted Oct 23, 2012·12 cites·18 claims
- 0986US7972950B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·8 cites·10 claims
- 1083US10593670B2Methods of manufacturing integrated circuit devices having a fin-type active regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 17, 2020·3 cites·20 claims
- 1182US10847515B2Semiconductor devices with nanowires and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·19 claims
- 1281US9793368B2Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth elementSON HYEOK-JUN·Filed 2016·Granted Oct 17, 2017·5 cites·18 claims
- 1380US10177149B2Semiconductor devices with nanowires and with metal layers having different grain sizesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 8, 2019·2 cites·19 claims
- 1479US9287199B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceLEE HYE-LAN·Filed 2010·Granted Mar 15, 2016·6 cites·26 claims
- 1577US10756195B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·12 claims
- 1676US8786028B2Semiconductor device and method of fabricating the sameHONG HYUNG-SEOK·Filed 2012·Granted Jul 22, 2014·5 cites·35 claims
- 1775US9543300B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 10, 2017·2 cites·30 claims
- 1875US9252058B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 2, 2016·3 cites·20 claims
- 1974US9786761B2Integrated circuit device having an interfacial layer and method of manufacturing the sameLEE DONG-SOO·Filed 2015·Granted Oct 10, 2017·2 cites·19 claims
- 2070US8580629B2Method of fabricating semiconductor device using a work function control filmPARK HONG-BAE·Filed 2011·Granted Nov 12, 2013·3 cites·15 claims
- 2169US11967595B2Semiconductor devices with nanowires and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 23, 2024·0 cites·20 claims
- 2269US11495597B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 2369US9236313B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 12, 2016·1 cites·16 claims
- 2466US8557651B2Method of manufacturing a semiconductor device using an etchantLEE HYO-SAN·Filed 2011·Granted Oct 15, 2013·2 cites·19 claims
- 2563US9812448B2Semiconductor devices and methods for fabricating the sameKWON OH-SEONG·Filed 2015·Granted Nov 7, 2017·1 cites·19 claims
- 2662US10872888B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 22, 2020·0 cites·17 claims
- 2761US11283235B2Semiconductor laser deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 22, 2022·0 cites·20 claims
- 2856US11588039B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 21, 2023·0 cites·12 claims
- 2955US10361194B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 23, 2019·0 cites·19 claims
- 3052US12148784B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 19, 2024·0 cites·16 claims
- 3152US10529816B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 7, 2020·0 cites·14 claims
- 3251US12402430B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·18 claims
- 3351US8932922B2Method of fabricating semiconductor device having dual gateNA HOON-JOO·Filed 2011·Granted Jan 13, 2015·0 cites·12 claims
- 3450US11177364B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 16, 2021·0 cites·19 claims
- 3550US2014246726A1Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 3650US2018130905A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 3748US11417536B2Method for wafer planarization and an image sensor made by the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 16, 2022·0 cites·18 claims
- 3847US11133277B2Semiconductor device bonded by bonding padsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·19 claims
- 3946US11728200B2Wafer bonding apparatusesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 15, 2023·0 cites·20 claims
- 4039US9929252B2Method of forming thin film and method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 27, 2018·0 cites·14 claims
- 4138US2012196433A1Method of manufacturing a semiconductor deviceHAN JEONG-HEE·Filed 2011·Application pending·0 cites
- 4237US9923077B2Methods of curing a dielectric layer for manufacture of a semiconductor deviceHWANG YOON TAE·Filed 2016·Granted Mar 20, 2018·0 cites·20 claims
- 4335US2018261677A1Semiconductor Device and Method for Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 4434US2016351569A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Hoon-Joo Na files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →