Inventor · disambiguated record
Jang-Gyoo Yang
Also filed as: YANG JANG G · YANG JANG GYOO
36 granted patents·14 pending applications·2,997 citations·filing 2002–2022
98Inventor score
Top patents by PatentIndex Score
50 records- 0199US9144147B2Semiconductor processing system and methods using capacitively coupled plasmaAPPLIED MATERIALS INC·Filed 2013·Granted Sep 22, 2015·188 cites·11 claims
- 0299US8357435B2Flowable dielectric equipment and processesAPPLIED MATERIALS INC·Filed 2008·Granted Jan 22, 2013·160 cites·5 claims
- 0399US6900596B2Capacitively coupled plasma reactor with uniform radial distribution of plasmaAPPLIED MATERIALS INC·Filed 2002·Granted May 31, 2005·224 cites·53 claims
- 0498US10354843B2Chemical control features in wafer process equipmentAPPLIED MATERIALS INC·Filed 2017·Granted Jul 16, 2019·40 cites·20 claims
- 0598US10032606B2Semiconductor processing with DC assisted RF power for improved controlAPPLIED MATERIALS INC·Filed 2016·Granted Jul 24, 2018·94 cites·13 claims
- 0698US9978564B2Chemical control features in wafer process equipmentAPPLIED MATERIALS INC·Filed 2015·Granted May 22, 2018·106 cites·13 claims
- 0798US9384997B2Dry-etch selectivityAPPLIED MATERIALS INC·Filed 2015·Granted Jul 5, 2016·146 cites·20 claims
- 0898US9373517B2Semiconductor processing with DC assisted RF power for improved controlAPPLIED MATERIALS INC·Filed 2013·Granted Jun 21, 2016·137 cites·20 claims
- 0998US9132436B2Chemical control features in wafer process equipmentAPPLIED MATERIALS INC·Filed 2013·Granted Sep 15, 2015·198 cites·19 claims
- 1098US8969212B2Dry-etch selectivityAPPLIED MATERIALS INC·Filed 2013·Granted Mar 3, 2015·184 cites·20 claims
- 1198US7955986B2Capacitively coupled plasma reactor with magnetic plasma controlAPPLIED MATERIALS INC·Filed 2006·Granted Jun 7, 2011·70 cites·13 claims
- 1298US7196283B2Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surfaceAPPLIED MATERIALS INC·Filed 2005·Granted Mar 27, 2007·118 cites·48 claims
- 1397US10062587B2Pedestal with multi-zone temperature control and multiple purge capabilitiesAPPLIED MATERIALS INC·Filed 2016·Granted Aug 28, 2018·96 cites·18 claims
- 1497US8329262B2Dielectric film formation using inert gas excitationMILLER MATTHEW L·Filed 2010·Granted Dec 11, 2012·115 cites·13 claims
- 1597US7989365B2Remote plasma source seasoningAPPLIED MATERIALS INC·Filed 2009·Granted Aug 2, 2011·621 cites·23 claims
- 1697US7359177B2Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply outputAPPLIED MATERIALS INC·Filed 2005·Granted Apr 15, 2008·42 cites·16 claims
- 1797US6853141B2Capacitively coupled plasma reactor with magnetic plasma controlFiled 2002·Granted Feb 8, 2005·140 cites·30 claims
- 1896US9502218B2RPS assisted RF plasma source for semiconductor processingAPPLIED MATERIALS INC·Filed 2015·Granted Nov 22, 2016·12 cites·14 claims
- 1996US9267739B2Pedestal with multi-zone temperature control and multiple purge capabilitiesAPPLIED MATERIALS INC·Filed 2012·Granted Feb 23, 2016·52 cites·14 claims
- 2096US8894767B2Flow control features of CVD chambersCHUC KIEN N·Filed 2010·Granted Nov 25, 2014·107 cites·16 claims
- 2196US8771538B2Plasma source designLUBOMIRSKY DMITRY·Filed 2010·Granted Jul 8, 2014·28 cites·5 claims
- 2294US10283321B2Semiconductor processing system and methods using capacitively coupled plasmaYANG JANG GYOO·Filed 2011·Granted May 7, 2019·39 cites·15 claims
- 2394US10056233B2RPS assisted RF plasma source for semiconductor processingAPPLIED MATERIALS INC·Filed 2017·Granted Aug 21, 2018·7 cites·14 claims
- 2491US9741545B2RPS assisted RF plasma source for semiconductor processingAPPLIED MATERIALS INC·Filed 2016·Granted Aug 22, 2017·5 cites·17 claims
- 2589US8742665B2Plasma source designLUBOMIRSKY DMITRY·Filed 2010·Granted Jun 3, 2014·20 cites·24 claims
- 2686US10550472B2Flow control features of CVD chambersAPPLIED MATERIALS INC·Filed 2014·Granted Feb 4, 2020·2 cites·4 claims
- 2784US7972968B2High density plasma gapfill deposition-etch-deposition process etchantAPPLIED MATERIALS INC·Filed 2008·Granted Jul 5, 2011·9 cites·19 claims
- 2884US7141757B2Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independentAPPLIED MATERIALS INC·Filed 2004·Granted Nov 28, 2006·23 cites·22 claims
- 2977US12203171B2Batch curing chamber with gas distribution and individual pumpingAPPLIED MATERIALS INC·Filed 2022·Granted Jan 21, 2025·0 cites·9 claims
- 3077US10113236B2Batch curing chamber with gas distribution and individual pumpingAPPLIED MATERIALS INC·Filed 2014·Granted Oct 30, 2018·2 cites·20 claims
- 3175US7994872B2Apparatus for multiple frequency power applicationAPPLIED MATERIALS INC·Filed 2009·Granted Aug 9, 2011·6 cites·12 claims
- 3274US8237517B2Apparatus for multiple frequency power applicationSHANNON STEVEN C·Filed 2011·Granted Aug 7, 2012·3 cites·20 claims
- 3372US7375947B2Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply outputAPPLIED MATERIALS INC·Filed 2007·Granted May 20, 2008·3 cites·16 claims
- 3470US12146219B2Flow control features of CVD chambersAPPLIED MATERIALS INC·Filed 2020·Granted Nov 19, 2024·0 cites·21 claims
- 3565US11264213B2Chemical control features in wafer process equipmentAPPLIED MATERIALS INC·Filed 2019·Granted Mar 1, 2022·0 cites·20 claims
- 3662US11408075B2Batch curing chamber with gas distribution and individual pumpingAPPLIED MATERIALS INC·Filed 2018·Granted Aug 9, 2022·0 cites·10 claims
- 3760US2008023143A1Capacitively coupled plasma reactor with magnetic plasma controlHOFFMAN DANIEL J·Filed 2007·Application pending·0 cites
- 3859US2010098882A1Plasma source for chamber cleaning and processAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 3955US2011201134A1Capacitively coupled plasma reactor with magnetic plasma controlAPPLIED MATERIALS INC·Filed 2011·Application pending·0 cites
- 4054US2013306758A1Precursor distribution features for improved deposition uniformityAPPLIED MATERIALS INC·Filed 2012·Application pending·0 cites
- 4153US2009277587A1Flowable dielectric equipment and processesAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 4252US2009250335A1Method of controlling plasma distribution uniformity by superposition of different constant solenoid fieldsHOFFMAN DANIEL J·Filed 2008·Application pending·0 cites
- 4352US2009250432A1Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fieldsHOFFMAN DANIEL J·Filed 2008·Application pending·0 cites
- 4450US2009004873A1Hybrid etch chamber with decoupled plasma controlsINTEVAC INC·Filed 2007·Application pending·0 cites
- 4547US2005001556A1Capacitively coupled plasma reactor with magnetic plasma controlAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 4646US2012180954A1Semiconductor processing system and methods using capacitively coupled plasmaYANG JANG-GYOO·Filed 2011·Application pending·0 cites
- 4740US2005106873A1Plasma chamber having multiple RF source frequenciesFiled 2004·Application pending·0 cites
- 4838US2004040664A1Cathode pedestal for a plasma etch reactorFiled 2003·Application pending·0 cites
- 4932US2017186586A1Plasma system, plasma processing method, and plasma etching methodSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 5032US2016035610A1Electrostatic chuck assemblies having recessed support surfaces, semiconductor fabricating apparatuses having the same, and plasma treatment methods using the samePARK MYOUNG SOO·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →