Inventor · disambiguated record
Wilfried E. Haensch
Also filed as: HAENSCH WILFRIED · HAENSCH WILFRIED E · HAENSCH WILFRIED E A · HAENSCH WILFRIED ERNST-AUGUST
97 granted patents·5 pending applications·1,610 citations·filing 1996–2021
99Inventor score
Top patents by PatentIndex Score
102 records- 0199US9312383B1Self-aligned contacts for vertical field effect transistorsIBM·Filed 2015·Granted Apr 12, 2016·55 cites·20 claims
- 0299US9287362B1Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2014·Granted Mar 15, 2016·62 cites·10 claims
- 0399US8637359B2Fin-last replacement metal gate FinFET processCHANG JOSEPHINE B·Filed 2011·Granted Jan 28, 2014·71 cites·17 claims
- 0499US7923337B2Fin field effect transistor devices with self-aligned source and drain regionsIBM·Filed 2007·Granted Apr 12, 2011·234 cites·19 claims
- 0599US7750682B2CMOS back-gated keeper techniqueIBM·Filed 2008·Granted Jul 6, 2010·120 cites·12 claims
- 0698US7089515B2Threshold voltage roll-off compensation using back-gated MOSFET devices for system high-performance and low standby powerIBM·Filed 2004·Granted Aug 8, 2006·135 cites·13 claims
- 0796US9397226B2Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2015·Granted Jul 19, 2016·12 cites·14 claims
- 0896US8455932B2Local interconnect structure self-aligned to gate structureKHAKIFIROOZ ALI·Filed 2011·Granted Jun 4, 2013·28 cites·20 claims
- 0996US8455313B1Method for fabricating finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2012·Granted Jun 4, 2013·28 cites·7 claims
- 1096US8441084B2Horizontal polysilicon-germanium heterojunction bipolar transistorCAI JIN·Filed 2011·Granted May 14, 2013·30 cites·20 claims
- 1195US9397094B2Semiconductor structure with an L-shaped bottom plateIBM·Filed 2014·Granted Jul 19, 2016·13 cites·8 claims
- 1295US8969965B2Fin-last replacement metal gate FinFETIBM·Filed 2014·Granted Mar 3, 2015·18 cites·6 claims
- 1395US7132323B2CMOS well structure and method of forming the sameIBM·Filed 2003·Granted Nov 7, 2006·99 cites·25 claims
- 1494US8247895B24D device process and structureHAENSCH WILFRIED·Filed 2010·Granted Aug 21, 2012·25 cites·32 claims
- 1594US7989900B2Semiconductor structure including gate electrode having laterally variable work functionIBM·Filed 2009·Granted Aug 2, 2011·103 cites·8 claims
- 1693US9548385B1Self-aligned contacts for vertical field effect transistorsIBM·Filed 2016·Granted Jan 17, 2017·7 cites·18 claims
- 1793US8557657B1Retrograde substrate for deep trench capacitorsBASKER VEERARAGHAVAN S·Filed 2012·Granted Oct 15, 2013·12 cites·18 claims
- 1892US10011098B2Four D device process and structureIBM·Filed 2015·Granted Jul 3, 2018·8 cites·22 claims
- 1992US8637931B2finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2011·Granted Jan 28, 2014·13 cites·18 claims
- 2092US8531001B2Complementary bipolar inverterCAI JIN·Filed 2011·Granted Sep 10, 2013·13 cites·20 claims
- 2191US8927338B1Flexible, stretchable electronic devicesIBM·Filed 2013·Granted Jan 6, 2015·9 cites·17 claims
- 2291US8860107B2FinFET-compatible metal-insulator-metal capacitorHAENSCH WILFRIED E·Filed 2010·Granted Oct 14, 2014·17 cites·20 claims
- 2391US8592280B2Fin field effect transistor devices with self-aligned source and drain regionsCHANG JOSEPHINE B·Filed 2009·Granted Nov 26, 2013·15 cites·10 claims
- 2491US8318568B2Tunnel field effect transistorDORIS BRUCE B·Filed 2010·Granted Nov 27, 2012·11 cites·8 claims
- 2591US8080838B2Contact scheme for FINFET structures with multiple FINsCHANG LELAND·Filed 2009·Granted Dec 20, 2011·18 cites·18 claims
- 2690US8753964B2FinFET structure having fully silicided finBRYANT ANDRES·Filed 2011·Granted Jun 17, 2014·12 cites·12 claims
- 2790US7417288B2Substrate solution for back gate controlled SRAM with coexisting logic devicesIBM·Filed 2005·Granted Aug 26, 2008·13 cites·1 claims
- 2889US8569121B2Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making sameHAENSCH WILFRIED ERNST-AUGUST·Filed 2011·Granted Oct 29, 2013·9 cites·5 claims
- 2989US7479418B2Methods of applying substrate bias to SOI CMOS circuitsIBM·Filed 2006·Granted Jan 20, 2009·13 cites·5 claims
- 3089US7018873B2Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gateIBM·Filed 2003·Granted Mar 28, 2006·46 cites·19 claims
- 3188US8890261B2Fin field effect transistor devices with self-aligned source and drain regionsIBM·Filed 2013·Granted Nov 18, 2014·7 cites·10 claims
- 3288US8802514B2Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making sameIBM·Filed 2013·Granted Aug 12, 2014·6 cites·15 claims
- 3388US8492794B2Vertical polysilicon-germanium heterojunction bipolar transistorCAI JIN·Filed 2011·Granted Jul 23, 2013·8 cites·15 claims
- 3488US6812527B2Method to control device threshold of SOI MOSFET'sIBM·Filed 2002·Granted Nov 2, 2004·37 cites·9 claims
- 3588US6664598B1Polysilicon back-gated SOI MOSFET for dynamic threshold voltage controlIBM·Filed 2002·Granted Dec 16, 2003·40 cites·9 claims
- 3687US8766353B2Tunnel field effect transistorDORIS BRUCE B·Filed 2012·Granted Jul 1, 2014·6 cites·7 claims
- 3787US7273785B2Method to control device threshold of SOI MOSFET'sIBM·Filed 2004·Granted Sep 25, 2007·34 cites·8 claims
- 3886US5858866AGeometrical control of device corner thresholdIBM·Filed 1996·Granted Jan 12, 1999·54 cites·3 claims
- 3985US7601569B2Partially depleted SOI field effect transistor having a metallized source side halo regionIBM·Filed 2007·Granted Oct 13, 2009·10 cites·6 claims
- 4084US10497752B1Resistive random-access memory array with reduced switching resistance variabilityIBM·Filed 2018·Granted Dec 3, 2019·5 cites·13 claims
- 4184US9368502B2Replacement gate multigate transistor for embedded DRAMCHANG JOSEPHINE B·Filed 2011·Granted Jun 14, 2016·6 cites·7 claims
- 4284US8409957B2Graphene devices and silicon field effect transistors in 3D hybrid integrated circuitsCHANG JOSEPHINE B·Filed 2011·Granted Apr 2, 2013·5 cites·20 claims
- 4383US9299795B2Partial sacrificial dummy gate with CMOS device with high-k metal gateIBM·Filed 2015·Granted Mar 29, 2016·3 cites·4 claims
- 4483US8969992B2Autonomous integrated circuitsIBM·Filed 2014·Granted Mar 3, 2015·2 cites·9 claims
- 4583US7919812B2Partially depleted SOI field effect transistor having a metallized source side halo regionIBM·Filed 2009·Granted Apr 5, 2011·8 cites·14 claims
- 4682US11443176B2Acceleration of convolutional neural networks on analog arraysIBM·Filed 2019·Granted Sep 13, 2022·5 cites·20 claims
- 4782US9385050B2Structure and method to fabricate resistor on finFET processesHAENSCH WILFRIED ERNST-AUGUST·Filed 2011·Granted Jul 5, 2016·7 cites·20 claims
- 4882US6815296B2Polysilicon back-gated SOI MOSFET for dynamic threshold voltage controlIBM·Filed 2003·Granted Nov 9, 2004·28 cites·8 claims
- 4981US9041076B2Partial sacrificial dummy gate with CMOS device with high-k metal gateIBM·Filed 2013·Granted May 26, 2015·4 cites·16 claims
- 5080US7838942B2Substrate solution for back gate controlled SRAM with coexisting logic devicesIBM·Filed 2008·Granted Nov 23, 2010·5 cites·20 claims
Showing the top 50 of 102 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →