Assignee
CAI JIN
US·29 granted patents·3 pending applications·325 citations·filing 2007–2012
Top patents by PatentIndex Score
32 records- 0197US8980667B2Charge sensors using inverted lateral bipolar junction transistorsCAI JIN·Filed 2012·Granted Mar 17, 2015·18 cites·14 claims
- 0297US8586441B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Nov 19, 2013·32 cites·20 claims
- 0397US8445356B1Integrated circuit having back gating, improved isolation and reduced well resistance and method to fabricate sameCAI JIN·Filed 2012·Granted May 21, 2013·34 cites·13 claims
- 0496US8558282B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Oct 15, 2013·26 cites·20 claims
- 0596US8441084B2Horizontal polysilicon-germanium heterojunction bipolar transistorCAI JIN·Filed 2011·Granted May 14, 2013·30 cites·20 claims
- 0695US8705280B2Electrically programmable floating common gate CMOS device and applications thereofCAI JIN·Filed 2010·Granted Apr 22, 2014·23 cites·20 claims
- 0795US8557670B1SOI lateral bipolar junction transistor having a wide band gap emitter contactCAI JIN·Filed 2012·Granted Oct 15, 2013·22 cites·20 claims
- 0894US8415743B2ETSOI CMOS with back gatesCAI JIN·Filed 2011·Granted Apr 9, 2013·17 cites·11 claims
- 0992US8852985B2Graphene pressure sensorsCAI JIN·Filed 2012·Granted Oct 7, 2014·15 cites·8 claims
- 1092US8531001B2Complementary bipolar inverterCAI JIN·Filed 2011·Granted Sep 10, 2013·13 cites·20 claims
- 1192US8530287B2ETSOI CMOS with back gatesCAI JIN·Filed 2012·Granted Sep 10, 2013·13 cites·9 claims
- 1292US8466473B2Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETsCAI JIN·Filed 2010·Granted Jun 18, 2013·15 cites·25 claims
- 1391US8901680B2Graphene pressure sensorsCAI JIN·Filed 2012·Granted Dec 2, 2014·14 cites·8 claims
- 1488US8492794B2Vertical polysilicon-germanium heterojunction bipolar transistorCAI JIN·Filed 2011·Granted Jul 23, 2013·8 cites·15 claims
- 1584US8526220B2Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platformCAI JIN·Filed 2011·Granted Sep 3, 2013·7 cites·20 claims
- 1684US8314463B2Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the methodCAI JIN·Filed 2009·Granted Nov 20, 2012·9 cites·25 claims
- 1783US9040929B2Charge sensors using inverted lateral bipolar junction transistorsCAI JIN·Filed 2012·Granted May 26, 2015·4 cites·17 claims
- 1876US8927380B2SOI bipolar junction transistor with substrate bias voltagesCAI JIN·Filed 2012·Granted Jan 6, 2015·3 cites·14 claims
- 1976US8329564B2Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the methodCAI JIN·Filed 2007·Granted Dec 11, 2012·5 cites·18 claims
- 2075US8304306B2Fabrication of devices having different interfacial oxide thickness via lateral oxidationCAI JIN·Filed 2011·Granted Nov 6, 2012·3 cites·14 claims
- 2174US8766410B2Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistorsCAI JIN·Filed 2011·Granted Jul 1, 2014·3 cites·16 claims
- 2271US8415744B2SOI CMOS circuits with substrate biasCAI JIN·Filed 2012·Granted Apr 9, 2013·2 cites·20 claims
- 2370US8106458B2SOI CMOS circuits with substrate biasCAI JIN·Filed 2009·Granted Jan 31, 2012·3 cites·9 claims
- 2468US9178061B2Method for fabricating MOSFET on silicon-on-insulator with internal body contactCAI JIN·Filed 2012·Granted Nov 3, 2015·2 cites·18 claims
- 2567US8420469B2Schottky FET fabricated with gate last processCAI JIN·Filed 2010·Granted Apr 16, 2013·2 cites·15 claims
- 2663US8716807B2Fabrication of devices having different interfacial oxide thickness via lateral oxidationCAI JIN·Filed 2012·Granted May 6, 2014·1 cites·6 claims
- 2759US9379028B2SOI CMOS structure having programmable floating backplateCAI JIN·Filed 2009·Granted Jun 28, 2016·1 cites·12 claims
- 2851US2013175661A1Integrated Circuit Having Back Gating, Improved Isolation And Reduced Well Resistance And Method To Fabricate SameCAI JIN·Filed 2012·Application pending·0 cites
- 2950US8541835B2Schottky FET fabricated with gate last processCAI JIN·Filed 2012·Granted Sep 24, 2013·0 cites·7 claims
- 3049US8946040B2SOI lateral bipolar transistor having multi-sided base contact and methods for making sameCAI JIN·Filed 2012·Granted Feb 3, 2015·0 cites·11 claims
- 3147US2013256757A1Soi lateral bipolar junction transistor having a wide band gap emitter contactCAI JIN·Filed 2012·Application pending·0 cites
- 3239US2009080276A1Temperature Dependent Bias for Minimal Stand-by Power in CMOS CircuitsCAI JIN·Filed 2007·Application pending·0 cites
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