Inventor · disambiguated record
Maitreyee Mahajani
Also filed as: MAHAJANI MAITREYEE
46 granted patents·10 pending applications·3,210 citations·filing 1996–2014
99Inventor score
Files withAPPLIED MATERIALS INC22SANDISK 3D LLC9MATRIX SEMICONDUCTOR INC6GANGULI SESHADRI3MAHAJANI MAITREYEE3
Top patents by PatentIndex Score
56 records- 0199US7915164B2Method for forming doped polysilicon via connecting polysilicon layersSANDISK 3D LLC·Filed 2010·Granted Mar 29, 2011·251 cites·7 claims
- 0299US7402534B2Pretreatment processes within a batch ALD reactorAPPLIED MATERIALS INC·Filed 2005·Granted Jul 22, 2008·566 cites·32 claims
- 0399US6952030B2High-density three-dimensional memory cellMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Oct 4, 2005·472 cites·7 claims
- 0498US7798096B2Plasma, UV and ion/neutral assisted ALD or CVD in a batch toolAPPLIED MATERIALS INC·Filed 2006·Granted Sep 21, 2010·487 cites·32 claims
- 0598US7566974B2Doped polysilicon via connecting polysilicon layersSANDISK 3D LLC·Filed 2004·Granted Jul 28, 2009·190 cites·17 claims
- 0698US7221588B2Memory array incorporating memory cells arranged in NAND stringsSANDISK 3D LLC·Filed 2003·Granted May 22, 2007·259 cites·15 claims
- 0798US6984561B2Method for making high density nonvolatile memoryMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Jan 10, 2006·131 cites·17 claims
- 0897US7572052B2Method for monitoring and calibrating temperature in semiconductor processing chambersAPPLIED MATERIALS INC·Filed 2007·Granted Aug 11, 2009·64 cites·23 claims
- 0996US8043907B2Atomic layer deposition processes for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2010·Granted Oct 25, 2011·42 cites·15 claims
- 1096US7749574B2Low temperature ALD SiO2APPLIED MATERIALS INC·Filed 2006·Granted Jul 6, 2010·33 cites·20 claims
- 1195US7776395B2Method of depositing catalyst assisted silicates of high-k materialsAPPLIED MATERIALS INC·Filed 2006·Granted Aug 17, 2010·20 cites·26 claims
- 1295US7557405B2High-density nonvolatile memorySANDISK 3D LLC·Filed 2006·Granted Jul 7, 2009·20 cites·28 claims
- 1395US7508714B2Memory array incorporating mirrored NAND strings and non-shared global bit lines within a blockSANDISK 3D LLC·Filed 2007·Granted Mar 24, 2009·30 cites·17 claims
- 1495US6995422B2High-density three-dimensional memoryMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Feb 7, 2006·52 cites·10 claims
- 1594US9048183B2NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursorsAPPLIED MATERIALS INC·Filed 2014·Granted Jun 2, 2015·14 cites·18 claims
- 1694US7972978B2Pretreatment processes within a batch ALD reactorAPPLIED MATERIALS INC·Filed 2008·Granted Jul 5, 2011·19 cites·25 claims
- 1794US7897208B2Low temperature ALD SiO2APPLIED MATERIALS INC·Filed 2010·Granted Mar 1, 2011·9 cites·20 claims
- 1894US7026212B2Method for making high density nonvolatile memoryMATRIX SEMICONDUCTORS INC·Filed 2004·Granted Apr 11, 2006·54 cites·17 claims
- 1994US6858899B2Thin film transistor with metal oxide layer and method of making sameMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Feb 22, 2005·84 cites·46 claims
- 2094US6464795B1Substrate support member for a processing chamberAPPLIED MATERIALS INC·Filed 2000·Granted Oct 15, 2002·98 cites·28 claims
- 2193US7659158B2Atomic layer deposition processes for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2008·Granted Feb 9, 2010·25 cites·14 claims
- 2292US7012299B2Storage layer optimization of a nonvolatile memory deviceMATRIX SEMICONDUCTORS INC·Filed 2003·Granted Mar 14, 2006·78 cites·43 claims
- 2392US7009275B2Method for making high density nonvolatile memoryMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Mar 7, 2006·37 cites·24 claims
- 2492US6328808B1Apparatus and method for aligning and controlling edge deposition on a substrateAPPLIED MATERIALS INC·Filed 2000·Granted Dec 11, 2001·44 cites·16 claims
- 2589US8642468B2NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursorsGANGULI SESHADRI·Filed 2011·Granted Feb 4, 2014·9 cites·17 claims
- 2688US8361910B2Pretreatment processes within a batch ALD reactorAPPLIED MATERIALS INC·Filed 2011·Granted Jan 29, 2013·6 cites·20 claims
- 2787US8778816B2In situ vapor phase surface activation of SiO2SATO TATSUYA E·Filed 2011·Granted Jul 15, 2014·9 cites·19 claims
- 2879US8987080B2Methods for manufacturing metal gatesAPPLIED MATERIALS INC·Filed 2013·Granted Mar 24, 2015·4 cites·20 claims
- 2978US6186092B1Apparatus and method for aligning and controlling edge deposition on a substrateAPPLIED MATERIALS INC·Filed 1997·Granted Feb 13, 2001·39 cites·32 claims
- 3074US8633119B2Methods for manufacturing high dielectric constant filmsSATO TATSUYA E·Filed 2011·Granted Jan 21, 2014·3 cites·20 claims
- 3174US7921803B2Chamber components with increased pyrometry visibilityAPPLIED MATERIALS INC·Filed 2007·Granted Apr 12, 2011·5 cites·10 claims
- 3274US7915163B2Method for forming doped polysilicon via connecting polysilicon layersSANDISK 3D LLC·Filed 2009·Granted Mar 29, 2011·4 cites·13 claims
- 3369US6174373B1Non-plasma halogenated gas flow prevent metal residuesAPPLIED MATERIALS INC·Filed 2000·Granted Jan 16, 2001·7 cites·17 claims
- 3460US6960794B2Formation of thin channels for TFT devices to ensure low variability of threshold voltagesMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 1, 2005·8 cites·21 claims
- 3559US8951861B2Methods of making a high-density nonvolatile memorySANDISK 3D LLC·Filed 2013·Granted Feb 10, 2015·0 cites·14 claims
- 3658US8004033B2High-density nonvolatile memorySANDISK 3D LLC·Filed 2009·Granted Aug 23, 2011·0 cites·16 claims
- 3758US6271129B1Method for forming a gap filling refractory metal layer having reduced stressAPPLIED MATERIALS INC·Filed 1997·Granted Aug 7, 2001·21 cites·34 claims
- 3857US7495337B2Dual-gate device and methodWALKER ANDREW J·Filed 2007·Granted Feb 24, 2009·4 cites·27 claims
- 3956US8383478B2High-density nonvolatile memory and methods of making the sameSANDISK 3D LLC·Filed 2011·Granted Feb 26, 2013·0 cites·11 claims
- 4055US2014023794A1Method And Apparatus For Low Temperature ALD DepositionMAHAJANI MAITREYEE·Filed 2013·Application pending·0 cites
- 4154US2012192792A1Plasma, uv and ion/neutral assisted ald or cvd in a batch toolMAHAJANI MAITREYEE·Filed 2012·Application pending·0 cites
- 4250US9269584B2N-metal film deposition with initiation layerGANGULI SESHADRI·Filed 2012·Granted Feb 23, 2016·0 cites·20 claims
- 4350US6070599ANon-plasma halogenated gas flow to prevent metal residuesAPPLIED MATERIALS INC·Filed 1997·Granted Jun 6, 2000·10 cites·14 claims
- 4450US2007252299A1Synchronization of precursor pulsing and wafer rotationAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4546US8633114B2Methods for manufacturing high dielectric constant filmsSATO TATSUYA E·Filed 2011·Granted Jan 21, 2014·0 cites·20 claims
- 4644US8592305B2Doping aluminum in tantalum silicideLU XINLIANG·Filed 2011·Granted Nov 26, 2013·0 cites·14 claims
- 4744US2009017637A1Method and apparatus for batch processing in a vertical reactorHUANG YI-CHIAU·Filed 2007·Application pending·0 cites
- 4843US8895443B2N-metal film deposition with initiation layerGANGULI SESHADRI·Filed 2012·Granted Nov 25, 2014·0 cites·17 claims
- 4943US2007259111A1Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric filmSINGH KAUSHAL K·Filed 2006·Application pending·0 cites
- 5040US2007084408A1Batch processing chamber with diffuser plate and injector assemblyAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
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