Inventor · disambiguated record
Kyung-In Choi
Also filed as: CHOI KYUNG-IN
34 granted patents·20 pending applications·396 citations·filing 2002–2024
97Inventor score
Top patents by PatentIndex Score
54 records- 0197US6815285B2Methods of forming dual gate semiconductor devices having a metal nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·147 cites·27 claims
- 0292US7081409B2Methods of producing integrated circuit devices utilizing tantalum amine derivativesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 25, 2006·50 cites·19 claims
- 0391US9853111B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 26, 2017·7 cites·20 claims
- 0491US7098131B2Methods for forming atomic layers and thin films including tantalum nitride and devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 29, 2006·48 cites·25 claims
- 0588US9390977B2Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variationSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 12, 2016·5 cites·20 claims
- 0687US10593557B2Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 17, 2020·4 cites·18 claims
- 0787US7833855B2Methods of producing integrated circuit devices utilizing tantalum amine derivativesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 16, 2010·10 cites·33 claims
- 0887US7452811B2Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·10 cites·10 claims
- 0986US7470612B2Method of forming metal wiring layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 30, 2008·13 cites·14 claims
- 1085US7244645B2Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers and related structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 17, 2007·10 cites·20 claims
- 1185US7148100B2Methods of forming electronic devices including high-k dielectric layers and electrode barrier layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 12, 2006·30 cites·7 claims
- 1283US8304343B2Method of manufacturing a metal wiring structureCHOI KYUNG-IN·Filed 2011·Granted Nov 6, 2012·6 cites·22 claims
- 1380US8124524B2Methods of forming metal interconnection structuresCHOI KYUNG-IN·Filed 2010·Granted Feb 28, 2012·5 cites·9 claims
- 1474US9401428B2Semiconductor devices including gate pattern, multi-channel active pattern and diffusion layerCHOI KYUNG-IN·Filed 2013·Granted Jul 26, 2016·3 cites·24 claims
- 1574US7816255B2Methods of forming a semiconductor device including a diffusion barrier filmSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 19, 2010·6 cites·7 claims
- 1671US9911809B2Semiconductor device having impurity regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 6, 2018·1 cites·20 claims
- 1769US8053374B2Method of manufacturing a metal wiring structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·3 cites·11 claims
- 1869US7067420B2Methods for forming a metal layer on a semiconductorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 27, 2006·12 cites·27 claims
- 1969US2024372002A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2068US11735663B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2166US7541282B2Methods of forming metal-nitride layers in contact holesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 2, 2009·2 cites·31 claims
- 2266US7189641B2Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 13, 2007·8 cites·17 claims
- 2365US11233150B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·35 claims
- 2463US7807571B2Semiconductor device and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 5, 2010·2 cites·31 claims
- 2562US12080796B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 2662US8211793B2Structures electrically connecting aluminum and copper interconnections and methods of forming the sameLEE JONG-MYEONG·Filed 2010·Granted Jul 3, 2012·2 cites·20 claims
- 2762US7759248B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 20, 2010·1 cites·17 claims
- 2861US7105444B2Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 12, 2006·6 cites·53 claims
- 2956US10164017B2Method of forming a semiconductor device having impurity regionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 25, 2018·0 cites·20 claims
- 3056US6876078B2Semiconductor interconnection structure with TaN and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 5, 2005·5 cites·9 claims
- 3152US12512315B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 3251US2009081863A1Method of forming metal wiring layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3351US2012226185A1Readiness potential-based brain-computer interface device and methodCHUNG CHUN KEE·Filed 2011·Application pending·0 cites
- 3451US2007128866A1Apparatus for fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devicesLEE SANG-WOO·Filed 2007·Application pending·0 cites
- 3550US12230630B2Semiconductor devices having highly integrated sheet and wire patterns thereinSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 3650US10141427B2Methods of manufacturing semiconductor devices including gate pattern, multi-channel active pattern and diffusion layerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 27, 2018·0 cites·20 claims
- 3750US2008122076A1Conductive Wiring for Semiconductor DevicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3850US2024105773A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3950US2006251812A1Methods for forming atomic layers and thin films including a tantalum amine derivative and devices including the sameKANG SANG-BOM·Filed 2006·Application pending·0 cites
- 4050US2023108041A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4149US2008012134A1Metal interconnection structures and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4246US2005136652A1Semiconductor interconnection structure with TaN and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4345US9812559B2FINFET semiconductor devices and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 7, 2017·0 cites·19 claims
- 4445US2008174021A1Semiconductor devices having metal interconnections, semiconductor cluster tools used in fabrication thereof and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4545US2009166868A1Semiconductor devices including metal interconnections and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4644US2010237504A1Methods of Fabricating Semiconductor Devices Having Conductive Wirings and Related Flash Memory DevicesHONG JONG-WON·Filed 2010·Application pending·0 cites
- 4743US2004224506A1Methods of forming metal layers using metallic precursorsFiled 2004·Application pending·0 cites
- 4843US2008042290A1Structures Electrically Connecting Aluminum and Copper Interconnections and Methods of Forming the SameLEE JONG-MYEONG·Filed 2007·Application pending·0 cites
- 4940US2003017697A1Methods of forming metal layers using metallic precursorsFiled 2002·Application pending·0 cites
- 5039US2004245635A1Methods for forming contacts in semiconductor devices having local silicide regions and semiconductor devices formed therebyFiled 2004·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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