Methods for forming atomic layers and thin films including a tantalum amine derivative and devices including the same

Abstract

Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR 1 )(NR 2 R 3 ) 3 , wherein R 1 , R 2 and R 3 are each independently H or a C 1 -C 6 alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.

1 . A method of forming a thin film comprising: 
 mixing a tantalum amine derivative having a formula: Ta(NR 1 )(NR 2 R 3 ), wherein R 1 , R 2  and R 3  are each independently H or a C 1 -C 6  alkyl functional group, with a reacting gas comprising hydrogen (H 2 ), ammonia (NH 3 ), silane (SiH 4 ), disilane (Si 2 H 6 ) or a combination thereof to form a mixture; and    depositing the mixture on a substrate.    
   
   
       2 . The method of  claim 1 , wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ).  
   
   
       3 . The method of  claim 1 , wherein the reactant excludes a halogen component.  
   
   
       4 . The method of  claim 1 , wherein depositing the mixture is performed by a chemical vapor deposition (CVD) process.  
   
   
       5 . The method of  claim 1 , wherein depositing the mixture is performed by a thermal chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process.  
   
   
       6 . The method of  claim 1 , wherein the method further comprises mixing an inert gas with the tantalum amine derivative.  
   
   
       7 . The method of  claim 6 , wherein the inert gas comprises argon (Ar), helium (He), nitrogen (N 2 ) or a combination thereof:  
   
   
       8 . The method of  claim 1 , wherein the reacting gas comprises activated hydrogen (H 2 ), activated ammonia (NH 3 ), activated silane (SiH 4 ), activated disilane (Si 2 H 6 ) or a combination thereof  
   
   
       9 . The method of  claim 8 , wherein the activated reacting gas is obtained by a remote plasma process.  
   
   
       10 . The method of  claim 1 , wherein the thin film comprises a tantalum nitride (TaN).  
   
   
       11 . The method of  claim 1 , wherein depositing the mixture is carried out at a temperature of about 100° C. to about 550° C.  
   
   
       12 . The method of  claim 1 , wherein depositing the mixture is carried out at a temperature of about 150° C. to about 300° C.  
   
   
       13 . A method of forming a thin film comprising 
 forming an insulating layer on a substrate including therein an opening exposing a surface portion of the substrate; and    introducing a tantalum amine derivative as a reactant onto the insulating layer having the opening with a reacting gas comprising hydrogen (H 2 ), ammonia (NH 3 ), silane (SiH 4 ), disilane (Si 2 H 6 ) or combinations thereof to form a tantalum nitride (TaN) thin film, wherein the tantalum amine derivative has a formula Ta(NR 1 )(NR 2 R 3 ), wherein R 1 , R 2  and R 3  are each independently H or a C 1 -C 6  alkyl functional group.    
   
   
       14 . The method of  claim 13 , wherein the reactant excludes a halogen component.  
   
   
       15 . The method of  claim 13 , wherein the method is performed at a temperature of about 100° C. to about 350° C.  
   
   
       16 . The method of  claim 13 , wherein an inert gas comprising argon (Ar), helium (He), nitrogen (N 2 ) or a combination thereof is additionally mixed with the reactant.  
   
   
       17 . The method of  claim 13 , wherein an aspect ratio of the opening is above about 10:1.  
   
   
       18 . An atomic layer formed by the method of  claim 1 .  
   
   
       19 . A thin film formed by the method of  claim 1 .  
   
   
       20 . An atomic layer thin film formed by the method of  claim 13 .  
   
   
       21 . A thin film formed by the method of  claim 13 .  
   
   
       22 . A semiconductor device comprising the thin film formed by the method of  claim 19.