Semiconductor interconnection structure with TaN and method of forming the same

Abstract

A structure includes a diffusion barrier layer pattern, a conductive layer pattern, an adhesion layer pattern, and a tantalum nitride layer pattern that are sequentially stacked over a semiconductor substrate. According to the method of forming the structure, a tantalum nitride layer is formed by using a PVD, CVD, or ALD process and patterned to form a tantalum nitride layer pattern. The structure and the method prevents process failures such as ring defects, simplifies associated processes, and allows relatively easy exposure of only an anti-refractive layer when forming a via hole in the structure.

1 . A method of forming a semiconductor interconnection structure, comprising: 
 forming a diffusion barrier layer over a semiconductor substrate;    forming a conductive layer on the diffusion barrier layer;    forming an adhesion layer on the conductive layer;    forming a tantalum nitride layer on the adhesion layer; and    sequentially patterning the tantalum nitride layer, the adhesion layer, the conductive layer, and the diffusion barrier layer to form a sequentially stacked interconnection including a diffusion barrier layer pattern, a conductive layer pattern, and adhesion layer pattern, and a tantalum nitride layer pattern.    
   
   
       2 . The method as claimed in  claim 1 , further comprising forming an interlayer dielectric layer on the semiconductor substrate before forming the diffusion barrier layer.  
   
   
       3 . The method as claimed in  claim 1 , wherein forming a tantalum nitride layer comprises forming a tantalum nitride layer by physical vapor deposition.  
   
   
       4 . The method as claimed in  claim 9 , wherein forming a tantalum nitride layer comprises forming a tantalum nitride layer by chemical vapor deposition.  
   
   
       5 . The method as claimed in  claim 1 , wherein forming a tantalum nitride layer comprises forming a tantalum nitride layer by atomic layer deposition.  
   
   
       6 . The method as claimed in  claim 1 , further comprising, when forming a tantalum nitride layer, supplying ammonia (NH3) and a material selected from the group consisting of terbutylimido-tris-diethyl amino tantalum (TBTDET), pentadimetylamio-tatalum (PDMAT), pentaethylmetylamino-tantalum (PEMAT), TaF 5 , TaCl 5 , TaBr 5 , and Tal 5 .  
   
   
       7 . The method as claimed in  claim 1 , wherein sequentially patterning the tantalum nitride layer, the adhesion layer, the conductive layer and the diffusion barrier layer comprises: 
 patterning the tantalum nitride layer to form a tantalum nitride layer pattern; and successively patterning the adhesion layer, the conductive layer and the diffusion barrier layer by using the tantalum nitride layer pattern as a hard mask.    
   
   
       8 . The method as claimed in  claim 1 , wherein forming a conductive layer comprises forming an aluminum conductive layer.  
   
   
       9 . The method as claimed in  claim 1 , wherein forming a conductive layer comprises forming a tungsten conductive layer.  
   
   
       10 . The method as claimed in  claim 1 , wherein forming an adhesion layer comprises forming a titanium layer.  
   
   
       11 . The method as claimed in  claim 1 , wherein forming an adhesion layer comprises forming a tantalum layer.  
   
   
       12 . The method as claimed in  claim 1 , further comprising forming an intermetal dielectric layer to cover the interconnection.  
   
   
       13 . The method as claimed in  claim 12 , further comprising forming a via hole through the intermetal dielectric layer to expose the tantalum nitride layer pattern.