Inventor · disambiguated record
Zong-Liang Huo
Also filed as: HUO ZONG-LIANG
10 granted patents·4 pending applications·124 citations·filing 2005–2011
89Inventor score
Top patents by PatentIndex Score
14 records- 0195US7338862B2Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 4, 2008·40 cites·14 claims
- 0294US7368788B2SRAM cells having inverters and access transistors therein with vertical fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 6, 2008·33 cites·7 claims
- 0388US8084316B2Method of fabricating single transistor floating-body DRAM devices having vertical channel transistor structuresHUO ZONG-LIANG·Filed 2006·Granted Dec 27, 2011·18 cites·12 claims
- 0488US7982256B2Semiconductor memory device having DRAM cell mode and non-volatile memory cell mode and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 19, 2011·14 cites·18 claims
- 0576US8269268B2Charge trap flash memory device and memory card and system including the sameHUO ZONG-LIANG·Filed 2008·Granted Sep 18, 2012·7 cites·12 claims
- 0673US8405137B2Single transistor floating-body DRAM devices having vertical channel transistor structuresHUO ZONG-LIANG·Filed 2011·Granted Mar 26, 2013·3 cites·12 claims
- 0764US7384841B2DRAM device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 10, 2008·5 cites·11 claims
- 0862US7795659B2DRAM device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·4 cites·15 claims
- 0961US2008169501A1Flash memory device with hybrid structure charge trap layer and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1046US7994003B2Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 9, 2011·0 cites·9 claims
- 1146US2008128802A1Single transistor floating body dram cell having recess channel transistor structureHUO ZONG-LIANG·Filed 2008·Application pending·0 cites
- 1244US2011267903A1Semiconductor memory device having dram cell mode and non-volatile memory cell mode and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2011·Application pending·0 cites
- 1340US7274066B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·0 cites·10 claims
- 1439US2007007576A1Multi-bit storageable non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →