Inventor · disambiguated record
Jick Yu
Also filed as: YU JICK · YU JICK M
29 granted patents·17 pending applications·961 citations·filing 1984–2014
97Inventor score
Top patents by PatentIndex Score
46 records- 0198US7049226B2Integration of ALD tantalum nitride for copper metallizationAPPLIED MATERIALS INC·Filed 2004·Granted May 23, 2006·514 cites·55 claims
- 0297US7265048B2Reduction of copper dewetting by transition metal depositionAPPLIED MATERIALS INC·Filed 2005·Granted Sep 4, 2007·47 cites·33 claims
- 0393US6936906B2Integration of barrier layer and seed layerAPPLIED MATERIALS INC·Filed 2001·Granted Aug 30, 2005·56 cites·31 claims
- 0492US8324095B2Integration of ALD tantalum nitride for copper metallizationCHUNG HUA·Filed 2009·Granted Dec 4, 2012·18 cites·15 claims
- 0591US8580354B2Plasma treatment of substrates prior to depositionFU XINYU·Filed 2011·Granted Nov 12, 2013·11 cites·5 claims
- 0691US7737028B2Selective ruthenium deposition on copper materialsAPPLIED MATERIALS INC·Filed 2008·Granted Jun 15, 2010·21 cites·21 claims
- 0790US7494908B2Apparatus for integration of barrier layer and seed layerAPPLIED MATERIALS INC·Filed 2007·Granted Feb 24, 2009·12 cites·28 claims
- 0889US8021514B2Remote plasma source for pre-treatment of substrates prior to depositionAPPLIED MATERIALS INC·Filed 2007·Granted Sep 20, 2011·10 cites·19 claims
- 0989US7352048B2Integration of barrier layer and seed layerAPPLIED MATERIALS INC·Filed 2005·Granted Apr 1, 2008·11 cites·24 claims
- 1085US7704887B2Remote plasma pre-clean with low hydrogen pressureAPPLIED MATERIALS INC·Filed 2006·Granted Apr 27, 2010·10 cites·15 claims
- 1185US4587138AMOS rear end processingINTEL CORP·Filed 1984·Granted May 6, 1986·75 cites·7 claims
- 1284US7294574B2Sputter deposition and etching of metallization seed layer for overhang and sidewall improvementAPPLIED MATERIALS INC·Filed 2004·Granted Nov 13, 2007·36 cites·40 claims
- 1374US7659204B2Oxidized barrier layerAPPLIED MATERIALS INC·Filed 2007·Granted Feb 9, 2010·4 cites·11 claims
- 1471US8349724B2Method for improving electromigration lifetime of copper interconnection by extended post annealAPPLIED MATERIALS INC·Filed 2009·Granted Jan 8, 2013·4 cites·23 claims
- 1570US8119525B2Process for selective growth of films during ECP platingYU JICK M·Filed 2008·Granted Feb 21, 2012·5 cites·20 claims
- 1667US6887786B2Method and apparatus for forming a barrier layer on a substrateAPPLIED MATERIALS INC·Filed 2003·Granted May 3, 2005·9 cites·20 claims
- 1767US6884329B2Diffusion enhanced ion plating for copper fillAPPLIED MATERIALS INC·Filed 2003·Granted Apr 26, 2005·10 cites·34 claims
- 1864US6899796B2Partially filling copper seed layerAPPLIED MATERIALS INC·Filed 2003·Granted May 31, 2005·8 cites·26 claims
- 1964US4620986AMOS rear end processingINTEL CORP·Filed 1985·Granted Nov 4, 1986·33 cites·9 claims
- 2063US5693564AConductor fill reflow with intermetallic compound wetting layer for semiconductor fabricationINTEL CORP·Filed 1994·Granted Dec 2, 1997·30 cites·20 claims
- 2160US8852674B2Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layersFU XINYU·Filed 2010·Granted Oct 7, 2014·1 cites·18 claims
- 2259US8557094B2Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalumTANG XIANMIN·Filed 2007·Granted Oct 15, 2013·1 cites·10 claims
- 2353US5804251ALow temperature aluminum alloy plug technologyINTEL CORP·Filed 1997·Granted Sep 8, 1998·19 cites·20 claims
- 2451US2006148253A1Integration of ALD tantalum nitride for copper metallizationAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2550US2007051622A1Simultaneous ion milling and sputter depositionAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2648US2005189217A1Method and apparatus for forming a barrier layer on a substrateAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2747US2010099251A1Method for nitridation pretreatmentAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2845US2008190760A1Resputtered copper seed layerAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2944US6365514B1Two chamber metal reflow processINTEL CORP·Filed 1997·Granted Apr 2, 2002·11 cites·26 claims
- 3044US2014374907A1Ultra-thin copper seed layer for electroplating into small featuresAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 3144US2007059502A1Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layerAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3243US2004229459A1Integration of annealing capability into metal deposition or CMP toolFiled 2004·Application pending·0 cites
- 3342US8993434B2Methods for forming layers on a substrateYU JICK M·Filed 2011·Granted Mar 31, 2015·0 cites·19 claims
- 3442US2007209925A1Etch and sidewall selectivity in plasma sputteringAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3542US2005252765A1Method and apparatus for forming a barrier layer on a substrateAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3641US9217197B2Methods for depositing a layer on a substrate using surface energy modulationYU JICK M·Filed 2011·Granted Dec 22, 2015·0 cites·18 claims
- 3741US8764961B2Cu surface plasma treatment to improve gapfill windowLUO QIAN·Filed 2008·Granted Jul 1, 2014·0 cites·18 claims
- 3841US2006251872A1Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereofWANG JENN Y·Filed 2005·Application pending·0 cites
- 3941US2013341794A1Ultra-thin copper seed layer for electroplating into small featuresYU JICK M·Filed 2013·Application pending·0 cites
- 4038US6730598B1Integration of annealing capability into metal deposition or CMP toolINTEL CORP·Filed 1999·Granted May 4, 2004·5 cites·35 claims
- 4138US2004222082A1Oblique ion milling of via metallizationAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 4237US2004055893A1Wafer backside electrical contact for electrochemical deposition and electrochemical mechanical polishingAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4337US2004152330A1Tunneling barrier for a copper damascene viaAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 4436US2003059538A1Integration of barrier layer and seed layerAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 4536US2003057526A1Integration of barrier layer and seed layerAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 4627US6746727B1Metal to ILD adhesion improvement by reactive sputteringINTEL CORP·Filed 1998·Granted Jun 8, 2004·0 cites·10 claims
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