US2004229459A1PendingUtilityA1

Integration of annealing capability into metal deposition or CMP tool

Priority: Dec 30, 1999Filed: Mar 25, 2004Published: Nov 18, 2004
Est. expiryDec 30, 2019(expired)· nominal 20-yr term from priority
Inventors:Jick Yu
H10P 72/0472C23C 16/56
43
PatentIndex Score
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Claims

Abstract

Integration of annealing capability into a metal deposition tool or a chemical mechanical polishing (CMP) tool. A wafer processing apparatus includes a metal deposition tool having annealing capability. The metal deposition tool can be an electroplating tool or a chemical vapor deposition tool or other metal deposition tool that deposits metal films, such as copper, onto silicon substrates for integrated circuit manufacturing. An annealing chamber is integrated into the metal deposition tool so that annealing of the metal film can be controlled such that the copper is consistently stabilized in preparation for a chemical mechanical polishing process. Alternatively, an annealing chamber can be integrated into a CMP tool.

Claims

exact text as granted — not AI-modified
1 . An apparatus comprising: 
 a metal deposition tool having annealing capability.    
     
     
         2 . The apparatus of  claim 1  further comprising an annealing chamber on said metal deposition tool.  
     
     
         3 . The apparatus of  claim 2  wherein said metal deposition tool is an electroplating tool.  
     
     
         4 . The apparatus of  claim 2  wherein said metal deposition tool is a chemical vapor deposition (CVD) tool.  
     
     
         5 . The apparatus of  claim 1  wherein said metal deposition tool has a plurality of metal deposition chambers, said metal deposition tool being modified to replace one of said metal deposition chambers with an annealing chamber.  
     
     
         6 . The apparatus of  claim 5  wherein said metal deposition tool is an electroplating tool and said metal deposition chamber is an electroplating chamber.  
     
     
         7 . The apparatus of  claim 5  wherein said metal deposition tool is a chemical vapor deposition (CVD) tool and said metal deposition chamber is a chemical vapor deposition (CVD) chamber.  
     
     
         8 . The apparatus of  claim 1  wherein said metal deposition tool includes at least one metal deposition chamber and an annealing chamber on said metal deposition tool.  
     
     
         9 . The apparatus of  claim 8  wherein said metal deposition tool is an electroplating tool and said metal deposition chamber is an electroplating chamber.  
     
     
         10 . The apparatus of  claim 8  wherein said metal deposition tool is a chemical vapor deposition (CVD) tool and said metal deposition chamber is a chemical vapor deposition (CVD) chamber.  
     
     
         11 . The apparatus of  claim 8  wherein said annealing chamber includes heat lamps.  
     
     
         12 . The apparatus of  claim 8  wherein said annealing chamber is a furnace.  
     
     
         13 . The apparatus of  claim 8  further comprising a robot, wherein said robot moves a wafer from said metal deposition chamber to said annealing chamber.  
     
     
         14 . An apparatus comprising: 
 an chemical mechanical polishing (CMP) tool having annealing capability.    
     
     
         15 . The apparatus of  claim 14  further comprising an annealing chamber on said CMP tool.  
     
     
         16 . The apparatus of  claim 14  wherein said CMP tool has a plurality of CMP platforms, said CMP tool being modified to replace one of said CMP platforms with an annealing chamber.  
     
     
         17 . The apparatus of  claim 14  wherein said CMP tool includes at least one CMP platform and an annealing chamber on said CMP tool.  
     
     
         18 . The apparatus of  claim 14  wherein said annealing chamber includes heat lamps.  
     
     
         19 . The apparatus of  claim 14  wherein said annealing chamber is a furnace.  
     
     
         20 . The apparatus of  claim 14  further comprising a robot, wherein said robot moves a wafer from said annealing chamber to said CMP platform.  
     
     
         21 .- 30 . (Cancelled)

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