Inventor · disambiguated record
Jeng-Ping Lin
Also filed as: LIN JENG-PING
33 granted patents·8 pending applications·330 citations·filing 1995–2024
97Inventor score
Files withNANYA TECHNOLOGY CORP31DELTA ELECTRONICS INC5HO HSIN-JUNG1LIN SHIAN-JYH1UNITED MICROELECTRONICS CORP1
Top patents by PatentIndex Score
41 records- 0197US11315928B2Semiconductor structure with buried power line and buried signal line and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Apr 26, 2022·4 cites·12 claims
- 0295US8343829B2Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the sameNANYA TECHNOLOGY CORP·Filed 2011·Granted Jan 1, 2013·24 cites·7 claims
- 0393US7994559B2Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Aug 9, 2011·23 cites·10 claims
- 0492US6734066B2Method for fabricating split gate flash memory cellNANYA TECHNOLOGY CORP·Filed 2002·Granted May 11, 2004·62 cites·33 claims
- 0582US6794250B2Vertical split gate flash memory cell and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Sep 21, 2004·25 cites·15 claims
- 0682US6432774B2Method of fabricating memory cell with trench capacitor and vertical transistorNANYA TECHNOLOGY CORP·Filed 2001·Granted Aug 13, 2002·30 cites·20 claims
- 0780US10090154B1Method for preparing a semiconductor structure having second line patterns and third line patterns formed over first line patternsNANYA TECHNOLOGY CORP·Filed 2017·Granted Oct 2, 2018·2 cites·9 claims
- 0880US6696717B2Memory cell with vertical transistor and trench capacitorNANYA TECHNOLOGY CORP·Filed 2002·Granted Feb 24, 2004·20 cites·17 claims
- 0979US6800895B2Vertical split gate flash memory cell and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2002·Granted Oct 5, 2004·21 cites·24 claims
- 1078US7541244B2Semiconductor device having a trench gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2006·Granted Jun 2, 2009·6 cites·6 claims
- 1178US6355529B2Method of fabricating memory cell with vertical transistorNANYA TECHNOLOGY CORP·Filed 2001·Granted Mar 12, 2002·23 cites·22 claims
- 1275US7678692B2Fabrication method for a damascene bit line contact plugNANYA TECHNOLOGY CORP·Filed 2006·Granted Mar 16, 2010·6 cites·16 claims
- 1374US7759190B2Memory device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2007·Granted Jul 20, 2010·4 cites·16 claims
- 1473US11002562B2Encoder using a magnetic sensing assembly and an optical sensing assembly and position detection method for a motorDELTA ELECTRONICS INC·Filed 2019·Granted May 11, 2021·1 cites·12 claims
- 1570US11647623B2Method for manufacturing semiconductor structure with buried power line and buried signal lineNANYA TECHNOLOGY CORP·Filed 2021·Granted May 9, 2023·0 cites·8 claims
- 1668US6534359B2Method of fabricating memory cellNANYA TECHNOLOGY CORP·Filed 2001·Granted Mar 18, 2003·13 cites·14 claims
- 1764US8395209B1Single-sided access device and fabrication method thereofHO HSIN-JUNG·Filed 2011·Granted Mar 12, 2013·2 cites·7 claims
- 1864US7144799B2Method for pre-retaining CB openingNANYA TECHNOLOGY CORP·Filed 2005·Granted Dec 5, 2006·3 cites·20 claims
- 1963US5536683AMethod for interconnecting semiconductor devicesUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jul 16, 1996·29 cites·22 claims
- 2060US2025264344A1Optical sensing assembly and encoderDELTA ELECTRONICS INC·Filed 2024·Application pending·0 cites
- 2159US6781181B2Layout of a folded bitline DRAM with a borderless bitlineNANYA TECHNOLOGY CORP·Filed 2003·Granted Aug 24, 2004·8 cites·1 claims
- 2259US2025264345A1Optical sensing assembly and encoderDELTA ELECTRONICS INC·Filed 2024·Application pending·0 cites
- 2356US6801462B2Device and method for detecting alignment of deep trench capacitors and word lines in DRAM devicesNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 5, 2004·5 cites·9 claims
- 2453US7109094B2Method for preventing leakage in shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2004·Granted Sep 19, 2006·4 cites·18 claims
- 2551US9779957B2Method of manufacturing independent depth-controlled shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2014·Granted Oct 3, 2017·0 cites·9 claims
- 2651US7622770B2Semiconductor device having a trench gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Nov 24, 2009·0 cites·4 claims
- 2751US2019027364A1Semiconductor structure and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2017·Application pending·0 cites
- 2850US10761507B2Instant correction method for encoder and system thereofDELTA ELECTRONICS INC·Filed 2019·Granted Sep 1, 2020·0 cites·13 claims
- 2950US6743717B1Method for forming silicide at source and drainNANYA TECHNOLOGY CORP·Filed 2003·Granted Jun 1, 2004·4 cites·20 claims
- 3049US7005698B2Split gate flash memory cellNANYA TECHNOLOGY CORP·Filed 2003·Granted Feb 28, 2006·3 cites·21 claims
- 3149US2007152263A1Dynamic random access memory cell layout and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 3248US6788598B2Test key for detecting overlap between active area and deep trench capacitor of a DRAM and detection method thereofNANYA TECHNOLOGY CORP·Filed 2003·Granted Sep 7, 2004·3 cites·8 claims
- 3347US6919245B2Dynamic random access memory cell layout and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2004·Granted Jul 19, 2005·2 cites·9 claims
- 3446US2014070359A1Semiconductor memory array structureLIN SHIAN-JYH·Filed 2012·Application pending·0 cites
- 3545US11342818B2Encoder, motor and controlling method of encoderDELTA ELECTRONICS INC·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 3645US6909136B2Trench-capacitor DRAM cell having a folded gate conductorNANYA TECHNOLOGY CORP·Filed 2003·Granted Jun 21, 2005·3 cites·9 claims
- 3741US7285377B2Fabrication method for a damascene bit line contact plugNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 23, 2007·0 cites·15 claims
- 3841US6958521B2Shallow trench isolation structureNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 25, 2005·0 cites·2 claims
- 3940US2007190712A1Semiconductor device having a trench gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2006·Application pending·0 cites
- 4039US2005045936A1Dynamic random access memory cell layout and fabrication method thereofFiled 2004·Application pending·0 cites
- 4134US2002005537A1DRAM with vertical transistors and deep trench capacitorsFiled 2001·Application pending·0 cites
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