Inventor · disambiguated record
Yueh Yale Ma
Also filed as: MA YUEH Y · MA YUEH YALE
17 granted patents·2 pending applications·1,209 citations·filing 1980–2012
96Inventor score
Files withWINBOND ELECTRONICS CORP4BRIGHT MICROELECTRONICS INC3TAI YING YU3HYUNDAI ELECTRONICS IND2HUGHES AIRCRAFT CO1
Top patents by PatentIndex Score
19 records- 0197US5280446AFlash eprom memory circuit having source side programmingBRIGHT MICROELECTRONICS INC·Filed 1992·Granted Jan 18, 1994·253 cites·5 claims
- 0296US5414693ASelf-aligned dual-bit split gate (DSG) flash EEPROM cellHYUNDAI ELECTRONICS IND·Filed 1994·Granted May 9, 1995·164 cites·3 claims
- 0395US8793543B2Adaptive read comparison signal generation for memory systemsTAI YING YU·Filed 2012·Granted Jul 29, 2014·21 cites·28 claims
- 0495US5278439ASelf-aligned dual-bit split gate (DSG) flash EEPROM cellMA YUEH Y·Filed 1991·Granted Jan 11, 1994·225 cites·8 claims
- 0594US9058289B2Soft information generation for memory systemsTAI YING YU·Filed 2012·Granted Jun 16, 2015·20 cites·41 claims
- 0693US5364806AMethod of making a self-aligned dual-bit split gate (DSG) flash EEPROM cellHYUNDAI ELECTRONICS IND·Filed 1993·Granted Nov 15, 1994·106 cites·3 claims
- 0790US5768186AHigh density single poly metal-gate non-volatile memory cellFiled 1996·Granted Jun 16, 1998·77 cites·19 claims
- 0887US6493262B1Method for operating nonvolatile memory cellsWINBOND ELECTRONICS CORP·Filed 2000·Granted Dec 10, 2002·51 cites·5 claims
- 0986US5663907ASwitch driver circuit for providing small sector sizes for negative gate erase flash EEPROMS using a standard twin-well CMOS processBRIGHT MICROELECTRONICS INC·Filed 1996·Granted Sep 2, 1997·77 cites·9 claims
- 1084US6211548B1Metal-gate non-volatile memory cellFiled 1998·Granted Apr 3, 2001·48 cites·25 claims
- 1183US6346725B1Contact-less array of fully self-aligned, triple polysilicon, source-side injection, nonvolatile memory cells with metal-overlaid wordlinesWINBOND ELECTRONICS CORP·Filed 1998·Granted Feb 12, 2002·45 cites·17 claims
- 1281US8938658B2Statistical read comparison signal generation for memory systemsTAI YING YU·Filed 2012·Granted Jan 20, 2015·6 cites·26 claims
- 1380US6798012B1Dual-bit double-polysilicon source-side injection flash EEPROM cellFiled 1999·Granted Sep 28, 2004·41 cites·28 claims
- 1478US6699753B2Method of fabricating an array of non-volatile memory cellsWINBOND ELECTRONICS CORP·Filed 2002·Granted Mar 2, 2004·19 cites·26 claims
- 1573US6714454B2Method of operation of a dual-bit double-polysilicon source-side injection flash EEPROM cellFiled 2002·Granted Mar 30, 2004·16 cites·16 claims
- 1670US5986941AProgramming current limiter for source-side injection EEPROM cellsBRIGHT MICROELECTRONICS INC·Filed 1997·Granted Nov 16, 1999·32 cites·3 claims
- 1736US4327477AElectron beam annealing of metal step coverageHUGHES AIRCRAFT CO·Filed 1980·Granted May 4, 1982·8 cites·4 claims
- 1836US2001021563A1Method of fabricating triple polysilicon non-volatile memory cellsFiled 2001·Application pending·0 cites
- 1930US2003071301A1Method for erasing a nonvolatile memory cell formed in a body region of a substrateWINBOND ELECTRONICS CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →