Inventor · disambiguated record
Naoki Kasai
Also filed as: KASAI NAOKI
32 granted patents·4 pending applications·888 citations·filing 1988–2024
98Inventor score
Top patents by PatentIndex Score
36 records- 0195US4951117AIsolation of insulated-gate field-effect transistorsNEC CORP·Filed 1988·Granted Aug 21, 1990·162 cites·5 claims
- 0294US6218197B1Embedded LSI having a FeRAM section and a logic circuit sectionNEC CORP·Filed 2000·Granted Apr 17, 2001·58 cites·9 claims
- 0393US6030894AMethod for manufacturing a semiconductor device having contact plug made of Si/SiGe/SiNEC CORP·Filed 1998·Granted Feb 29, 2000·131 cites·7 claims
- 0489US5905283AMethod of forming a MOS transistor having gate insulators of different thicknessesNEC CORP·Filed 1997·Granted May 18, 1999·67 cites·18 claims
- 0585US5811336AMethod of forming MOS transistors having gate insulators of different thicknessesNEC CORP·Filed 1995·Granted Sep 22, 1998·57 cites·5 claims
- 0684US6768151B2Semiconductor memory device with memory cells having same characteristics and manufacturing method for the sameNEC CORP·Filed 2003·Granted Jul 27, 2004·22 cites·15 claims
- 0778US6465826B2Embedded LSI having a FeRAM section and a logic circuit sectionNEC CORP·Filed 2001·Granted Oct 15, 2002·16 cites·10 claims
- 0874US6348408B1Semiconductor device with reduced number of intermediate level interconnection pattern and method of forming the sameNEC CORP·Filed 2000·Granted Feb 19, 2002·18 cites·27 claims
- 0973US5909059ASemiconductor device having contact plug and method for manufacturing the sameNEC CORP·Filed 1997·Granted Jun 1, 1999·37 cites·8 claims
- 1070US5907788ASemiconductor device capable of easily filling contact conductor plug in contact holeNEC CORP·Filed 1998·Granted May 25, 1999·39 cites·4 claims
- 1168US5856938ASmall-sized multi-valued semiconductor memory device with coupled capacitors between divided bit linesNEC CORP·Filed 1997·Granted Jan 5, 1999·27 cites·36 claims
- 1267US5912509AMOS semiconductor device and method of manufacturing the sameNEC CORP·Filed 1997·Granted Jun 15, 1999·22 cites·5 claims
- 1367US5821594ASemiconductor device having a self-aligned type contact holeNEC CORP·Filed 1997·Granted Oct 13, 1998·29 cites·12 claims
- 1466US6235575B1Semiconductor device and method for manufacturing sameNEC CORP·Filed 1999·Granted May 22, 2001·31 cites·6 claims
- 1565US5895948ASemiconductor device and fabrication process thereofNEC CORP·Filed 1997·Granted Apr 20, 1999·32 cites·14 claims
- 1656US12282061B2Wafer test system, probe card replacing method, and proberTOKYO SEIMITSU CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·11 claims
- 1754US5973371ASemiconductor device with marginless contact holeNEC CORP·Filed 1997·Granted Oct 26, 1999·13 cites·8 claims
- 1853US5840621AMethod for manufacturing contact structure capable of avoiding short-circuitNEC CORP·Filed 1997·Granted Nov 24, 1998·16 cites·6 claims
- 1953US5760600ATest device for insulated-gate field effect transistor and testing circuit and testing method using the sameNEC CORP·Filed 1997·Granted Jun 2, 1998·18 cites·5 claims
- 2052US7848137B2MRAM and data read/write method for MRAMNEC CORP·Filed 2007·Granted Dec 7, 2010·2 cites·24 claims
- 2152US5654236AMethod for manufacturing contact structure capable of avoiding short-circuitNEC CORP·Filed 1995·Granted Aug 5, 1997·16 cites·5 claims
- 2249US6448597B1DRAM having a stacked capacitor and a method for fabricating the sameNEC CORP·Filed 1999·Granted Sep 10, 2002·11 cites·11 claims
- 2346US6653690B1Semiconductor device comprising high density integrated circuit having a large number of insulated gate field effect transistorsNEC ELECTRONICS CORP·Filed 1998·Granted Nov 25, 2003·13 cites·9 claims
- 2445US6300647B1Characteristic-evaluating storage capacitorsNEC CORP·Filed 1999·Granted Oct 9, 2001·12 cites·17 claims
- 2542US6352891B1Method of manufacturing semiconductor device in which hot carrier resistance can be improved and silicide layer can be formed with high reliabilityNEC CORP·Filed 1999·Granted Mar 5, 2002·6 cites·7 claims
- 2642US5381030ASemiconductor memory device with improved step protection and manufacturing method thereofNEC CORP·Filed 1994·Granted Jan 10, 1995·8 cites·4 claims
- 2740US6255218B1Semiconductor device and fabrication method thereofNEC CORP·Filed 1999·Granted Jul 3, 2001·8 cites·6 claims
- 2840US6190987B1MOS semiconductor device and method of manufacturing the sameNEC CORP·Filed 1999·Granted Feb 20, 2001·5 cites·3 claims
- 2939US2002056919A1Semiconductor device with reduced number of intermediate interconnection pattern and method of forming the sameNEC CORP·Filed 2002·Application pending·0 cites
- 3037US5946570AProcess for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layerNEC CORP·Filed 1997·Granted Aug 31, 1999·4 cites·12 claims
- 3137US2002173111A1Semiconductor memory device with memory cells having same characteristics and manufacturing method for the sameNEC CORP·Filed 2002·Application pending·0 cites
- 3237US2006049430A1Field-effect transistor, complementary field-effect transistor, and method of manufacturing field-effect transistorNEC CORP·Filed 2005·Application pending·0 cites
- 3336US5913121AMethod of making a self-aligning type contact hole for a semiconductor deviceNEC CORP·Filed 1997·Granted Jun 15, 1999·5 cites·10 claims
- 3434US2017262044A1Information processing device, information processing method, and recording mediumNEC CORP·Filed 2015·Application pending·0 cites
- 3531US6034384ASemiconductor memory device having memory cells similarly layouted and peripheral circuits symmetrically layouted in memory cell arraysNEC CORP·Filed 1998·Granted Mar 7, 2000·1 cites·14 claims
- 3631US5968692AIntegrated circuit pattern lithography method capable of reducing the number of shots in partial batch exposureNEC CORP·Filed 1998·Granted Oct 19, 1999·2 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →