Semiconductor device with reduced number of intermediate interconnection pattern and method of forming the same

Abstract

The present invention also provides a multilevel interconnection structure comprising: at least a set of a first lower level contact plug extending in a lower level inter-layer insulator structure and a first higher level contact plug extending in a higher level inter-layer insulator structure extending over the lower level inter-layer insulator structure, wherein a top of the first lower level contact plug is contact directly with a bottom of the first higher level contact plug without intervening any interconnection pad; a stopper insulating film extending between the lower level inter-layer insulator structure and the higher level inter-layer insulator structure; and at least a lower-level single conductive united structure which further comprises: a second lower level contact plug extending in the lower level inter-layer insulator structure; and a first lower level interconnection extending in a lower-level interconnection groove formed in an upper region of the lower level inter-layer insulator structure, wherein a top surface of the first lower level interconnection is leveled to a top surface of the lower level inter-layer insulator structure and also leveled to the top of the first lower level contact plug.

What is claimed is:  
     
         1 . A multilevel interconnection structure comprising: 
 at least a set of a first lower level contact plug extending in a lower level inter-layer insulator structure and a first higher level contact plug extending in a higher level inter-layer insulator structure extending over said lower level inter-layer insulator structure,    wherein a top of said first lower level contact plug is contact directly with and is aligned to a bottom of said first higher level contact plug without intervening any interconnection pad.    
     
     
         2 . The multilevel interconnection structure as claimed in  claim 1 , wherein said first higher level contact plug is larger in diameter than said first lower level contact plug.  
     
     
         3 . The multilevel interconnection structure as claimed in  claim 1 , wherein said first lower level contact plug is connected directly with a first semiconductor device formed on a semiconductor substrate, on which said lower level inter-layer insulator structure is provided.  
     
     
         4 . The multilevel interconnection structure as claimed in  claim 3 , further comprising: a first upper-level interconnection connected directly with a top of said first higher level contact plug.  
     
     
         5 . The multilevel interconnection structure as claimed in  claim 4 , wherein said first upper-level interconnection extends over a top surface of said higher level inter-layer insulator structure.  
     
     
         6 . The multilevel interconnection structure as claimed in  claim 4 , wherein said first upper-level interconnection extends in a first upper-level interconnection groove formed in a first upper region of said higher level inter-layer insulator structure, so that a top surface of said first upper-level interconnection is leveled to a top surface of said higher level inter-layer insulator structure.  
     
     
         7 . The multilevel interconnection structure as claimed in  claim 1 , further comprising a stopper insulating film extending between said lower level inter-layer insulator structure and said higher level inter-layer insulator structure.  
     
     
         8 . The multilevel interconnection structure as claimed in  claim 7 , further comprising: at least a lower-level single conductive united structure which further comprises: 
 a second lower level contact plug extending in said lower level inter-layer insulator structure; and    a first lower level interconnection extending in a lower-level interconnection groove formed in an upper region of said lower level inter-layer insulator structure,    wherein a top surface of said first lower level interconnection is leveled to a top surface of said lower level inter-layer insulator structure and also leveled to said top of said first lower level contact plug.    
     
     
         9 . The multilevel interconnection structure as claimed in  claim 8 , further comprising: 
 a second upper-level contact plug extending in said upper level inter-layer insulator structure, a bottom of said second upper-level contact plug being connected directly with a part of a top surface of said first lower level interconnection; and    a second upper-level interconnection connected directly with a part of a top of said second upper-level contact plug.    
     
     
         10 . The multilevel interconnection structure as claimed in  claim 9 , wherein said second upper-level interconnection extends over a top surface of said higher level inter-layer insulator structure.  
     
     
         11 . The multilevel interconnection structure as claimed in  claim 9 , wherein said second upper-level interconnection extends in a second upper-level interconnection groove formed in a second upper region of said higher level inter-layer insulator structure, so that a top surface of said second upper-level interconnection is leveled to a top surface of said higher level inter-layer insulator structure.  
     
     
         12 . A multilevel interconnection structure comprising: 
 at least a set of a first lower level contact plug extending in a lower level inter-layer insulator structure and a first higher level contact plug extending in a higher level inter-layer insulator structure extending over said lower level inter-layer insulator structure;    a stopper insulating film extending between said lower level inter-layer insulator structure and said higher level inter-layer insulator structure; and    at least a lower-level single conductive united structure which further comprises: a second lower level contact plug extending in said lower level inter-layer insulator structure; and a first lower level interconnection extending in a lower-level interconnection groove formed in an upper region of said lower level inter-layer insulator structure,    wherein a top of said first lower level contact plug is contact directly with and aligned to a bottom of said first higher level contact plug without intervening any interconnection pad, and    wherein a top surface of said first lower level interconnection is leveled to a top surface of said lower level inter-layer insulator structure and also leveled to said top of said first lower level contact plug.    
     
     
         13 . The multilevel interconnection structure as claimed in  claim 12 , wherein said first higher level contact plug is larger in diameter than said first lower level contact plug.  
     
     
         14 . The multilevel interconnection structure as claimed in  claim 12 , wherein said first lower level contact plug is connected directly with a first semiconductor device formed on a semiconductor substrate, on which said lower level inter-layer insulator structure is provided.  
     
     
         15 . The multilevel interconnection structure as claimed in  claim 14 , further comprising: a first upper-level interconnection connected directly with a top of said first higher level contact plug.  
     
     
         16 . The multilevel interconnection structure as claimed in  claim 15 , wherein said first upper-level interconnection extends over a top surface of said higher level inter-layer insulator structure.  
     
     
         17 . The multilevel interconnection structure as claimed in  claim 16 , wherein said first upper-level interconnection extends in a first upper-level interconnection groove formed in a first upper region of said higher level inter-layer insulator structure, so that a top surface of said first upper-level interconnection is leveled to a top surface of said higher level inter-layer insulator structure.  
     
     
         18 . The multilevel interconnection structure as claimed in  claim 12 , further comprising: 
 a second upper-level contact plug extending in said upper level inter-layer insulator structure, a bottom of said second upper-level contact plug being connected directly with a part of a top surface of said first lower level interconnection; and    a second upper-level interconnection connected directly with a part of a top of said second upper-level contact plug.    
     
     
         19 . The multilevel interconnection structure as claimed in  claim 18 , wherein said second upper-level interconnection extends over a top surface of said higher level inter-layer insulator structure.  
     
     
         20 . The multilevel interconnection structure as claimed in  claim 18 , wherein said second upper-level interconnection extends in a second upper-level interconnection groove formed in a second upper region of said higher level inter-layer insulator structure, so that a top surface of said second upper-level interconnection is leveled to a top surface of said higher level inter-layer insulator structure.  
     
     
         21 . A multilevel interconnection structure comprising: 
 at least a set of a first lower level contact plug extending in a lower level inter-layer insulator structure and a first higher level contact plug extending in a higher level inter-layer insulator structure extending over said lower level inter-layer insulator structure, wherein a top of said first lower level contact plug is contact directly with and is aligned to a bottom of said first higher level contact plug without intervening any interconnection pad;    a stopper insulating film extending between said lower level inter-layer insulator structure and said higher level inter-layer insulator structure;    at least a lower-level single conductive united structure which further comprises: a second lower level contact plug extending in said lower level inter-layer insulator structure; and a first lower level interconnection extending in a lower-level interconnection groove formed in an upper region of said lower level inter-layer insulator structure, wherein a top surface of said first lower level interconnection is leveled to a top surface of said lower level inter-layer insulator structure and also leveled to said top of said first lower level contact plug;    a first upper-level interconnection connected directly with a top of said first higher level contact plug;    a second upper-level contact plug extending in said upper level inter-layer insulator structure, a bottom of said second upper-level contact plug being connected directly with a part of a top surface of said first lower level interconnection; and    a second upper-level interconnection connected directly with a part of a top of said second upper-level contact plug.