Inventor · disambiguated record
Siddha Pimputkar
Also filed as: PIMPUTKAR SIDDHA
5 granted patents·14 pending applications·4 citations·filing 2009–2024
67Inventor score
Top patents by PatentIndex Score
19 records- 0170US8574525B2Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystalsPIMPUTKAR SIDDHA·Filed 2009·Granted Nov 5, 2013·3 cites·5 claims
- 0269US11885018B2High pressure spatial chemical vapor deposition system and related processUNIV LEHIGH·Filed 2019·Granted Jan 30, 2024·1 cites·22 claims
- 0368US12473642B2High pressure spatial chemical vapor deposition system and related processUNIV LEHIGH·Filed 2024·Granted Nov 18, 2025·0 cites·19 claims
- 0456US9133564B2Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each otherPIMPUTKAR SIDDHA·Filed 2011·Granted Sep 15, 2015·0 cites·31 claims
- 0555US8641823B2Reactor designs for use in ammonothermal growth of group-III nitride crystalsPIMPUTKAR SIDDHA·Filed 2009·Granted Feb 4, 2014·0 cites·21 claims
- 0654US2016194781A1Reactor vessels for ammonothermal and flux-based growth of group-iii nitride crystalsUNIV CALIFORNIA·Filed 2014·Application pending·0 cites
- 0751US2014116326A1Reactor designs for use in ammonothermal growth of group-iii nitride crystalsUNIV CALIFORNIA·Filed 2014·Application pending·0 cites
- 0851US2012103419A1Group-iii nitride solar cells grown on high quality group-iii nitride crystals mounted on foreign materialPIMPUTKAR SIDDHA·Filed 2011·Application pending·0 cites
- 0950US2013340672A1Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystalsUNIV CALIFORNIA·Filed 2013·Application pending·0 cites
- 1049US2013263775A1Apparatus used for the growth of group-iii nitride crystals utilizing carbon fiber containing materials and group-iii nitride grown therewithUNIV CALIFORNIA·Filed 2013·Application pending·0 cites
- 1149US2010111808A1Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the sameUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 1248US2011300051A1Group-iii nitride monocrystal with improved purity and method of producing the sameKAMBER DERRICK S·Filed 2009·Application pending·0 cites
- 1348US2011212013A1Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystalsUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 1448US2011203514A1Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystalsUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 1548US2011209659A1Controlling relative growth rates of different exposed crystallographic facets of a group-iii nitride crystal during the ammonothermal growth of a group-iii nitride crystalUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 1647US2013183225A1Crystal growth using non-thermal atmospheric pressure plasmasUNIV CALIFORNIA·Filed 2013·Application pending·0 cites
- 1747US2013099180A1Use of alkaline-earth metals to reduce impurity incorporation into a group-iii nitride crystal grown using the ammonothermal methodUNIV CALIFORNIA·Filed 2012·Application pending·0 cites
- 1847US2013015560A1Growth of bulk group-iii nitride crystals after coating them with a group-iii metal and an alkali metalUNIV CALIFORNIA·Filed 2012·Application pending·0 cites
- 1935US2012063987A1Group-iii nitride crystal ammonothermally grown using an initially off-oriented non-polar or semi-polar growth surface of a group-iii nitride seed crystalPIMPUTKAR SIDDHA·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →