Reactor designs for use in ammonothermal growth of group-iii nitride crystals

Abstract

Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.

What is claimed is: 
     
         1 . An apparatus for growing one or more crystals, comprising:
 (a) a vessel including a first zone containing source materials and a second zone containing seed crystals, wherein the reaction vessel is filled with a solvent for dissolving the source materials in the first zone and transporting the dissolved source materials to the seed crystals in the second zone for growth of the crystals; and   (b) at least one baffle positioned within the vessel and having a plurality of openings configured to control a flow of a fluid comprised of the solvent and the dissolved source materials therein between the first and second zones, wherein the openings in the baffle control motion patterns for the fluid through the baffle.   
     
     
         2 . The apparatus of  claim 1 , wherein the source materials comprise group-III containing source materials, the seed crystals comprise group-III nitride seed crystals, the solvent comprises a nitrogen-containing solvent, and the crystals comprise group-III nitride crystals. 
     
     
         3 . The apparatus of  claim 1 , wherein the baffle establishes a circular motion of the fluid within the vessel. 
     
     
         4 . The apparatus of  claim 1 , wherein the fluid enters the baffle through one or more of the openings near an outer edge of the baffle and the fluid exits the baffle through one or more of the openings in a region that is closer to a center of the baffle. 
     
     
         5 . The apparatus of  claim 1 , wherein the fluid enters the baffle through one or more of the openings in a region that is closer to a center of the baffle and the fluid exits the baffle through one or more of the openings closer nearer to an outer edge of the baffle. 
     
     
         6 . The apparatus of  claim 1 , wherein the openings redirect the fluid through the baffle. 
     
     
         7 . The apparatus of  claim 1 , wherein the baffle suppresses nucleation and growth on undesired locations or surfaces within the vessel, and enhances growth on desired locations or surfaces within the vessel. 
     
     
         8 . The apparatus of  claim 1 , wherein the baffle changes a temperature, pressure or other properties of the fluid while the fluid flows through the baffle. 
     
     
         9 . The apparatus of  claim 1 , wherein the baffle incorporates one or more heaters or coolers for the fluid. 
     
     
         10 . A method of growing one or more crystals, comprising:
 (a) placing source materials into a first zone of a vessel;   (b) placing seed crystals into a second zone of a vessel;   (c) filling the vessel with a solvent for dissolving the source materials in the first zone and transporting the dissolved source materials to the seed crystals in the second zone for growth of the crystals; and   (d) using at least one baffle positioned within the vessel and having a plurality of openings to control a flow of a fluid comprised of the solvent and the dissolved source materials therein between the first and second zones, wherein the openings in the baffle control motion patterns for the fluid through the baffle.   
     
     
         11 . The method of  claim 10 , wherein the source materials comprise group-III containing source materials, the seed crystals comprise group-III nitride seed crystals, the solvent comprises a nitrogen-containing solvent, and the crystals comprise group-III nitride crystals. 
     
     
         12 . The method of  claim 10 , wherein the baffle establishes a circular motion of the fluid within the vessel. 
     
     
         13 . The method of  claim 10 , wherein the fluid enters the baffle through one or more of the openings near an outer edge of the baffle and the fluid exits the baffle through one or more of the openings in a region that is closer to a center of the baffle. 
     
     
         14 . The method of  claim 10 , wherein the fluid enters the baffle through one or more of the openings in a region that is closer to a center of the baffle and the fluid exits the baffle through one or more of the openings closer nearer to an outer edge of the baffle. 
     
     
         15 . The method of  claim 10 , wherein the openings redirect the fluid through the baffle. 
     
     
         16 . The method of  claim 10 , wherein the baffle suppresses nucleation and growth on undesired locations or surfaces within the vessel, and enhances growth on desired locations or surfaces within the vessel. 
     
     
         17 . The method of  claim 10 , wherein the baffle changes a temperature, pressure or other properties of the fluid while the fluid flows through the baffle. 
     
     
         18 . The method of  claim 10 , wherein the baffle incorporates one or more heaters or coolers for the fluid.