Inventor · disambiguated record
Michael Lane
Also filed as: LANE MICHAEL · LANE MICHAEL W · LANE MICHAEL WAYNE
38 granted patents·12 pending applications·698 citations·filing 2002–2013
98Inventor score
Top patents by PatentIndex Score
50 records- 0198US7955955B2Using crack arrestor for inhibiting damage from dicing and chip packaging interaction failures in back end of line structuresIBM·Filed 2007·Granted Jun 7, 2011·70 cites·22 claims
- 0297US7276787B2Silicon chip carrier with conductive through-vias and method for fabricating sameIBM·Filed 2003·Granted Oct 2, 2007·124 cites·8 claims
- 0396US7479306B2SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the sameIBM·Filed 2005·Granted Jan 20, 2009·26 cites·1 claims
- 0495US7402532B2Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layerIBM·Filed 2006·Granted Jul 22, 2008·28 cites·1 claims
- 0594US8076756B2Structure for inhibiting back end of line damage from dicing and chip packaging interaction failuresLANE MICHAEL W·Filed 2011·Granted Dec 13, 2011·21 cites·20 claims
- 0691US8129286B2Reducing effective dielectric constant in semiconductor devicesEDELSTEIN DANIEL C·Filed 2008·Granted Mar 6, 2012·11 cites·32 claims
- 0791US7892940B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2007·Granted Feb 22, 2011·11 cites·25 claims
- 0891US7405147B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2004·Granted Jul 29, 2008·35 cites·31 claims
- 0989US8343868B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2011·Granted Jan 1, 2013·6 cites·20 claims
- 1089US8101236B2Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bondingEDELSTEIN DANIEL C·Filed 2009·Granted Jan 24, 2012·8 cites·24 claims
- 1188US7892648B2SiCOH dielectric material with improved toughness and improved Si-C bondingIBM·Filed 2005·Granted Feb 22, 2011·8 cites·13 claims
- 1288US7357977B2Ultralow dielectric constant layer with controlled biaxial stressIBM·Filed 2005·Granted Apr 15, 2008·10 cites·7 claims
- 1388US6974531B2Method for electroplating on resistive substratesIBM·Filed 2002·Granted Dec 13, 2005·20 cites·23 claims
- 1487US7592685B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2007·Granted Sep 22, 2009·7 cites·20 claims
- 1585US7109093B2Crackstop with release layer for crack control in semiconductorsIBM·Filed 2004·Granted Sep 19, 2006·32 cites·19 claims
- 1684US6958540B2Dual damascene interconnect structures having different materials for line and via conductorsIBM·Filed 2003·Granted Oct 25, 2005·29 cites·6 claims
- 1784US6764774B2Structures with improved adhesion to Si and C containing dielectrics and method for preparing the sameIBM·Filed 2002·Granted Jul 20, 2004·37 cites·63 claims
- 1882US7102232B2Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layerIBM·Filed 2004·Granted Sep 5, 2006·19 cites·13 claims
- 1982US6972209B2Stacked via-stud with improved reliability in copper metallurgyIBM·Filed 2002·Granted Dec 6, 2005·32 cites·8 claims
- 2082US6787912B2Barrier material for copper structuresIBM·Filed 2002·Granted Sep 7, 2004·27 cites·22 claims
- 2181US7084479B2Line level air gapsIBM·Filed 2003·Granted Aug 1, 2006·27 cites·15 claims
- 2280US7491578B1Method of forming crack trapping and arrest in thin film structuresIBM·Filed 2008·Granted Feb 17, 2009·8 cites·1 claims
- 2380US7119018B2Copper conductorIBM·Filed 2004·Granted Oct 10, 2006·20 cites·11 claims
- 2478US7517790B2Method and structure to enhance temperature/humidity/bias performance of semiconductor devices by surface modificationIBM·Filed 2005·Granted Apr 14, 2009·7 cites·16 claims
- 2577US7820559B2Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layerIBM·Filed 2008·Granted Oct 26, 2010·4 cites·19 claims
- 2676US7495338B2Metal capped copper interconnectIBM·Filed 2006·Granted Feb 24, 2009·4 cites·20 claims
- 2774US7573130B1Crack trapping and arrest in thin film structuresIBM·Filed 2009·Granted Aug 11, 2009·5 cites·1 claims
- 2874US7485582B2Hardmask for improved reliability of silicon based dielectricsIBM·Filed 2008·Granted Feb 3, 2009·5 cites·13 claims
- 2974US7335980B2Hardmask for reliability of silicon based dielectricsIBM·Filed 2004·Granted Feb 26, 2008·12 cites·13 claims
- 3073US6812143B2Process of forming copper structuresIBM·Filed 2002·Granted Nov 2, 2004·19 cites·15 claims
- 3172US8803318B2Semiconductor chips including passivation layer trench structureIBM·Filed 2013·Granted Aug 12, 2014·3 cites·6 claims
- 3270US7847402B2BEOL interconnect structures with improved resistance to stressIBM·Filed 2007·Granted Dec 7, 2010·4 cites·13 claims
- 3368US7300867B2Dual damascene interconnect structures having different materials for line and via conductorsIBM·Filed 2005·Granted Nov 27, 2007·3 cites·12 claims
- 3463US8440505B2Semiconductor chips including passivation layer trench structureKULKARNI DEEPAK·Filed 2010·Granted May 14, 2013·2 cites·6 claims
- 3563US2011101489A1SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAMEIBM·Filed 2011·Application pending·0 cites
- 3659US7825516B2Formation of aligned capped metal lines and interconnections in multilevel semiconductor structuresIBM·Filed 2002·Granted Nov 2, 2010·9 cites·1 claims
- 3759US7704876B2Dual damascene interconnect structures having different materials for line and via conductorsIBM·Filed 2007·Granted Apr 27, 2010·1 cites·13 claims
- 3859US2005199502A1Method for electroplating on resistive substratesIBM·Filed 2005·Application pending·0 cites
- 3958US2009304951A1Ultralow dielectric constant layer with controlled biaxial stressIBM·Filed 2009·Application pending·0 cites
- 4055US2008286494A1Ultralow dielectric constant layer with controlled biaxial stressIBM·Filed 2008·Application pending·0 cites
- 4155US2008118717A1Hardmask for improved reliability of silicon based dielectricsIBM·Filed 2008·Application pending·0 cites
- 4251US7214608B2Interlevel dielectric layer and metal layer sealingIBM·Filed 2004·Granted May 8, 2007·4 cites·20 claims
- 4350US2008079176A1Method and structure to enhance temperature/humidity/bias performance of semiconductor devices by surface modificationIBM·Filed 2007·Application pending·0 cites
- 4448US2006264036A1Line level air gapsIBM·Filed 2006·Application pending·0 cites
- 4547US7678673B2Strengthening of a structure by infiltrationIBM·Filed 2007·Granted Mar 16, 2010·0 cites·20 claims
- 4646US2006027934A1Silicon chip carrier with conductive through-vias and method for fabricating sameIBM·Filed 2005·Application pending·0 cites
- 4746US2006014376A1Stacked via-stud with improved reliability in copper metallurgyIBM·Filed 2005·Application pending·0 cites
- 4840US2007108638A1Alignment mark with improved resistance to dicing induced cracking and delamination in the scribe regionIBM·Filed 2005·Application pending·0 cites
- 4939US2006012014A1Reliability of low-k dielectric devices with energy dissipative layerIBM·Filed 2004·Application pending·0 cites
- 5037US2005118796A1Process for forming an electrically conductive interconnectFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →