SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME

Abstract

A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH 3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH 2 ] n — where n is greater than or equal to 1, HC═CH, C═CH 2 , C≡C or a [S] n linkage, where n is a defined above.

1 . An interconnect structure located on a substrate comprising at least one dielectric material comprising at least atoms of Si, C, O, H, and having a covalently bonded tri-dimensional network structure in which a fraction of the C atoms are bonded as Si—CH 3  functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH 2 ] n — where n is greater than or equal to 1, HC═CH, C═CH 2 , C≡C or a [S] n  linkage, where n is a defined above. 
     
     
         2 . The interconnect structure of  claim 1  wherein said dielectric material further comprises at least one of F, N, or Ge. 
     
     
         3 . The interconnect structure of  claim 1  wherein the fraction of the total carbon atoms in the material that is bonded as Si—R—Si is between 0.01 and 0.99. 
     
     
         4 . The interconnect structure of  claim 1  wherein said material is porous or dense has a cohesive strength greater than about 6 J/m 2  and a dielectric constant less than about 3.2. 
     
     
         5 . The interconnect structure of  claim 1  wherein said material is porous or dense and has a cohesive strength greater than about 3 J/m 2  and a dielectric constant less than about 2.5. 
     
     
         6 . The interconnect structure of  claim 1  wherein said material is dense or porous and has a cohesive strength greater than about 3 J/m 2  at a water pressure of 1570 Pa at 25° C. and a dielectric constant less than about 3.2. 
     
     
         7 . The interconnect structure of  claim 1  wherein said material is dense or porous and has a cohesive strength greater than about 2.1 J/m 2  at a water pressure of 1570 Pa at 25° C. and a dielectric constant less than about 2.5. 
     
     
         8 . The interconnect structure of  claim 1  wherein the material has a cohesive strength that lies in the shaded region of  FIG. 2A  or  2 B. 
     
     
         9 . An electronic structure containing at least two metallic conductor elements and an insulator dielectric wherein said dielectric is comprised of at least atoms Si, C, O, H and having a covalently bonded tri-dimensional network structure in which a fraction of the C atoms are bonded as Si—CH 3  functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH 2 ] n — where n is greater than or equal to 1, HC═CH, C═CH 2 , C≡C or a [S] n  linkage, where n is a defined above. 
     
     
         10 . The electronic structure of  claim 9  wherein the at least two metal conductor elements are patterned in a shape required for a function of a passive or active circuit element. 
     
     
         11 . The electronic structure of  claim 10  wherein said passive or active circuit element comprises one of an inductor, a resistor, a capacitor, or a resonator. 
     
     
         12 . An electronic sensing structure surrounded by a layer of insulator dielectric wherein said dielectric is comprised of at least atoms of Si, C, O, H and having a covalently bonded tri-dimensional network structure in which a fraction of the C atoms are bonded as Si—CH 3  functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH 2 ] n — where n is greater than or equal to 1, HC═CH, C═CH 2 , C≡C or a [S] n  linkage, where n is a defined above.