Inventor · disambiguated record
Marwan H. Khater
Also filed as: KHATER MARWAN · KHATER MARWAN H
110 granted patents·6 pending applications·1,764 citations·filing 1997–2019
99Inventor score
Top patents by PatentIndex Score
116 records- 0199US9324846B1Field plate in heterojunction bipolar transistor with improved break-down voltageIBM·Filed 2015·Granted Apr 26, 2016·522 cites·20 claims
- 0298US9887351B1Multivalent oxide cap for analog switching resistive memoryIBM·Filed 2016·Granted Feb 6, 2018·19 cites·20 claims
- 0398US9601546B1Scaled cross bar array with undercut electrodeIBM·Filed 2016·Granted Mar 21, 2017·26 cites·20 claims
- 0498US8288758B2SOI SiGe-base lateral bipolar junction transistorNING TAK H·Filed 2010·Granted Oct 16, 2012·59 cites·13 claims
- 0597US9274283B1Silicon photonics alignment tolerant vertical grating couplersIBM·Filed 2014·Granted Mar 1, 2016·51 cites·25 claims
- 0697US8420493B2SOI SiGe-base lateral bipolar junction transistorNING TAK H·Filed 2012·Granted Apr 16, 2013·40 cites·20 claims
- 0796US10096773B1Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodesIBM·Filed 2017·Granted Oct 9, 2018·12 cites·1 claims
- 0896US9368608B1Heterojunction bipolar transistor with improved performance and breakdown voltageGLOBALFOUNDARIES INC·Filed 2015·Granted Jun 14, 2016·26 cites·20 claims
- 0996US9368653B1Silicon photonics integration method and structureIBM·Filed 2014·Granted Jun 14, 2016·15 cites·25 claims
- 1095US10141509B2Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodesIBM·Filed 2017·Granted Nov 27, 2018·10 cites·9 claims
- 1195US9466753B1Photodetector methods and photodetector structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 11, 2016·8 cites·14 claims
- 1295US9245951B1Profile control over a collector of a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 26, 2016·20 cites·20 claims
- 1395US8765536B2Stress engineered multi-layers for integration of CMOS and Si nanophotonicsIBM·Filed 2012·Granted Jul 1, 2014·14 cites·18 claims
- 1495US7947589B2FinFET formation with a thermal oxide spacer hard mask formed from crystalline silicon layerFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted May 24, 2011·28 cites·20 claims
- 1594US6459066B1Transmission line based inductively coupled plasma source with stable impedanceUNIV TEXAS·Filed 2001·Granted Oct 1, 2002·58 cites·44 claims
- 1693US9755087B2Silicon photonics integration method and structureIBM·Filed 2016·Granted Sep 5, 2017·6 cites·20 claims
- 1793US9722057B2Bipolar junction transistors with a buried dielectric region in the active device regionGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 1, 2017·9 cites·20 claims
- 1892US9159817B2Heterojunction bipolar transistors with an airgap between the extrinsic base and collectorIBM·Filed 2013·Granted Oct 13, 2015·14 cites·20 claims
- 1992US8536012B2Bipolar junction transistors with a link region connecting the intrinsic and extrinsic basesCAMILLO-CASTILLO RENATA·Filed 2011·Granted Sep 17, 2013·13 cites·15 claims
- 2092US7119416B1Bipolar transistor structure with self-aligned raised extrinsic base and methodsIBM·Filed 2005·Granted Oct 10, 2006·21 cites·6 claims
- 2192US6940149B1Structure and method of forming a bipolar transistor having a void between emitter and extrinsic baseIBM·Filed 2004·Granted Sep 6, 2005·64 cites·20 claims
- 2291US9997704B2Scaled cross bar array with undercut electrodeIBM·Filed 2017·Granted Jun 12, 2018·6 cites·20 claims
- 2390US7888745B2Bipolar transistor with dual shallow trench isolation and low base resistanceIBM·Filed 2006·Granted Feb 15, 2011·21 cites·22 claims
- 2490US7144787B2Methods to improve the SiGe heterojunction bipolar device performanceIBM·Filed 2005·Granted Dec 5, 2006·16 cites·17 claims
- 2589US10026852B2Silicon photonics integration method and structureIBM·Filed 2017·Granted Jul 17, 2018·3 cites·11 claims
- 2689US9240448B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2015·Granted Jan 19, 2016·5 cites·9 claims
- 2789US6028285AHigh density plasma source for semiconductor processingUNIV TEXAS·Filed 1997·Granted Feb 22, 2000·79 cites·39 claims
- 2888US9318551B2Trench isolation structures and methods for bipolar junction transistorsGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 19, 2016·7 cites·13 claims
- 2988US8923665B2Material structures for front-end of the line integration of optical polarization splitters and rotatorsIBM·Filed 2013·Granted Dec 30, 2014·7 cites·16 claims
- 3088US8772902B2Fabrication of a localized thick box with planar oxide/SOI interface on bulk silicon substrate for silicon photonics integrationASSEFA SOLOMON·Filed 2012·Granted Jul 8, 2014·10 cites·12 claims
- 3188US7253096B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2005·Granted Aug 7, 2007·11 cites·7 claims
- 3287US9070734B2Heterojunction bipolar transistors with reduced parasitic capacitanceIBM·Filed 2014·Granted Jun 30, 2015·7 cites·11 claims
- 3386US10012798B2Sacrificial coupler for testing V-grooved integrated circuitsIBM·Filed 2016·Granted Jul 3, 2018·4 cites·24 claims
- 3486US9093491B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2012·Granted Jul 28, 2015·7 cites·13 claims
- 3586US7462547B2Method of fabricating a bipolar transistor having reduced collector-base capacitanceIBM·Filed 2006·Granted Dec 9, 2008·12 cites·16 claims
- 3686US6972443B2Structure and method of forming a bipolar transistor having a self-aligned raised extrinsic base using link-up region formed from an opening thereinIBM·Filed 2004·Granted Dec 6, 2005·38 cites·9 claims
- 3786US6864560B2Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitanceIBM·Filed 2003·Granted Mar 8, 2005·41 cites·20 claims
- 3885US9087952B2Stress engineered multi-layers for integration of CMOS and Si nanophotonicsIBM·Filed 2014·Granted Jul 21, 2015·3 cites·13 claims
- 3984US8810005B1Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up regionIBM·Filed 2013·Granted Aug 19, 2014·7 cites·12 claims
- 4084US7615457B2Method of fabricating self-aligned bipolar transistor having tapered collectorIBM·Filed 2008·Granted Nov 10, 2009·9 cites·8 claims
- 4184US7170083B2Bipolar transistor with collector having an epitaxial Si:C regionIBM·Filed 2005·Granted Jan 30, 2007·9 cites·7 claims
- 4284US7102205B2Bipolar transistor with extrinsic stress layerIBM·Filed 2004·Granted Sep 5, 2006·32 cites·6 claims
- 4384US7087940B2Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layerIBM·Filed 2004·Granted Aug 8, 2006·31 cites·20 claims
- 4483US8716837B2Bipolar junction transistors with a link region connecting the intrinsic and extrinsic basesIBM·Filed 2013·Granted May 6, 2014·5 cites·20 claims
- 4583US8106456B2SOI transistors having an embedded extension region to improve extension resistance and channel strain characteristicsKHATER MARWAN H·Filed 2009·Granted Jan 31, 2012·10 cites·21 claims
- 4683US7476914B2Methods to improve the SiGe heterojunction bipolar device performanceIBM·Filed 2006·Granted Jan 13, 2009·8 cites·7 claims
- 4783US6979884B2Bipolar transistor having self-aligned silicide and a self-aligned emitter contact borderIBM·Filed 2003·Granted Dec 27, 2005·27 cites·10 claims
- 4883US6676800B1Particle contamination cleaning from substrates using plasmas, reactive gases, and mechanical agitationAPPLIED MATERIALS INC·Filed 2000·Granted Jan 13, 2004·38 cites·37 claims
- 4982US9653566B2Bipolar junction transistors with an air gap in the shallow trench isolationGLOBALFOUNDRIES INC·Filed 2015·Granted May 16, 2017·3 cites·19 claims
- 5082US8525264B1Photonic modulator with a semiconductor contactASSEFA SOLOMON·Filed 2012·Granted Sep 3, 2013·5 cites·20 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →