Inventor · disambiguated record
Roy A. Carruthers
Also filed as: CARRUTHERS ROY · CARRUTHERS ROY A · CARRUTHERS ROY ARTHUR
36 granted patents·10 pending applications·1,282 citations·filing 1992–2012
98Inventor score
Top patents by PatentIndex Score
46 records- 0197US8119466B2Self-aligned process for nanotube/nanowire FETsAVOURIS PHAEDON·Filed 2011·Granted Feb 21, 2012·515 cites·20 claims
- 0295US6815329B2Multilayer interconnect structure containing air gaps and method for makingIBM·Filed 2002·Granted Nov 9, 2004·105 cites·13 claims
- 0394US7247946B2On-chip Cu interconnection using 1 to 5 nm thick metal capIBM·Filed 2005·Granted Jul 24, 2007·35 cites·14 claims
- 0494US6503833B1Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed therebyIBM·Filed 2000·Granted Jan 7, 2003·83 cites·35 claims
- 0593US7598516B2Self-aligned process for nanotube/nanowire FETsIBM·Filed 2005·Granted Oct 6, 2009·24 cites·15 claims
- 0692US8927057B2Graphene formation utilizing solid phase carbon sourcesBOL AGEETH A·Filed 2010·Granted Jan 6, 2015·14 cites·13 claims
- 0790US6323130B1Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridgingIBM·Filed 2000·Granted Nov 27, 2001·59 cites·16 claims
- 0889US6444578B1Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devicesIBM·Filed 2001·Granted Sep 3, 2002·50 cites·50 claims
- 0988US7098476B2Multilayer interconnect structure containing air gaps and method for makingIBM·Filed 2004·Granted Aug 29, 2006·39 cites·4 claims
- 1088US6440851B1Method and structure for controlling the interface roughness of cobalt disilicideIBM·Filed 1999·Granted Aug 27, 2002·57 cites·24 claims
- 1187US8003453B2Self-aligned process for nanotube/nanowire FETsIBM·Filed 2008·Granted Aug 23, 2011·11 cites·14 claims
- 1282US7517795B2Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidationIBM·Filed 2006·Granted Apr 14, 2009·9 cites·1 claims
- 1381US6413859B1Method and structure for retarding high temperature agglomeration of silicides using alloysIBM·Filed 2000·Granted Jul 2, 2002·26 cites·3 claims
- 1480US7271486B2Retarding agglomeration of Ni monosilicide using Ni alloysIBM·Filed 2005·Granted Sep 18, 2007·7 cites·17 claims
- 1580US6331486B1Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloyIBM·Filed 2000·Granted Dec 18, 2001·21 cites·22 claims
- 1676US7449782B2Self-aligned metal to form contacts to Ge containing substrates and structure formed therebyIBM·Filed 2004·Granted Nov 11, 2008·16 cites·10 claims
- 1775US7384868B2Reduction of silicide formation temperature on SiGe containing substratesIBM·Filed 2003·Granted Jun 10, 2008·18 cites·18 claims
- 1874US6972250B2Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe deviceIBM·Filed 2003·Granted Dec 6, 2005·16 cites·18 claims
- 1974US6690072B2Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned COSI2 on raised source drain Si/SiGe deviceIBM·Filed 2002·Granted Feb 10, 2004·16 cites·3 claims
- 2073US6753606B2Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloyIBM·Filed 2001·Granted Jun 22, 2004·13 cites·11 claims
- 2171US7119012B2Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidationIBM·Filed 2004·Granted Oct 10, 2006·14 cites·17 claims
- 2271US6188120B1Method and materials for through-mask electroplating and selective base removalIBM·Filed 1997·Granted Feb 13, 2001·32 cites·17 claims
- 2369US5340775AStructure and fabrication of SiCr microfusesIBM·Filed 1993·Granted Aug 23, 1994·40 cites·12 claims
- 2467US6417567B1Flat interface for a metal-silicon contract barrier filmIBM·Filed 2000·Granted Jul 9, 2002·8 cites·20 claims
- 2567US6391773B2Method and materials for through-mask electroplating and selective base removalIBM·Filed 2000·Granted May 21, 2002·9 cites·30 claims
- 2666US6905560B2Retarding agglomeration of Ni monosilicide using Ni alloysIBM·Filed 2002·Granted Jun 14, 2005·10 cites·33 claims
- 2760US7784669B2Method and process for reducing undercooling in a lead-free tin-rich solder alloyIBM·Filed 2009·Granted Aug 31, 2010·1 cites·11 claims
- 2859US7703661B2Method and process for reducing undercooling in a lead-free tin-rich solder alloyIBM·Filed 2007·Granted Apr 27, 2010·1 cites·22 claims
- 2959US7682968B2Self-aligned metal to form contacts to Ge containing substrates and structure formed therebyIBM·Filed 2008·Granted Mar 23, 2010·1 cites·20 claims
- 3056US7081676B2Structure for controlling the interface roughness of cobalt disilicideIBM·Filed 2003·Granted Jul 25, 2006·5 cites·8 claims
- 3153US8154130B2Self-aligned metal to form contacts to Ge containing substrates and structure formed therebyCABRAL JR CYRIL·Filed 2008·Granted Apr 10, 2012·0 cites·8 claims
- 3253US6503641B2Interconnects with Ti-containing linersIBM·Filed 2000·Granted Jan 7, 2003·5 cites·13 claims
- 3351US8125082B2Reduction of silicide formation temperature on SiGe containing substratesCABRAL JR CYRIL·Filed 2008·Granted Feb 28, 2012·0 cites·7 claims
- 3451US7102234B2Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloyIBM·Filed 2004·Granted Sep 5, 2006·3 cites·7 claims
- 3551US2008026534A1SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETsIBM·Filed 2007·Application pending·0 cites
- 3650US5285099ASiCr microfusesIBM·Filed 1992·Granted Feb 8, 1994·17 cites·4 claims
- 3748US2008299720A1STABILIZATION OF Ni MONOSILICIDE THIN FILMS IN CMOS DEVICES USING IMPLANTATION OF IONS BEFORE SILICIDATIONIBM·Filed 2008·Application pending·0 cites
- 3847US6809030B2Method and structure for controlling the interface roughness of cobalt disilicideIBM·Filed 2002·Granted Oct 26, 2004·2 cites·9 claims
- 3943US2013049200A1Silicidation of device contacts using pre-amorphization implant of semiconductor substrateBESSER PAUL R·Filed 2012·Application pending·0 cites
- 4042US2005250318A1CVD tantalum compounds for FET gate electrodesNARAYANAN VIJAY·Filed 2005·Application pending·0 cites
- 4141US2013049199A1Silicidation of device contacts using pre-amorphization implant of semiconductor substrateBESSER PAUL R·Filed 2011·Application pending·0 cites
- 4237US2002151158A1Method and structure for retarding high temperature agglomeration of silicides using alloysIBM·Filed 2002·Application pending·0 cites
- 4337US2011162702A1Quasi-pyramidal textured surfaces using phase-segregated masksIBM·Filed 2010·Application pending·0 cites
- 4437US2003068883A1Self-aligned silicide (salicide) process for strained silicon MOSFET on SiGe and structure formed therebyIBM·Filed 2002·Application pending·0 cites
- 4537US2004077140A1Apparatus and method for forming uniformly thick anodized films on large substratesFiled 2002·Application pending·0 cites
- 4636US2005104142A1CVD tantalum compounds for FET get electrodesFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →