Inventor · disambiguated record
Po-Kai Hsiao
Also filed as: Hsiao Po-Kai
6 granted patents·7 pending applications·5 citations·filing 2016–2025
72Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13
Top patents by PatentIndex Score
13 records- 0192US12094757B2Method for manufacturing semiconductor device with semiconductor capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·1 cites·20 claims
- 0287US11688625B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 0384US2025329576A1Depositing and oxidizing silicon liner for forming isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0478US2025357188A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0577US9893185B2Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·3 cites·17 claims
- 0677US2024274465A1Depositing and Oxidizing Silicon Liner for Forming Isolation RegionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0775US2025344464A1Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0875US2024387274A1Interface trap charge density reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0970US2023326802A1Interface trap charge density reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1069US11996317B2Methods for forming isolation regions by depositing and oxidizing a silicon linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·0 cites·20 claims
- 1168US12400910B2Method for forming semiconductor device with monoclinic crystalline metal oxide capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 1265US11670551B2Interface trap charge density reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 1360US2023378261A1Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →